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    PHOTODIODES GERMANIUM Search Results

    PHOTODIODES GERMANIUM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101P Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    PHOTODIODES GERMANIUM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Photodiodes

    Abstract: 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015
    Text: Chpt. 49 Final 10/11/99 11:34 AM Page 49.2 Laser-Beam Characterization Available in: ✔ Production Quantities ✔ Custom Configurations Silicon Photodiodes Photodiodes, Integrating Spheres & Amplifiers UNMOUNTED SILICON PHOTODIODES Single-element planar-diffused silicon photodiodes are ideal


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    10-mm2 100-mm2 25-mmdiameter wh007 011/C3 011/C 10-nm Photodiodes 13 dsi 005 Melles Melles Griot Photodiodes Germanium PIN 13DAS011 13DSI001 f-19 10414 13 DMA 015 PDF

    PDINP075ST83-W-0

    Abstract: PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector
    Text: InGaAs PIN Photodiodes 75 µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from 1100 to 1650nm. These devices are available in fiber pigtailed


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    1650nm. PDINP075ST83-W-0 PDINP075SC23-W-0 PDINP075FC13-W-0 laser Silicon Detector PDF

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


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    BD 509 CONNECTOR

    Abstract: PDINP075100A Flexcore PDINP075500A-0-0-01
    Text: PD LD Inc PDINP Series PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our PDINP Series are 75um diameter InGaAs PIN photodiodes thar are optimal from


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    1650nm. BD 509 CONNECTOR PDINP075100A Flexcore PDINP075500A-0-0-01 PDF

    GM10HS

    Abstract: GM7HS GM8HS GM5HS GM7VHR gm8VHR GM6VHS GM5VHR GM6VHR GM7HS datasheet
    Text: Germanium Photodetector Large Area Ge. Photodiodes Home Products Response Table Special Options: ● ● ● Thermal-Electric Coolers Active Mounts /Ceramic Substrates Neutral Density Filters ● ● ● Custom Devices and Packaging Two-Colors Amplified Devices


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    180htm GM10HS 20photodiode 20spec2 GM10HS GM7HS GM8HS GM5HS GM7VHR gm8VHR GM6VHS GM5VHR GM6VHR GM7HS datasheet PDF

    GM7VHR

    Abstract: No abstract text available
    Text: Germanium Photodetector Large Area Ge. Photodiodes Special Options: ● Thermal-Electric Coolers ● Custom Devices and Packaging ● Active Mounts /Ceramic Substrates ● Two-Colors ● Neutral Density Filters ● Amplified Devices Electrical Characteristics @ 25°C


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    GM10HS 20photodiode 20spec2 GM7VHR PDF

    IGA-010

    Abstract: G-010 S-010 S-025 S-050 S-050UV IGA-030 IGA-010 detector g030 TO5 packages
    Text: Detector Components EOS offers a line of Silicon, Germanium, Indium Gallium Arsenide, and Indium Gallium Arsenide Antimonide photodiodes for use in the 0.3 µm to 2.4 µm spectrum. Material Si Ge InGaAs InGaAsSb Diodes operating at room temperature or TE cooled


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    100Hz S-010 S-010/TE2 IGA-030 2010/TE2 T0-18 IGA-030/TE2 IGA-020 G-020 IGA-010 G-010 S-010 S-025 S-050 S-050UV IGA-030 IGA-010 detector g030 TO5 packages PDF

    Ir photodiodes gav40

    Abstract: GAV40 GPD optoelectronics photodetectors avalanche photodiodes IR photodetectors GAV100 GAV30 Germanium Power Devices TO46 package high-speed
    Text: GPD GAV30 GAV40 GAV100 OPTOELECTRONICS CORP. Ge Avalanche Photodiodes • OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers GPD Optoelectronics Corp. GAV30 GAV40 GAV100 CC Electrical Characteristics @ 25 °C


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    GAV30 GAV40 GAV100 GAV40 MIL-I-45208. Ir photodiodes gav40 GPD optoelectronics photodetectors avalanche photodiodes IR photodetectors GAV100 GAV30 Germanium Power Devices TO46 package high-speed PDF

    germanium photodiode PIN

    Abstract: PIN-DSS Ge dual photodiode ir thermo sensor photodiode ge "Thermoelectric Cooler"
    Text: DUAL SANDWICH DETECTOR SERIES TWO COLOR PHOTODIODES APPLICATIONS FEATURES • Flame Temperature sensing • Spectrophotometer • Dual-wavelength detection • IR Thermometers for Heat • Compact • Hermetically Sealed • Low Noise • Wide Wavelength Range


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    Avalanche photodiode APD

    Abstract: germanium photodiode PIN photodiode germanium photodiode "interference filter" Photodiodes Germanium receiver photodiode preamplifier AGC photovoltaic receiver 1550 pin Photodiode preamp avalanche photodiodes PREAMP circuit diagram
    Text: APPLICATIONS OPTOELECTRONICS Joachim Krug PIN photodiodes with transimpedance amplifiers for optical networks: Compact pre-amp modules immune to interference The first amplifier stage of a receiver circuit in optical networks is usually a transimpedance amplifier. It has


