Untitled
Abstract: No abstract text available
Text: IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage
|
Original
|
PDF
|
IL352
2002/95/EC
2002/96/EC
i179027
UL1577,
E52744
VDE0884)
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage
|
Original
|
PDF
|
IL352
2002/95/EC
2002/96/EC
i179027
UL1577,
E52744
VDE0884)
08-Apr-05
|
IL352
Abstract: VDE0884
Text: IL352 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage
|
Original
|
PDF
|
IL352
2002/95/EC
2002/96/EC
UL1577,
E52744
VDE0884)
i179027
D-74025
26-Oct-04
IL352
VDE0884
|
Untitled
Abstract: No abstract text available
Text: IL352 VISHAY Vishay Semiconductors Phototransistor Optocoupler Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage • Fast Switching Times
|
Original
|
PDF
|
IL352
E52744
i179027
IL352
D-74025
21-Oct-03
|
Untitled
Abstract: No abstract text available
Text: IL352 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage
|
Original
|
PDF
|
IL352
E52744
VDE0884)
i179027
IL352
D-74025
19-Apr-04
|
Untitled
Abstract: No abstract text available
Text: IL352 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Good CTR Linearly Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO = 30 V • Low Saturation Voltage
|
Original
|
PDF
|
IL352
E52744
VDE0884)
i179027
IL352
D-74025
18-Nov-03
|
Untitled
Abstract: No abstract text available
Text: Data Sheet PS2705-1 R08DS0093EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER DESCRIPTION The PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
|
Original
|
PDF
|
PS2705-1
R08DS0093EJ0300
PS2705-1
PS2705-1-F3
E72422
|
Untitled
Abstract: No abstract text available
Text: Data Sheet PS2702-1 R08DS0099EJ0300 Rev.3.00 Jan 29, 2013 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2702-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected phototransistor.
|
Original
|
PDF
|
PS2702-1
R08DS0099EJ0300
PS2702-1
PS2702-1-F3
E72422
|
Untitled
Abstract: No abstract text available
Text: IL352 Phototransistor Optocoupler FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*
|
Original
|
PDF
|
IL352
IL352
1-888-Inï
|
IL352
Abstract: IR 2137 IC
Text: IL352 Phototransistor Optocoupler FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*
|
Original
|
PDF
|
IL352
IL352
1-888-Infineon
IR 2137 IC
|
IL352
Abstract: No abstract text available
Text: IL352 Phototransistor Optocoupler Preliminary FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 1768 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*
|
Original
|
PDF
|
IL352
IL352
|
R705A
Abstract: No abstract text available
Text: Data Sheet PS2705A-1 R08DS0073EJ0500 Rev.5.00 Jan 9, 2013 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER DESCRIPTION The PS2705A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.
|
Original
|
PDF
|
PS2705A-1
R08DS0073EJ0500
PS2705A-1
PS2705A-1-F3:
E72422
CAN/CSA-C22
60950Taiwan
R705A
|
IL352
Abstract: CTR34
Text: IL352 Phototransistor Optocoupler FEATURES • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 3000 VRMS • High Collector-Emitter Voltage, VCEO=30 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS*
|
Original
|
PDF
|
IL352
IL352
17-August-01
CTR34
|
r701a
Abstract: R08DS0071EJ0600
Text: Data Sheet PS2701A-1 R08DS0071EJ0600 Rev.6.00 Jan 9, 2013 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER DESCRIPTION The PS2701A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.
