P2504BDG Search Results

P2504BDG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
P2504BDG		Niko Semiconductor	N-Channel Logic Level Enhancement FET		Original	PDF

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Catalog Datasheet	MFG & Type	PDF	Document Tags
p2504bdg Abstract: nikos p2504 sem 2005 nikos transistor niko-sem dpak code P2504BD Text: NIKO-SEM N-Channel Logic Level Enhancement P2504BDG Mode Field Effect Transistor Preliminary TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	PDF	P2504BDG O-252 JAN-17-2005 p2504bdg nikos p2504 sem 2005 nikos transistor niko-sem dpak code P2504BD
P2504BDG Abstract: No abstract text available Text: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)	Original	PDF	ELM32412LA-S ELM32412LA-S P2504BDG O-252 JAN-17-2005 P2504BDG
P70N02LDG Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG	Original	PDF	O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM32412LA-S •概要 ■特長 ELM32412LA-S は低入力容量低電圧駆動、低・ Vds=40V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=12A ・ Rds on < 25mΩ (Vgs=10V) ・ Rds(on) < 45mΩ (Vgs=4.5V)	Original	PDF	ELM32412LA-S P2504BDG O-252 JAN-17-2005
ELM32412LA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM32412LA-S •概要 ■特点 ELM32412LA-S 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=12A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 45mΩ (Vgs=4.5V) ■绝对最大额定值项目	Original	PDF	ELM32412LA-S O-252 JAN-17-2005 P2504BDG ELM32412LA
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)	Original	PDF	ELM32412LA-S ELM32412LA-S P2504BDG O-252 JAN-17-2005