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Niko Semicondutor Co Ltd P2103HVG
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Bristol Electronics	P2103HVG		3,903			1 - 10 - 100 - 1000 - 10000 -	Get Quote
NIKO-SEM P2103HVG Electronic Component
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ComSIT Distribution	P2103HVG		1,452			1 - 10 - 100 - 1000 - 10000 -	Get Quote

P2103HVG Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P2103HVG		Niko Semiconductor	Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF
P2103HVG		Niko Semiconductor	Dual N-Channel Enhancement FET		Original	PDF

P2103HVG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P2103HVG Abstract: 21m7a transistor j 127 niko-sem Text: NIKO-SEM P2103HVG Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 21mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	P2103HVG Jun-29-2004 P2103HVG 21m7a transistor j 127 niko-sem	PDF
Untitled Abstract: No abstract text available Text: Dual N-channel MOSFET ELM34810AA-N •General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V)	Original	ELM34810AA-N ELM34810AA-N P2103HVG Jun-29-2004	PDF
Untitled Abstract: No abstract text available Text: デュアルパワー N チャンネル MOSFET ELM34810AA-N •概要 ■特長 ELM34810AA-N は低入力容量低電圧駆動、低オン抵抗という特性を備えた大電流デュアルパワー・ Vds=30V ・ Id=7A MOSFET です。・ Rds on < 21mΩ (Vgs=10V)	Original	ELM34810AA-N P2103HVG Jun-29-2004	PDF
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G	PDF
ELM34810AA Abstract: No abstract text available Text: 双 N 沟道 MOSFET ELM34810AA-N •概要 ■特点 ELM34810AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=7A ·Rds on < 21mΩ (Vgs=10V) ·Rds(on) < 35mΩ (Vgs=4.5V) ■绝对最大额定值	Original	ELM34810AA-N P2103HVG Jun-29-2004 ELM34810AA	PDF
Untitled Abstract: No abstract text available Text: Dual N-channel MOSFET ELM34810AA-N •General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V)	Original	ELM34810AA-N ELM34810AA-N P2103HVG Jun-29-2004	PDF