IRG4IBC30UD
Abstract: PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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Original
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PD91753A
IRG4IBC30UD
O-220
IRG4IBC30UD
PD917
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PDF
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Untitled
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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Original
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PD91753A
IRG4IBC30UD
O-220
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PDF
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IGBT IRG4IBC30UD
Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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Original
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PD91753A
IRG4IBC30UD
O-220
Absol20
IGBT IRG4IBC30UD
IRG4IBC30UD
IGBT collector voltage 5kV
ir*c30ud
PD917
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PDF
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IRG4IBC30UD
Abstract: No abstract text available
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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Original
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PD91753A
IRG4IBC30UD
O-220
Absol52-7105
IRG4IBC30UD
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PDF
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