NE3508M04-T2-A
Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC Ga FET marking L
Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
NE3508M04-T2B-A
NEC Ga FET marking L
NE3508M04-T2B-A
nec microwave
NE3508M04-A
NE3508M04-T2-A
HS350
NE3508M04
NE3508M04-T2
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transistor marking M04 GHZ
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
PG10586EJ02V0DS
transistor marking M04 GHZ
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