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    P4N60 Search Results

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    P4N60 Price and Stock

    onsemi FCP4N60

    MOSFET N-CH 600V 3.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCP4N60 Tube 177 1
    • 1 $2.49
    • 10 $2.49
    • 100 $2.49
    • 1000 $2.49
    • 10000 $2.49
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    Newark FCP4N60 Bulk 30 1
    • 1 $0.241
    • 10 $0.241
    • 100 $0.241
    • 1000 $0.241
    • 10000 $0.241
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    Rochester Electronics FCP4N60 6,909 1
    • 1 $1.08
    • 10 $1.08
    • 100 $1.02
    • 1000 $0.918
    • 10000 $0.918
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    onsemi FQP4N60

    MOSFET N-CH 600V 4.4A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQP4N60 Tube
    • 1 -
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    Rochester Electronics LLC FCP4N60

    POWER FIELD-EFFECT TRANSISTOR, 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCP4N60 Bulk 268
    • 1 -
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    • 1000 $1.12
    • 10000 $1.12
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    Rochester Electronics LLC MGP4N60E

    IGBT, 6A, 600V, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGP4N60E Bulk 503
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    • 1000 $0.6
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    Rochester Electronics LLC MGP4N60ED

    IGBT, 6A, 600V, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGP4N60ED Bulk 683
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    • 1000 $0.44
    • 10000 $0.44
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    P4N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P4N60

    Abstract: F4N60
    Text: P4N60 / PJF4N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 4A , 600V, RDS ON =2.4Ω@VGS=10V, ID=2.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original
    PDF PJP4N60 PJF4N60 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 P4N60 F4N60

    P4N60

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P4N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet P4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C


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    PDF P4N60ED/D MGP4N60ED P4N60

    P4N60

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


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    PDF MGP4N60ED P4N60

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E