9RV3
Abstract: No abstract text available
Text: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile
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DS-VA-GT1000-eng
GT1000
GT1020
GT1024
9RV3
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PED relay cross reference
Abstract: LR40787 schrack zt570524 relay Schrack ZT570524 Magnecraft w67 700-HC14Z24 Schrack ZT Allen Bradley 11-pin relay pin out diagram schrack relay cross reference pt570615 finder 15.21
Text: Your Contact for Industrial Relays SECTION SOCKET COMPATIBLE AND FLANGE MOUNTED RELAYS 1 TO 30 AMPERES 1 SOCKET COMPATIBLE & FLANGE MOUNT RELAYS 782H 781 CERTIFIED CLASS 1 DIVISION 2 FOR HAZARDOUS LOCATIONS 782XBX/XDX RELAY SERIES ISO 9002 QS 9000 L W H 1.521 x 0.551 x 1.082
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782XBX/XDX
W21ACPX-2
136-62T3A1
R10E1
4-V185
4-V700
W67TRCSX-13
W67RPCX-2
W67RPCX-3
PED relay cross reference
LR40787
schrack zt570524 relay
Schrack ZT570524
Magnecraft w67
700-HC14Z24
Schrack ZT
Allen Bradley 11-pin relay pin out diagram
schrack relay cross reference pt570615
finder 15.21
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MT3809G
Abstract: DEK13
Text: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G
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X-VA-MT3809G-MT3810G-eng
541B182AAG
MT3809G
MT3810G
MT3809G
DEK13
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PED relay
Abstract: VOLTAGE LEVEL RELAY SM 125 230 SJ 155 Diode SJ sj 45 Transistor SJ relay 12 volt 6a 100MA RELAY PE Relay SJ 02
Text: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible
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K3G250-AY11-C2
Abstract: K3G310-BB49-02 engel
Text: EC centrifugal fans – RadiPac version 2014-06 RadiPac: Now even more efficient The line of radial plug fans with GreenTech EC motor technology already All RadiPacs listed in the catalogue exceed the tougher new minimum established in the market has been expanded further. Our new product
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PED relay
Abstract: No abstract text available
Text: Current and Voltage Controls 1-Phase AC/DC Current Control Types SJ 105, SJ 155 • Current control relay with absolute scale and internal shunt • Measuring ranges: SJ 105: 0.2 - 5 ADC SJ 155: 0.2 - 5 AAC • Knob-adjustable current level • Latching at set level possible
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RXIL 2
Abstract: asea time-lag relay RI asea relay RI ASEA RI panel and cubicles catalogue capacitor trip unit DIODE RK 69 RK-71 RXZ41 RK714
Text: ASEA Capacitor unit type RXTCD 4 Used, fo r example, for tripp in g of circuit-breakers, during interruption of the auxiliary power supply Built-in circuits for controlling the charge of the capacitor Service life of capacitor, 10 years Catalogue RK 71-11 E
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RK714
101-AA
007-AA
S-721
RXIL 2
asea time-lag relay RI
asea relay RI
ASEA RI
panel and cubicles catalogue
capacitor trip unit
DIODE RK 69
RK-71
RXZ41
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1RFD110
Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Text: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*
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IRFD110/111/112/113
IRFD110R/111R/112R/113R
IRFD110,
IRFD111,
IRFD112,
IRFD113
IRFD110R,
IRFD111R,
IRFD112R,
IRFD113R
1RFD110
FD110
FD-111 diode
of IRFD 110
IRFD 110
HARRIS IRFD110
irfd11
IRFD111
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Untitled
Abstract: No abstract text available
Text: • 4302271 0053742 ÜJ HARRIS 4Tb ■ August 1991 HAS 2N 6769 2 N 6770 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T O -2 0 4 A A • 11A and 12A, 450V - 500V BOTTOM VIEW • rQ3 |on = 0.5H and 0.40 • SOA is Power-Dissipation Limited
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43D2271
2N6769,
2N6770
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automatic phase selector circuit diagram
Abstract: RAAAK RAZOG PS 307 5A ASEA ABG 10 SELECTOR SWITCH ASEA ABG PS 307 10A asea razog
Text: ASEA Catalogue RK 85-16 E Edition 1 April 1978 File R. Part 1 Reclosing relay type R a AAK For line*! vjith distance protection Single eiiot siigle-phase or three-phase reclosing ¡mended for y ss together with dis tance reiay svpg RAZO G but can be adapted to other distance relays
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1RFF113
Abstract: FF113R IRFF111R 1RFF110
Text: 3 H A R R I S IRFF110/ 111/112/113 IRFF110R/111R/112R/113R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-205AF • 3.0A and 3.5A, 80V - 100V BOTTOM VIEW • rDS(on = O-ßf1 and 0 .8 ft • Single Pulse Avalanche Energy Rated*
