1403A
Abstract: transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE
Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation 2.5V Internal Bandgap Reference can be Overdriven
|
Original
|
PDF
|
LTC1403/LTC1403A
12-Bit/14-Bit,
10-Lead
v/LTC1667/LTC1668
12-/14-/16-Bit,
50Msps
LTC1592
16-Bit,
LT1790-2
OT-23
1403A
transistor 1403A
LTC1403A
LTC1403CMSE
LTC1403IMSE
|
1403A
Abstract: 74ACTxx transistor 1403A LTC1403A
Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation –40°C to 125°C Guaranteed Operation
|
Original
|
PDF
|
LTC1403/LTC1403A
12-Bit/14-Bit,
10-Lead
groun66/LTC1667/LTC1668
12-/14-/16-Bit,
50Msps
LTC1592
16-Bit,
LT1790-2
OT-23
1403A
74ACTxx
transistor 1403A
LTC1403A
|
SN1403
Abstract: 1403A transistor 1403A LTC1403A LTC1403CMSE LTC1403IMSE b00 sot23 014si 74ACTxx series
Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation 2.5V Internal Bandgap Reference can be Overdriven
|
Original
|
PDF
|
LTC1403/LTC1403A
12-Bit/14-Bit,
10-Lead
v7/LTC1668
12-/14-/16-Bit,
50Msps
LTC1592
16-Bit,
LT1790-2
OT-23
SN1403
1403A
transistor 1403A
LTC1403A
LTC1403CMSE
LTC1403IMSE
b00 sot23
014si
74ACTxx series
|
Untitled
Abstract: No abstract text available
Text: LTC1403/LTC1403A Serial 12-Bit/14-Bit, 2.8Msps Sampling ADCs with Shutdown FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.8Msps Conversion Rate Low Power Dissipation: 14mW 3V Single Supply Operation –40°C to 125°C Guaranteed Operation
|
Original
|
PDF
|
LTC1403/LTC1403A
12-Bit/14-Bit,
10-Lead
1403/LTC1403A
ADCs7/LTC1668
12-/14-/16-Bit,
50Msps
LTC1592
16-Bit,
|
diode.18
Abstract: IRHQ57110 Q 371 Transistor IRHQ53110 IRHQ54110 IRHQ58110 PAD LCC28 46a -30 volt regulator lcc 28 socket 1000K
Text: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)
|
Original
|
PDF
|
PD-94211D
LCC-28)
IRHQ57110
IRHQ53110
IRHQ54110
IRHQ58110
1000K
LCC-28
MIL-STD-750,
diode.18
IRHQ57110
Q 371 Transistor
IRHQ53110
IRHQ54110
IRHQ58110
PAD LCC28
46a -30 volt regulator
lcc 28 socket
|
Untitled
Abstract: No abstract text available
Text: PD-94211D RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-28 IRHQ57110 100V, Quad N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHQ57110 Radiation Level RDS(on) 100K Rads (Si) 0.27Ω ID 4.6A IRHQ53110 300K Rads (Si) 0.27Ω 4.6A IRHQ54110 500K Rads (Si)
|
Original
|
PDF
|
PD-94211D
LCC-28)
IRHQ57110
IRHQ53110
IRHQ54110
IRHQ58110
1000K
LCC-28
MIL-STD-750,
|
Untitled
Abstract: No abstract text available
Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω
|
Original
|
PDF
|
PD-91781C
IRHQ6110
LCC-28)
IRHQ63110
LCC-28
MIL-STD-750,
80volt
|
IRHQ563110
Abstract: IRHQ567110
Text: PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω
|
Original
|
PDF
|
94057B
IRHQ567110
LCC-28)
IRHQ567110
IRHQ563110
MIL-STD-750,
MlL-STD-750,
-100V,
|
IRHQ563110
Abstract: IRHQ567110 lcc 20 test socket
Text: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω
|
Original
|
PDF
|
PD-94057C
IRHQ567110
LCC-28)
IRHQ567110
IRHQ563110
-100V,
MIL-STD-750,
MlL-STD-750,
lcc 20 test socket
|
IRHQ6110
Abstract: IRHQ63110
Text: PD - 91781A IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)
|
Original
|
PDF
|
1781A
IRHQ6110
LCC-28)
IRHQ63110
MIL-STD-750,
MlL-STD-750,
-100V,
IRHQ6110
IRHQ63110
|
IRHQ6110
Abstract: IRHQ63110
Text: PD - 91781B IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si)
|
Original
|
PDF
|
91781B
IRHQ6110
LCC-28)
IRHQ63110
MlL-STD-750,
-100V,
LCC-28
IRHQ6110
IRHQ63110
|
IRHQ563110
Abstract: IRHQ567110
Text: PD - 94057 IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 4# TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω
