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    PA TRANSISTOR SMD Search Results

    PA TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PA TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k 3918 TRANSISTOR

    Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
    Text: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver


    Original     		PDF 800MHz BFG21W JL-9803v2 BFG21W, BFG21W 800MHz, 25dBm, k 3918 TRANSISTOR pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ PMBT3904 09 18 140 9622

    Decoupling capacitor philips

    Abstract: 4066 spice model BFG480W 4405 smd ATC100A BFG80W PMBT3904 BFG-80 bfg8
    Text: Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications


    Original     		PDF BFG480W JL-9902v0 BFG480W, BFG80W 20dBm, BFG480W Decoupling capacitor philips 4066 spice model 4405 smd ATC100A PMBT3904 BFG-80 bfg8

    atc100a

    Abstract: JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 TDMA POWER 5509
    Text: Philips Semiconductors 1880 MHz PA Driver with BFG21W 1880 MHz PA Driver with BFG21W Application Note JL-9901v0 Author Jarek Lucek April 9, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in


    Original     		PDF BFG21W JL-9901v0 BFG21W, BFG21W 24dBm, 7E-12 99E-13 atc100a JL 1500 3.6v 9901v Philips capacitor 116 RF NPN POWER TRANSISTOR C 10-12 GHZ PMBT3904 TDMA POWER 5509

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003PY OT669 LFPAK56) PHPT61003NY AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC


    Original     		PDF PHPT61002NYC OT669 LFPAK56) PHPT61002PYC

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original     		PDF PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003NY OT669 LFPAK56) AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.


    Original     		PDF PHPT61002PYC OT669 LFPAK56) PHPT61002NYC.

    smd transistor marking PA

    Abstract: smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd
    Text: Transistors IC SMD Type NPN Epitaxial Silicon Transistor 2SC3663 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz 0.55 Low-voltage, low-current, low-noise and high-gain


    Original     		PDF 2SC3663 OT-23 smd transistor marking PA smd transistor marking GA smd marking GA 2SC3663 MARKING Pa TRANSISTOR PA transistor smd

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Nordmende

    Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
    Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    smd diode K7

    Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
    Text: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter


    OCR Scan     		PDF 2SA1795 2SA1796 2SC4668 2SC4669 D1FL40 D2FL40 DE3L40 DE5LC40 D1FL20U D2FL20U smd diode K7 TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f

    Untitled

    Abstract: No abstract text available
    Text: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF bh53131 00E3T77 BST120

    BST122

    Abstract: No abstract text available
    Text: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.


    OCR Scan     		PDF BST122 hhS3131 BST122

    Untitled

    Abstract: No abstract text available
    Text: PMBT5088 _/ v_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small signal transistor in plastic SOT-23 package intended fo r low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA Collector-emitter voltage open base


    OCR Scan     		PDF PMBT5088 OT-23 OT-23.

    TRANSISTOR SMD MARKING CODE JSs

    Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with


    OCR Scan     		PDF PMBF170 TRANSISTOR SMD MARKING CODE JSs smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA

    transistor SMD Lf

    Abstract: LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors
    Text: Switching Diode SMD SOT-23 Plastic Use Advantages T3 S Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		PDF OT-23 transistor SMD Lf LF transistor smd SOT-23 lF smd transistor SMD Transistor LF BKC Semiconductors

    transistor tt 2222

    Abstract: smd 809 x transistor transistor SMD S33
    Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		PDF 0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor
    Text: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.


    OCR Scan     		PDF bbS3T31 0DE470fl BF824 OT-23 bb53131 0DEM711 7Z72155 7Z72159 D024712 transistor SMD MARKING CODE HF smd code HF transistor

    Untitled

    Abstract: No abstract text available
    Text: PZT3904 _ / SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA


    OCR Scan     		PDF PZT3904 OT-223)