lens laser diode
Abstract: SLD1122VS SLD1135VS 650NM laser diode 5mw 650nm laser diode single power 650nm 5mw 5v laser
Text: SLD1135VS 650nm Index-Guided Red Laser Diode Description The SLD1135VS is a index-guided red laser diode for Laser pointer. The wavelength is 20nm shorter than SLD1122VS. M-294 Features • Small astigmatism 7µm typ. • Small package (φ5.6mm) • Single longitudinal mode
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SLD1135VS
650nm
SLD1135VS
SLD1122VS.
M-294
/www/pdf/sony/sld1135vs
lens laser diode
SLD1122VS
650NM laser diode 5mw
650nm laser diode single power
650nm 5mw 5v laser
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laser diode driver 200 mhz
Abstract: laser 6 pin Oscillator
Text: 3-Channel Laser Diode Driver + Oscillator Features General Description • Ultra-Small Package Outline • High-performance laser diode driver • Current-controlled output current source, 100 mA channel R and 2, 200mA channel 3, requiring one external set resistor per channel
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EL6277C
200mA
QSOP16
laser diode driver 200 mhz
laser 6 pin Oscillator
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HF-808-6000-13C
Abstract: No abstract text available
Text: Product Specifications Features • Up to 6W CW output power from a 100um 0.22NA core fiber. • High Quality, Reliability, and Performance Applications • Solid State Pumping 808nm Multi-Mode High-Heat-Load Modules w/ Fiber Pigtailed Package Description:
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100um
808nm
808nm
808-mm-hhl-fiber-100
HF-808-6000-13C
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laser diode chip 635nm
Abstract: No abstract text available
Text: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength 635nm typ. is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.).
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SLD1132VS
635nm
SLD1132VS
670nm
M-274
laser diode chip 635nm
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Untitled
Abstract: No abstract text available
Text: 400mW /1060nm Single Mode Pump Laser Features • • • • 400mW Kink Free 1060 wavelength Internal cooler and thermistor PM Fiber Applications • Ordering Information Fiber Lasers Part number Description EM250 1060nm SM Pump General Description The EM250 single mode, cooled 1060 nm pump laser delivers up to 400mW of fiber-coupled power. The module is packaged
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400mW
/1060nm
EM250
1060nm
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bragg
Abstract: Grating P162-350-YYYZ P162 F4223
Text: 350mW Single Mode Pump Laser Features • • • • Qualified according to Telcordia GR-468-CORE Optional Bragg grating Internal cooler and thermistor RoHS compliant Applications • • • • Telecom CATV Defense Life Science General Description The EM4 P162 line of single mode, cooled 980 nm pump lasers deliver up to 350mW of fiber-coupled power. The modules are
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350mW
GR-468-CORE
bragg
Grating
P162-350-YYYZ
P162
F4223
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TO56 package DIMENSION
Abstract: 138265 GR-468 TO56 10 gb laser diode TO56 package 259013-1 InGaAsP to56 laser
Text: PDF Datasheet 1654551 Revised 6-03 Only available as PDF at: Electro-Optic Packaged Components 1.3 µm LED Product Facts • High coupled power, typically 75 µW into 62.5 µm fiber ■ High reliability MTTW
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com/fiberoptics/documents/1654551
100mA
TO56 package DIMENSION
138265
GR-468
TO56
10 gb laser diode
TO56 package
259013-1
InGaAsP
to56 laser
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6308GH
NX6308GH
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6411GH
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monitor nec
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6308GH
NX6308GH
monitor nec
PX10160E
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FTTH
Abstract: NX6410GH PX10160E A1490
Text: DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6410GH
NX6410GH
FTTH
PX10160E
A1490
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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NX5317EH
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5317EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317EH
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PX10160E
Abstract: A1490
Text: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6411GH
PX10160E
A1490
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6309GH
NX6309GH
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H32E
Abstract: No abstract text available
Text: 19-1570; Rev 4; 1/05 KIT ATION EVALU E L B A IL AVA +3.3V, 2.5Gbps SDH/SONET Laser Driver with Current Monitors and APC Features The MAX3869 is a complete, single +3.3V laser driver for SDH/SONET applications up to 2.5Gbps. The device accepts differential PECL data and clock inputs
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100mA
MAX3869
MAX3869
MAX3869ETJ
MAX3869EHJ+
MAX3869EHJ
21-0079F
H32E-5*
H32E
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NX6411GH-AZ
Abstract: PX10160E
Text: LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)
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NX6411GH
NX6411GH
PL10644EJ04V0DS
NX6411GH-AZ
PX10160E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5322 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
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A1490
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6410GH
A1490
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DIODE AGT
Abstract: MAX3263EVKIT max3263evk
Text: 19-0432; Rev 3; 12/05 Single +5V, Fully Integrated, 155Mbps Laser Diode Driver _Features The MAX3263 is a complete, easy-to-program, single +5V-powered, 155Mbps laser diode driver with complementary enable inputs and automatic power control
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155Mbps
MAX3263
MAX3263C
21-0056C
A24-2*
DIODE AGT
MAX3263EVKIT
max3263evk
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nec laser
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5321 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5321 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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nec laser
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6311EH
NX6311EH
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BLM11HA601SPT
Abstract: No abstract text available
Text: 19-2081; Rev 3; 2/07 +3.3V, 2.5Gbps Low-Power Laser Driver Features ♦ 30mA Power-Supply Current The MAX3273 is a compact, low-power laser driver for applications up to 2.7Gbps. The device uses a single +3.3V supply and typically consumes 30mA. The bias and modulation current levels are programmed by
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MAX3273
21-0106E
G2444-1*
21-0139E
T2444
BLM11HA601SPT
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX7339BB-AA 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7339BB-AA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.
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NX7339BB-AA
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