tlp250f
Abstract: No abstract text available
Text: TLP250F INV TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TLP250F(INV) Transistor Inverters Inverter for Air Conditioners IGBT Gate Drivers Power MOSFET Gate Drivers Unit: mm The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode optically coupled to an integrated photodetector and is housed in an
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TLP250F
TLP250
400119controlled
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driver photodiode tia
Abstract: TOSA model
Text: Preliminary Data Sheet May 2004 RQP1001 10 Gb/s PIN-TIA ROSA Description The RQP1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s PIN photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed
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RQP1001
DS04-003-1
DS04-003)
driver photodiode tia
TOSA model
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AGILENT A 1610 OPTICAL
Abstract: No abstract text available
Text: Preliminary Data Sheet May 2004 RQA1001 10 Gb/s APD-TIA ROSA Description The RQA1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s APD photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed
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RQA1001
DS04-004-1
DS04-004)
AGILENT A 1610 OPTICAL
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Q62702P0956
Abstract: sfh203fa SFH203 RoHS SFH203
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)
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400nm
1100nm
SFH203)
750nm
SFH203FA)
203FA)
Q62702P0955
Q62702P0956
sfh203fa
SFH203 RoHS
SFH203
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Untitled
Abstract: No abstract text available
Text: Data Sheet Pacific Silicon Sensor Inc. Series 5: High Speed Epitaxial P-I-N Photodiodes In addition to these photodiodes, Pacific Silicon Sensor can design and manufacture other devices, in differing sizes or shape, in original packaging and/or with similar specifications; both
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850nm
718-PS11
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TEFD4300
Abstract: APPLICATION CIRCUIT OF TSAL4400
Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times
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TEFD4300
VSLB3940,
TSUS4300,
TSAL4400
2002/95/EC
2002/96/EC
TEFD4300
2011/65/EU
2002/95/EC.
APPLICATION CIRCUIT OF TSAL4400
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Untitled
Abstract: No abstract text available
Text: HSDL - 9000 Miniature Surface-Mount Ambient Light Photo Sensor Data Sheet Description The HSDL-9000 is a low cost, digital-output ambient light photo sensor in miniature industry-standard PLCC leadfree surface-mount package. It incorporates a photodiode, which peaks in human luminosity curve at 550 nm. Hence,
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HSDL-9000
LQ2647
LQ3147
LQ3187
5989-2300EN
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Untitled
Abstract: No abstract text available
Text: Photodiodes Surface mount type Side view RPMD-0101W1 Datasheet lDimensions (Unit : mm) lApplications Note : Unspecified tolerance shall be 0.15. • Car navigations, Car audios • Household applications • OAs, FAs • PCs, peripheral devices • Other general-purpose applications
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RPMD-0101W1
750nm)
R1102A
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Untitled
Abstract: No abstract text available
Text: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional
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MN34041PL
12-bit
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Untitled
Abstract: No abstract text available
Text: Agilent HSDL-9100 Miniature Surface-Mount Proximity Sensor Data Sheet Features • Excellent optical isolation resulting in near zero optical cross-talk • High efficiency emitter and high sensitivity photodiode for high signal-to-noise ratio • Low cost & lead-free miniature
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HSDL-9100
HSDL9100
5989-2301EN
5989-3179EN
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Untitled
Abstract: No abstract text available
Text: TEMD5010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity
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TEMD5010X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
TEMD5010X01
2011/65/EU
2002/95/EC.
2011/65/EU.
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pn photodiode
Abstract: No abstract text available
Text: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity
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BPW21R
2002/95/EC
2002/96/EC
BPW21R
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
pn photodiode
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Untitled
Abstract: No abstract text available
Text: BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Radiant sensitive area (in mm2): 0.78 • Leads with stand-off • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm
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BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PP403
Abstract: No abstract text available
Text: PP403 Through-hole PIN Photodiode/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・Flat Lenz type ・High Photo Current : 1.5 A TYP. VR=5V,Ee=0.5mW/cm2 ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength
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PP403
950nm
200pcs
PP403
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PIN Photodiode 1550nm
Abstract: PIN-TIA 5v InGaAs Photodiode 1550nm
Text: 1550nm Emitting , 1310nm Receiving PIN-TIA, 5V , Bi-directional Diplexer Optical Module C-15/13-F01/03/05- PX-SXXX/XXX Features • Single-fiber bi-directional operation • Laser diode with multi-quantum- well structure • Low threshold current • InGaAs/InP PIN Photodiode with TIA
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1550nm
1310nm
C-15/13-F01/03/05-
LUMNDS518-MAR2904
PIN Photodiode 1550nm
PIN-TIA 5v
InGaAs Photodiode 1550nm
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PRBS23
Abstract: 25gbps pin-tia pxxx PIN-TIA
Text: 2.5Gbps PIN-TIA Receiver ModulesReceptacle & Pigtailed 5V T-11-2500-R/P-XXX Features • InGaAs/InP PIN Photodiode with transimpedance amplifier • High sensitivity with AGC* • Differential ended output • Single+5V operation • -40 to 85ºC operating temperature
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T-11-2500-R/P-XXX
LUMNDS558-0803
PRBS23
25gbps pin-tia
pxxx
PIN-TIA
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thermistor 054
Abstract: No abstract text available
Text: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max
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OPD320
1550n
1000o
50/125pm)
thermistor 054
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TCD1200D
Abstract: TCD1200 TCD-12
Text: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution
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TCD1200D
TCD1200D
TCD1200
TCD-12
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TLP582
Abstract: 1119a
Text: GaAßAs IRED TLP582 a PHOTO-IC Unit in mm HOS FET GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaAiAs light emitting 1 8 .9 ± 0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that
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TLP582
TLP582
400ns
1119a
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PIN Photodiode side look
Abstract: TOLD9442M
Text: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
35idual
PIN Photodiode side look
TOLD9442M
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TCD120AC
Abstract: No abstract text available
Text: TCD120AC The TCD120AC is a contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 4800 photodiodes which provide a A00 dots/inch resolution across an A3 size paper. By the aid of analog line memories fabricated
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TCD120AC
TCD120AC
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Untitled
Abstract: No abstract text available
Text: TLP251 GaAGAs IRED & PHOTO-IC TLP251 INVERTER FOR A IR CO NDITIO NO R INDUCTION HEATING TRANSISTOR INVERTER P O W E R M O S FET GATE DRIVE IGBT GATE DRIVE The Toshiba T L P2 5 1 consists of a G a A f A s lig h t em itting diode and a integrated photodetector.
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TLP251
TLP251)
0-35V
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TC17G
Abstract: Photodiode Array 32 element tcd storage gate ccd TCD128AC
Text: TCD128AC The TCD12P.AC is a contact type CCD linear image sensor. The device is consist of 4 CCD chips which are collinearly arranged. The device contains a row of 1728 photodiodes which provides a 8 dots/mm resolution across A4 size 216mm document. And this device includes
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TCD128AC
TCD12P
216mm)
128AC
TC17C014AF-0042r
432ensor.
TC17G
Photodiode Array 32 element
tcd storage gate ccd
TCD128AC
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DL5551P2
Abstract: NDL5516PC
Text: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high
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NDL5506P
14-PIN
DL5590P
NDL5531P
NDL5531P1
DL5531P2
NDL5592P
NDL5592P1
DL5551P2
NDL5516PC
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