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    PACKAGE TSOP1 28 Search Results

    PACKAGE TSOP1 28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGE TSOP1 28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6X1008T2D-GF70

    Abstract: K6X1008T2D-TB551 K6X1008T2D-TF70 GF551 TF85 K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70
    Text: Preliminary CMOS SRAM K6X1008T2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.


    Original     		PDF K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 0820F) K6X1008T2D-GF70 K6X1008T2D-TB551 K6X1008T2D-TF70 GF551 TF85 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70

    K6X1008T2D-BF852

    Abstract: samsung 822 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q K6X1008T2D 32-SOP
    Text: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.


    Original     		PDF K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008T2D-BF852 samsung 822 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q 32-SOP

    K6X1008

    Abstract: K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70
    Text: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.


    Original     		PDF K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70

    K6X1008C2D-GF55

    Abstract: k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 K6X1008C2D
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		PDF K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF55 k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70

    K6X1008C2D-GF70

    Abstract: K6X1008C2D-PQ701 55ns K6X1008C2D K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		PDF K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF70 K6X1008C2D-PQ701 55ns K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q

    K6X1008C2D-GF55

    Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
    Text: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		PDF K6X1008C2D 128Kx8 32-TSOP1-0820R 0820F) K6X1008C2D-GF55 K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70

    K6F1008V2C

    Abstract: K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70
    Text: K6F1008V2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial Draft November 27, 2001 Preliminary 0.1 Revise - Changed Package Type : 48 36 -TBGA-6.00x7.00 to 32-TSOP1-0813.4F


    Original     		PDF K6F1008V2C 128Kx8 32-TSOP1-0813 K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K6F1008V2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial Draft November 27, 2001 Preliminary 0.1 Revise - Changed Package Type : 48 36 -TBGA-6.00x7.00 to 32-TSOP1-0813.4F


    Original     		PDF K6F1008V2C 128Kx8 32-TSOP1-0813

    K6F1008V2C-LF55

    Abstract: K6F1008V2C-LF70 K6F1008V2C K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70 32-STSOP1
    Text: K6F1008V2C Family CMOS SRAM Document Title 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft November 27, 2001 Preliminary 0.1 Revise - Changed Package Type : 48 36 -TBGA-6.00x7.00 to 32-TSOP1-0813.4F


    Original     		PDF K6F1008V2C 128Kx8 32-TSOP1-0813 K6F1008V2C-LF55 K6F1008V2C-LF70 K6F1008V2C-F K6F1008V2C-YF55 K6F1008V2C-YF70 32-STSOP1

    32K x 8 HIGH SPEED CMOS STATIC RAM

    Abstract: IC61LV256-12JG
    Text: IC61LV256 Document Title 32K x 8 Hight Speed SRAM with 3.3V Revision History Revision No History Draft Date 0A 0B Initial Draft Add Pb-free parts April 19,2002 November 28,2003 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC61LV256 AHSR027-0B m61LV256-10TIG IC61LV256-10JIG 300mil IC61LV256-12TG IC61LV256-12JG IC61LV256-12TIG 32K x 8 HIGH SPEED CMOS STATIC RAM IC61LV256-12JG

    IC61C1024-15J

    Abstract: IC61C1024 IC61C1024-12H IC61C1024-12J IC61C1024-12K IC61C1024-12T IC61C1024L
    Text: IC61C1024 IC61C1024L Document Title 128K x 8 High-Speed SRAM Revision History Revision No History Draft Date 0A 0B Initial Draft Revise typo on page 6 and page 8 March 13,2001 October 18,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC61C1024 IC61C1024L AHSR008-0B t024L-12HI IC61C1024L-20TI 300mil 400mil IC61C1024L-25J IC61C1024-15J IC61C1024 IC61C1024-12H IC61C1024-12J IC61C1024-12K IC61C1024-12T IC61C1024L

    ic62lv2568ll-70t

    Abstract: 55ti IC62LV2568LL TSOP 86 Package IC62LV2568LL-55H
    Text: IC62LV2568L IC62LV2568LL IC62LV2568L IC62LV2568LL 256K x 8 LOW POWER and LOW V+ CMOS STATIC RAM FEATURES • Access times of 55, 70, 100 ns • Low active power: 126 mW max, L, LL • Low standby power: 36 µW (max, L) and 7.2 µW (max, LL) CMOS standby • Low data retention voltage: 1.5V (min.)


