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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.	Original	PG2012TB PG2012TB	PDF
HS350 Abstract: VP215 SW SPDT 6pin Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.	Original	PG2012TB PG2012TB HS350 VP215 SW SPDT 6pin	PDF
SW SPDT 6pin Abstract: HS350 VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
PG2012TB Abstract: No abstract text available Text: GaAs INTEGRATED CIRCUIT PG2012TB L-BAND SPDT SWITCH DESCRIPTION The PG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.	Original	PG2012TB PG2012TB HS350 WS260 VP215 IR260 PG10218EJ01V0DS	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.	Original	PG2012TB PG2012TB	PDF