|
Original
|
PDF
|
IRHQ567110
LCC-28)
IRHQ567110
IRHQ563110
MIL-STD-750,
MlL-STD-750,
-100V,
LCC-28
|
Untitled
Abstract: No abstract text available
Text: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω
|
Original
|
PDF
|
PD-91781C
IRHQ6110
LCC-28)
IRHQ63110
80volt
MlL-STD-750,
-100V,
|
Untitled
Abstract: No abstract text available
Text: PD-94057C IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT LCC-28 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω
|
Original
|
PDF
|
PD-94057C
IRHQ567110
LCC-28)
IRHQ567110
IRHQ563110
-100V,
MIL-STD-750,
MlL-STD-750,
|
|
figure of full adder circuit using nor gates
Abstract: tristate buffer cmos LAH3 carry select adder 16 bit using fast adders full adder circuit using nor gates microprocessor radiation hard M2909
Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ MA9000 Series
|
Original
|
PDF
|
MA9000
DS3598-3
figure of full adder circuit using nor gates
tristate buffer cmos
LAH3
carry select adder 16 bit using fast adders
full adder circuit using nor gates
microprocessor radiation hard
M2909
|
full adder circuit using nor gates
Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
|
Original
|
PDF
|
MA9000
DS3598-3
full adder circuit using nor gates
D-latch
DIL40
DIL48
half adder ttl
half adder circuit using nor and nand gates
microprocessor radiation hard datasheet
SRDL
DIL14
DIL16
|
Untitled
Abstract: No abstract text available
Text: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY FUJITSU M B M 100484A -8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage
|
OCR Scan
|
PDF
|
16384-BIT
00484A
16384-BIT
PACKAGE53
F28014S
MBM10
|
Untitled
Abstract: No abstract text available
Text: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage
|
OCR Scan
|
PDF
|
16384-BIT
MBM10484AAugust
16384-BIT
0484A
28-PAD
LCC-28C-F02)
24PLCS)
02ITYP
|
Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 3 7 4 cj7b2 0Qafl3bS A 23E D FU JITSU MBM10484A-10 August 1988 Edition 2.0 T -^ t-2 ^ -0 8 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage
|
OCR Scan
|
PDF
|
MBM10484A-10
16384-BIT
0484A
08S-1C
374m2
T-46-23-08
28-PAD
|
Untitled
Abstract: No abstract text available
Text: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY F U JIT SU M BM 1 0 0 4 8 4 A -8 August 1988 E d itio n 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage
|
OCR Scan
|
PDF
|
16384-BIT
00484A
28-PAD
|
Untitled
Abstract: No abstract text available
Text: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A-10 A u g u st 1 9 88 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM O RY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage
|
OCR Scan
|
PDF
|
16384-BIT
0484A-10
16384-BIT
0484A
MBM10484A-10
28-PAD
LCC-28C-F02)
|
Untitled
Abstract: No abstract text available
Text: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY M BM 10484A -8 August 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY T h e F u jits u M B M 1 0 4 8 4 A is f u lly decoded 1 6 3 8 4 -b it E C L re a d /w rite random access m e m o ry designed fo r high-speed scratch pad, c o n tro l and b u ffe r storage
|
OCR Scan
|
PDF
|
16384-BIT
0484A
|
Untitled
Abstract: No abstract text available
Text: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.
|
OCR Scan
|
PDF
|
16384-BIT
7134E-W
7T34-W
134-W,
DIP-20C-C03
8C-A01)
28-PAD
LCC-28C-A02)
|
Untitled
Abstract: No abstract text available
Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
|
OCR Scan
|
PDF
|
DS3598-3
MA9000
D0242bl
3Sx24nnnxxxxx
37bflS22
00242b2
|