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    GAP100

    Abstract: GAP300 Germanium Power Diodes GAP75 GAP60CS GAP60 10E-15 Germanium power Photodiodes Germanium PIN TO46
    Text: GAP60 GAP60CS GAP75 GAP100 GAP300 GPD OPTOELECTRONICS CORP. High Speed InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP60 GAP60CS GAP75 GAP100 GAP300


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    GAP60 GAP60CS GAP75 GAP100 GAP300 GAP300 Germanium Power Diodes GAP75 10E-15 Germanium power Photodiodes Germanium PIN TO46 PDF

    J16A-18A-R100U

    Abstract: J16A
    Text: J16A Ge Avalanche Photodiodes APDs (0.8 to 1.5 pm) judson _•!. Description Multiplication Characteristics The J16A series Germanium Ava­ lanche Photodiodes are designed for high-speed applications at 800 and 1300 nm. Judson APDs offer low dark currents


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    1300nm J16A-FC1-R50U 100pm J16A-18A-R100U J16A PDF

    Untitled

    Abstract: No abstract text available
    Text: J ^ E G z G JU D S O N Ge Avalanche Photodiodes APDs 0.8 to 1.5 urn Description Multiplication Characteristics The J16A series Germanium Ava­ lanche Photodiodes are designed for high­ speed applications at 800 and 1300 nm. Judson APDs offer low dark currents and


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    1300nm, 30MHz 3D3Db05 DDGD32fl PDF

    ia2c

    Abstract: No abstract text available
    Text: MITSUBISHI InGaAs PHOTODIODES PD8XX1 SERIES FOR OPTICAL COMMUNICATION MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi H M I T S " 31E » \ -0 7 • ‘T ' M P D 8001, PD 8931 DESCRIPTION FEATURES The PD8XXÎ series are InGaAs avalanche photodiodes de­ •


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    001425G 55/im ia2c PDF

    T018

    Abstract: No abstract text available
    Text: O P T O- ELECT RO NICS INC 17E D • baOSOST 00002Û7 h ■ FAST GERMANIUM PHOTODIODES G D SERIES "r-qv-m DESCRIPTION The GD series photodiodes are high quality ger­ manium diodes housed in T0 1 8 or T 0 5 cans. Low dark current and high sensitivity in the near infrared


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    70x80 100x130 250x250 500x500 GD2000 GD1000 T018 PDF

    PD7005

    Abstract: PD7035 PD7935
    Text: MITSUBISHI InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC tj24ciô2ci G o m a a s s h i m i t s h 31E D SERIES FOR OPTICA L COMMUNICATION " T TYPE NAME - q i - c r ? PD7005, PD7035, PD7935 FEATURES DESCRIPTION M itsubishi PD7XX5 series are InGaAs photodiodes de­


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    tj24clà PD7005, PD7035, PD7935 1300nm) 00mEM2 1300nm, 200ps/dlv PD7005 PD7035 PD7935 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC 31E B ì> SERIES tj24cl ñ 2 ci GGIMEBR ^ HIMITS FOR O P T IC A L C O M M U N IC A TIO N j "T-m-cn TYPE NAME PD7005, PD7035, PD7935 DESCRIPTION FEATURES Mitsubishi PD7XX5 series are InGaAs photodiodes de­


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    tj24cl PD7005, PD7035, PD7935 1600nm 1300nm) 1300nm, PDF

    Germanium Power Devices

    Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
    Text: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)


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    GAV30 GAV40 GAV100 GAV30 GAV100 MIL-I-45208. Germanium Power Devices germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power Germanium PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency


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    Q014E43 300/um 0ai424b 1300nm) 1300nm, PDF

    germanium power devices corporation

    Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
    Text: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■


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    GAV30 GAV60 GAV100 GAV300 GAV60 germanium power devices corporation Germanium Power Devices Germanium Power Diodes GAV300 MIL-45208 TO46 germanium photodiode PIN PDF

    16C70

    Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
    Text: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior


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    J16TE J16TE J16TE2 4C-70 16C-70 32C-70 4C-60 16C-60 16C70 J16D thermistor inas detector inas judson PA-100 Germanium itt PDF

    L1116

    Abstract: RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier C30994E photodiode Avalanche photodiode
    Text: E ELECTRO OPTICS IDE D H 3A741S4 ODDDD4fl T • GEEO C30994E Solid State Gamma-Ray Detector 7 -7 ^ 7 Developmental Type Silicon Avalanche Photodiodes Coupled to Bismuth Germanium Oxide Bi4Ge3012 Scintillators RCA Developmental type C3Q994E con­ sists of tw o Bismuth Germanium Oxide


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    C30994E Bi4Ge3012) C3Q994E Wh514) L1116 RCA photomultiplier Bi4Ge3012 photodiode germanium scintillator photodiode Avalanche photodiode APD 137CS RCA Solid State amplifier photodiode Avalanche photodiode PDF

    J16-5SP-R02M-SC

    Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
    Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


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    3CI30bD5 D0DDS13 J16TE2 1550nm. 3G30L 000021L. J16-5SP-R02M-SC J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M PDF

    J16D

    Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
    Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


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    30BGb05 000DE13 J16TE2 11-mission. 3030L 000D21L, J16D J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM PDF