|
Original
|
PDF
|
PS2701A-1
R08DS0071EJ0600
PS2701A-1
PS2701A-1-F3:
E72422
CAN/CSA-C22
6006Taiwan
r701a
|
|
|
310FA
Abstract: Q62702-P1673 Q62702-P874 Phototransistor 281
Text: SFH 310 SFH 310 FA SFH 310 SFH 310 FA feof6653 feof6653 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im
|
Original
|
PDF
|
feof6653
310FA
Q62702-P1673
Q62702-P874
Phototransistor 281
|
HMHA2801
Abstract: No abstract text available
Text: HMHAA280, HMHA2801 Series, HMHA281 Half Pitch Mini-Flat Package 4-Pin Optocouplers Features Description • Compact 4-pin package 2.4mm maximum standoff The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The
|
Original
|
PDF
|
HMHAA280,
HMHA2801
HMHA281
HMHA281,
HMHAA280
|
HMHA2801
Abstract: No abstract text available
Text: HMHAA280, HMHA2801 Series, HMHA281 Half Pitch Mini-Flat Package 4-Pin Optocouplers Features Description • Compact 4-pin package 2.4mm maximum standoff The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The
|
Original
|
PDF
|
HMHAA280,
HMHA2801
HMHA281
HMHA281,
HMHAA280
|
HMHA2801
Abstract: HMHA281 HMHAA280 HMHA2801A HMHA2801B HMHA2801C
Text: HMHAA280, HMHA2801 Series, HMHA281 Half Pitch Mini-Flat Package 4-Pin Optocouplers Features Description • Compact 4-pin package 2.4mm maximum standoff The HMHA281, HMHA2801 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The
|
Original
|
PDF
|
HMHAA280,
HMHA2801
HMHA281
HMHA281,
HMHA2801:
HMHA2801A:
HMHA2801B:
HMHA2801C:
HMHA281:
HMHA281
HMHAA280
HMHA2801A
HMHA2801B
HMHA2801C
|
Untitled
Abstract: No abstract text available
Text: OKI electronic components T34_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T34 silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed metal can package.
|
OCR Scan
|
PDF
|
2424D
72424D
72M2MG
b72424Ã
|
SPS-181C
Abstract: SPS-189C SPS-235C SPS-281C SPS-289C SPS-135C SPS289 sps28 SPS2 S-181C
Text: Phototransistor Phototransistor typical characteristics 7 * S •Bs B P ow er dissipation ï - v £<f c * 9 # * * S t o • Â # îfiia f to < M ^ È t o Fig. 2,3) - ^ Y ÿ 'y 'J 7 ^ n u \ y s s v > iO X , V ^ 7 \ <£*)*% • Îiln l^ t É <£<9 ÏF g S ifc - J S B IiS J Îfê 'îi ( P c -T a )
|
OCR Scan
|
PDF
|
700nmi
SPS-181C
\SPS-189C,
SPS-1118Cj
SPS-1118C
Si02ll
SPS-D35C
SPS-D81C
SPS-D89C
SPS-1118C
SPS-181C
SPS-189C
SPS-235C
SPS-281C
SPS-289C
SPS-135C
SPS289
sps28
SPS2
S-181C
|
Phototransistor 281
Abstract: IC 2 5/clarostat
Text: R-280/281 Series CLAROSTAT Reflective Optical Switches SBflORS AND CONTROLS QRCXP Absolute Maximum Ratings TA = 25°C unless otherwise stated. Features discrete terminals or wire leads11) phototransistor output (H-280) photodarlington output (R-281) two sensitivity ranges (each sensor)
|
OCR Scan
|
PDF
|
R-280/281
leads11
H-280)
R-281)
Phototransistor 281
IC 2 5/clarostat
|
S79 diode
Abstract: NCR100
Text: IL352 SIEMENS PHOTOTRANSISTOR OPTOCOUPLER Preliminary Data Sheet Package Dimensions in Inches Pins 6&7 .224 5.7 .346 (S.79) 216(5.5) -326(8.3) • Pin On ID y DESCRIPTION Maximum Ratings Emitter Reverse Voltage. 6 V
|
OCR Scan
|
PDF
|
IL352
IL352
S79 diode
NCR100
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components T34_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T34 silicon phototransistor makes it a highly sensitive photo detector. High reliability is ensured by a hermetically sealed metal can package.
|
OCR Scan
|
PDF
|
2000LX
OLD122
-50mA
RL-100«
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA MaBe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm
|
OCR Scan
|
PDF
|
sensitivitySFH310FA
|