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    P2103H Search Results

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    P2103H Price and Stock

    Niko Semicondutor Co Ltd P2103HVG

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    Bristol Electronics P2103HVG 3,903
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    NIKO-SEM P2103HVG

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    ComSIT USA P2103HVG 1,452
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    P2103H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2103HVG Niko Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    P2103HVG Niko Semiconductor Dual N-Channel Enhancement FET Original PDF

    P2103H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P2103HVG

    Abstract: 21m7a transistor j 127 niko-sem
    Text: NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 21mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P2103HVG Jun-29-2004 P2103HVG 21m7a transistor j 127 niko-sem

    bwd R3076

    Abstract: rk7002b MDB35 transformer 27M20 c639 ph S43 sot223 AD5815 ATMEL256 medion ICS952013
    Text: 5 MSI 4 3 2 1 MS-1002 Ver:0C DTR MS-1002 System Block Diagram D D DT CPU PRESCOTT PG.2~3 TV C PG.26 FSB800 16M 16M ATi M10 P/C 16M 16M 16M 16M SIS648FX AGP 8X/66Mz PG.32~35 MiniPCI 802.11b PG.13 PG.5~7 BORADCOM GIGA LAN MMC/SM/SD/MS B PG.11~12 C AC LINK UDMA 133


    Original     		PDF MS-1002 400MHz/533MHz/800MHz. FSB800 DDR400/DDR333/DDR266 8X/66Mz SIS648FX 400MHz MuTIOL/133Mz PCI/33MHz bwd R3076 rk7002b MDB35 transformer 27M20 c639 ph S43 sot223 AD5815 ATMEL256 medion ICS952013

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34810AA-N •General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V)


    Original     		PDF ELM34810AA-N ELM34810AA-N P2103HVG Jun-29-2004

    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー N チャンネル MOSFET ELM34810AA-N •概要 ■特長 ELM34810AA-N は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=30V ・ Id=7A MOSFET です。 ・ Rds on < 21mΩ (Vgs=10V)


    Original     		PDF ELM34810AA-N P2103HVG Jun-29-2004

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    ELM34810AA

    Abstract: No abstract text available
    Text: 双 N 沟道 MOSFET ELM34810AA-N •概要 ■特点 ELM34810AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=7A ·Rds on < 21mΩ (Vgs=10V) ·Rds(on) < 35mΩ (Vgs=4.5V) ■绝对最大额定值


    Original     		PDF ELM34810AA-N P2103HVG Jun-29-2004 ELM34810AA

    Untitled

    Abstract: No abstract text available
    Text: Dual N-channel MOSFET ELM34810AA-N •General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V)


    Original     		PDF ELM34810AA-N ELM34810AA-N P2103HVG Jun-29-2004