Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm
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PA1710A
PA1710AG
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm
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PA1710A
PA1710AG
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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pa1476h
Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Text: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674
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X13769XJ2V0CD00
2SA1206*
2SC1674
2SA988
2SA992
2SC1841
2SC1845
2SA733
2SA990
2SC945
pa1476h
pa80c
PA1501H
pa1437h
PA1478H
PA1556A
pa1428ah
PA2981
PA571T
PA1556AH
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PC1310
Abstract: No abstract text available
Text: TMP82C265BF-2 1/3 IL00 * C-MOS PROGRAMMABLE PERIPHERAL INTERFACE 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 VCC (+5V) 64 63
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TMP82C265BF-2
PC0-PC17
PC13-10
PB17-10
PC17-14
PA17-10
PC03-00
PB07-00
PC07-04
PC1310
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Untitled
Abstract: No abstract text available
Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ß PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel M O S Field Effect Transistor designed for D C /D C converter and power m anagem ent applications of notebook computers.
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PA1710A
PA1710AG
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Untitled
Abstract: No abstract text available
Text: THIS C D R A WI N G IS RELEASED UNPUBLISHED. C O P Y R I G H T 19 9 9 2 7 8 BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS 19 99 LOC REV IS I O N S D I ST AD 0 0 RESERVED. LTR 09FEB0I REV P E R O G 3 C - 044 I -00 9 54 [ 00 ] DWN DATE DE S C R I P T I O N
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APR99
APR99
A17105-3608
MAR200Ü
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103-6527
Abstract: 103650-7
Text: AMP SOE INCORPORATE» D DT^BIE /$ 001fifib3 4 • D im ension ing: Dimensions are in inches and millimeters. Values in brackets are metric equivalents. Chart contains dimensions in inches over millimeters. Dimensions are for reference purposes only. Individual Assemblies
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D01fiÃ
103651-rplated
103-6527
103650-7
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TXAL 228 B
Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Text: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X
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/PA17Q2
PA1710
TXAL 228 B
2SAB12
K1589
2sc2554
k2499
P015M
2SD 1694
2482S
K2134
diode zener nt 1243
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS Field Effect Power Transistors AiPA1 710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channei MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management
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980pF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS Field Effect Power Transistors fiPMHO SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This p roduct is P -C h annel M O S Field Effect Transistor in m ilfim eter} designed for DC /D C conve rter and pow er m anagem ent
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980pF
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822275-1
Abstract: No abstract text available
Text: Iloc ie.»t j AG ] 5 3 l 8 A\ H O U S IN G M A T E R IA L S H ALL BE P O LY P H E N Y L E N E /$ \ C ONTACT M A T E R IA L SH ALL BE PHOS. & C ONTACT F IN IS H , PLATE 0 ,0 0 5 0 8 IN D IC A T E S P .'N *1 AND 15 C. 0 0 C 2 0 0 ) LO C A T E D AP P R O X .
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HEVIS10HS
822275-1
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transistor d 1710
Abstract: A1710
Text: DATA SHEET MOS Field Effect Power Transistors PA1710 SWITCHING P-CHANNEL POWER MOS F FT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect T ransistor in m illim eter designed for DC/DC converter and pow er m anagem ent
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uPA1710
980pF
transistor d 1710
A1710
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Untitled
Abstract: No abstract text available
Text: Data Sheet 124062 AMP PCMCIA Flash-5C Memory Card AUG 94 REVO Product Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PCMCIA Release 2.1 Compatible Thin Profile — Type I Package, 3.3 mm Thick Standard Memory Capacities include 1 MB, 2 MB, 4 MB, and 8 MB
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