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IRFF110/
IRFF110R/111R/112R/113R
T0-205AF
1RFF110,
IRFF111,
IRFF112,
IRFF113
IRFF110R,
IRFF111R,
IRFF112R,
1RFF113
FF113R
IRFF111R
1RFF110
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IRF232
Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Text: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re
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IRF220,
IRF221,
IRF222,
IRF223
08TAIN
50KSZ
IRF232
IRF220
IRF221
IRF222
IRF223
IRF230
IRF231
IRF233
varo diode
diode oa 90
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PED relay
Abstract: anzac mixer anzac MD MD-425
Text: X MODEL DOUBLE BALANCED MIXER MD-425 RF, LO 5-2000 MHz IF 10-600 MHz LO Power +7 dBm Relay Header MCL Model SRA-11 Replacement Guaranteed Specifications* From -55°C to +85°C F requ ency Range RF, LO Ports IF Port C o nversion Loss 5 - 1000 MHz 1000 - 2000 MHz
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MD-425
SRA-11
PED relay
anzac mixer
anzac MD
MD-425
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IRF9640
Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
Text: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d
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IRF9640,
IRF9641
IRF9642,
IRF9643
IRF9641,
IRF9642
92CS43279
97CS-43280
IRF9640
transistor IRF9640
irf9640 mosfet
IRF9643
f9640
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irf9241
Abstract: No abstract text available
Text: H a r r i IRF9240, IRF9241, IRF9242,1RF9243 s s e m i c o n d u c t o r -9A and -11 A, -150V and -200V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -9A a n d -11 A,-150V and-200V • High Input Impedance These are P-Channel enhancement mode silicon gate
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IRF9240,
IRF9241,
IRF9242
1RF9243
-150V
-200V,
and-200V
IRF9240
1RF9241,
irf9241
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IRF9643
Abstract: IRF9642 IRF9641
Text: HARRIS IRF9640, IRF9641 IRF9642, IRF9643 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Package Features T 0 -2 2 0 A B • -9 A and -11 A, -1 5 0 V and -200V TOP VIEW • rDS ON = 0 .5 Cl and 0 .7 ft • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited
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IRF9640,
IRF9641
IRF9642,
IRF9643
-200V
IRF9641,
IRF9642
IRF9643
F9643
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IRF9640
Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Text: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
TA17522.
IRF9640
IRF1S9640
IIRF9640
IRF9643
IRF9642
IRF9641
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f9240
Abstract: irf9240r irf 44 n rf924
Text: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated
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F9241
-200V
IRF9240,
IRF9241,
IRF9242
IRF9243
conveRF9242,
F9243
4J26Q
f9240
irf9240r
irf 44 n
rf924
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Untitled
Abstract: No abstract text available
Text: Hormis S RFP50N05, RFG50N05 Semiconductor 7 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 50A,50V These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI integrated circuits, gives
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RFP50N05,
RFG50N05
TB334
AN7254
AN7260
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Untitled
Abstract: No abstract text available
Text: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFPG40
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F1S40N10
Abstract: 40N10 TA9846 rfp40n10
Text: HARRIS S E M I C O N D U C T O R RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea
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RFG40N10,
RFP40N10,
RF1S40N10,
RF1S40N10SM
TA9846
040i2
AN7254
AN7260.
F1S40N10
40N10
TA9846
rfp40n10
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F1S40N10
Abstract: RFP40N10
Text: H A R R IS sem iconductor R F G 4 0 N 10, R F P 4 0 N 10, R F 1S 4 0 N 10, R F 1S 4 0 N 10S M 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 40A,100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea
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040i2
AN7254
AN7260.
RFG40N10,
RFP40N10,
RF1S40N10,
RF1S40N10SM
F1S40N10
RFP40N10
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Untitled
Abstract: No abstract text available
Text: i H s A e - R c o R - u IR FF 110, IRFF111, IRFF112, IRFF113 i s c t c 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFF111,
IRFF112,
IRFF113
IRFF110,
RFF112,
RFF113
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IRF9640
Abstract: No abstract text available
Text: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
and-200V
IRF9640
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