    Original     		PDF IC62LV2568L IC62LV2568LL 32-pin 8x20mm 32-pin 48-pin IC62LV2568L IC62LV2568LL ic62lv2568ll-70t 55ti TSOP 86 Package IC62LV2568LL-55H

    tsop I 8mm x 13.4mm

    Abstract: No abstract text available
    Text: IC62LV5128L IC62LV5128LL Document Title 512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No History Draft Date Remark 0A Initial Draft May 1,2001 Preliminary 0B 1. Change for tPWE: 45 to 40 ns for 55 ns product August 31,2001


    Original     		PDF IC62LV5128L IC62LV5128LL 512Kx8 IC62LV5128LL-70TI IC62LV5128LL-70HI IC62LV5128LL-70BI IC62LV5128LL-100T IC62LV5128LL-100H IC62LV5128LL-100B IC62LV5128LL-100TI tsop I 8mm x 13.4mm

    IS62LV1024L

    Abstract: IS62LV1024LL LPSR018-0D IS62LV1024LL-70T TSOP-16
    Text: IS62LV1024L IS62LV1024L/LL IS62LV1024LL 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 45, 55, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)


    Original     		PDF IS62LV1024L IS62LV1024L/LL IS62LV1024LL IS62LV1024L IS62LV1024LL 072-word 450mil IS62LV1024LL-70Q IS62LV1024LL-70T IS62LV1024LL-70H LPSR018-0D IS62LV1024LL-70T TSOP-16

    Untitled

    Abstract: No abstract text available
    Text: IS62LV2568L IS62LV2568LL IS62LV2568L IS62LV2568LL 256K x 8 LOW POWER and LOW V+ CMOS STATIC RAM FEATURES • Access times of 55, 70, 100 ns • Low active power: 126 mW max, L, LL • Low standby power: 36 µW (max, L) and 7.2 µW (max, LL) CMOS standby • Low data retention voltage: 1.5V (min.)


    Original     		PDF IS62LV2568L IS62LV2568LL 32-pin 8x20mm 32-pin 48-pin IS62LV2568L IS62LV2568LL

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    Untitled

    Abstract: No abstract text available
    Text: IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV256 IS61LV256 768-word IS61LV256-12TI IS61LV256-12JI 300mil IS61LV256-15T IS61LV256-15J IS61LV256-15TI

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory

    K9F2G08U0B-PCB0

    Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
    Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●


    Original     		PDF K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    IC63LV1024-8BI

    Abstract: No abstract text available
    Text: IC63LV1024 Document Title 128K x 8 Hight Speed SRAM with 3.3V Central Power Revision History Revision No History Draft Date 0A 0B Initial Draft Add B 36-pin TF-BGA 6x8mm and H (32-pin TSOP-1 8x13.4mm) package type To correct the TYPO error September 12,2001


    Original     		PDF IC63LV1024 36-pin 32-pin AHSR025-0C IC63LV1024-15B IC63LV1024-15H IC63LV1024-15T IC63LV1024-15J IC63LV1024-15K IC63LV1024-8BI

    IC63LV1024

    Abstract: IC63LV1024-10T IC63LV1024-8B IC63LV1024-8J IC63LV1024-8K IC63LV1024-8T IC63L
    Text: IC63LV1024 Document Title 128K x 8 Hight Speed SRAM with 3.3V Central Power Revision History Revision No History Draft Date Remark 0A 0B Initial Draft Add B 36-pin TF-BGA 6x8mm and H (32-pin TSOP-1 8x13.4mm) package type September 12,2001 June 20,2002 The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC63LV1024 36-pin 32-pin AHSR025-0B IC63LV1024-8B IC63LV1024-8H IC63LV1024-15T IC63LV1024-15J IC63LV1024-15K IC63LV1024 IC63LV1024-10T IC63LV1024-8B IC63LV1024-8J IC63LV1024-8K IC63LV1024-8T IC63L

    64Kx8 CMOS RAM

    Abstract: KM428C257 zip 40pin 52PLCC
    Text: FUNCTION GUIDE MEMORY ICs Synchronous SRAM Power Dissipation Den. 1M 288K 512K Part Name KM741006 KM791001 256K 128K KM 79C86 KM 79C40 32K 32K KM 718B513 KM718BV513 KM 718B514 1M Speed ns 36 SOJ 32 SOJ Now NoW X 9 CMOS CMOS 190 190 44 PLCC 9 14/19/24 14/19/24


    OCR Scan     		PDF KM741006 KM791001 79C86 79C40 718B513 KM718BV513 718B514 KM718BV514 718B520 KM718BV520 64Kx8 CMOS RAM KM428C257 zip 40pin 52PLCC