Infrared Phototransistor
Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
Text: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213C/QSE214C
QSE213C/QSE214C
QEE213
Infrared Phototransistor
"infrared phototransistor"
all datasheet phototransistor
QEE213
QSE213C
QSE214C
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Infrared Phototransistor
Abstract: QEE213 QSE213 QSE214
Text: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213/QSE214
QSE213/QSE214
QEE213
Infrared Phototransistor
QEE213
QSE213
QSE214
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Untitled
Abstract: No abstract text available
Text: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor
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QSB363
QSB363GR
QSB363YR
QSB363ZR
QEB363
QEB373
QSB363
QSB363GR
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QEB363
Abstract: No abstract text available
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363
QSB363
QEB363
QEB373
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Infrared Phototransistor
Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°
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QSB363
QSB363
QEB363
QEB373
Infrared Phototransistor
c 5802
7402 ic configuration
QEB373
IC 7402
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR Part Number: L-3DP3BT Description Features z Mechanically and spectrally matched to the infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z Blue transparent lens. z Daylight filter. z RoHS compliant. Package Dimensions
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DSAC5792
JAN/23/2014
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Infrared Phototransistor
Abstract: "infrared phototransistor" qed12x QED22X
Text: QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. ■ Package Type: T-1 3/4 ■ Matched Emitter: QED12X/QED22X/QED23X
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QSD122,
QSD123,
QSD124
QED12X/QED22X/QED23X
QSD122/123/124
Infrared Phototransistor
"infrared phototransistor"
qed12x
QED22X
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QRB1113
Abstract: QRB1114 Photo interrupter application notes
Text: QRB1113/1114 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS FEATURES • No contact surface sensing 0.420 10.67 • Phototransistor output 0.328 (8.33) • Focused for sensing specular reflection 0.150 (3.81) NOM PIN 1 • Daylight filter on photosensor
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QRB1113/1114
DS300350
QRB1113
QRB1114
Photo interrupter application notes
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near IR sensors with daylight filter
Abstract: No abstract text available
Text: TEST2600 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp=950nm .
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TEST2600
TEST2600
950nm)
TSSS2600
D-74025
26-Jun-03
near IR sensors with daylight filter
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near IR sensors with daylight filter
Abstract: TEST2600 TSSS2600
Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .
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TEST2600
TEST2600
TSSS2600
2002/95/EC
2002/96/EC
08-Apr-05
near IR sensors with daylight filter
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near IR sensors with daylight filter
Abstract: No abstract text available
Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .
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TEST2600
TEST2600
TSSS2600
2002/95/EC
2002/96/EC
25ake
D-74025
08-Mar-05
near IR sensors with daylight filter
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Untitled
Abstract: No abstract text available
Text: TEST2600 Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .
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TEST2600
TEST2600
TSSS2600
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 303 SFH 303 FA 9.0 8.2 B C E 11.5 10.9 0.6 0.4 6.9 0.7 0.4 7.8 7.5 25.2
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GEO06351
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8239
Abstract: Diode IR 8294 Telefunken Phototransistor TEMT1000
Text: TEMT1000 Vishay Telefunken Silicon NPN Phototransistor Description TEMT1000 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in SMT package with dome lens. Due to its integrated Daylight filter the device is sensitive for IR radiation only.
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TEMT1000
TEMT1000
D-74025
17-Feb-00
8239
Diode IR 8294
Telefunken Phototransistor
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near IR sensors with daylight filter
Abstract: No abstract text available
Text: TEST2600 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in miniature side view plastic package with cylindrical lens. The integrated Daylight filter is matched to IR emitters, λp = 950 nm .
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TEST2600
TEST2600
TSSS2600
D-74025
07-Apr-04
near IR sensors with daylight filter
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QSB363
Abstract: QEB363 QEB373 "infrared phototransistor"
Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package
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QSB363
QEB363
QEB373
QSB363
QEB373
"infrared phototransistor"
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npn phototransistor sfh 309
Abstract: SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174
Text: SFH 309 SFH 309 F NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
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IPCE/IPCE25o
npn phototransistor sfh 309
SFH 256
diode p1000
Fototransistor
fototransistor led
P1000 diode
Q62702-P999
transistor 309
Q62702-P1000
Q62702-P174
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WPTS-520D
Abstract: uv phototransistor C 520D 520D c 5802 transistor
Text: Photo Transistor Waitrony Module No.: WPTS-520D 1. General Description: The WPTS-520D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor
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WPTS-520D
WPTS-520D
uv phototransistor
C 520D
520D
c 5802 transistor
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c 5802 transistor
Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Text: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor
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WPTS-510D
WPTS-510D
c 5802 transistor
IAO5
Waitrony IE-2
Rise time of photo transistor
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sfh siemens
Abstract: npn phototransistor sfh 309 380nm SFH 309
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position
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PCE25°
sfh siemens
npn phototransistor sfh 309
380nm
SFH 309
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phototransistor 600 nm
Abstract: 305d WPTS-305D Waitrony
Text: Waitrony Photo Transistor Module No.: WPTS-305D 1. General Description: Dimensions The WPTS-305D is a high sensitivity NPN silicon phototransistor mounted in a compact black epoxy encapsulation. With daylight filter, this phototransistor is only sensitive to
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WPTS-305D
WPTS-305D
phototransistor 600 nm
305d
Waitrony
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLED Package Dimensions in Inches mm FEATURES Maximum Ratings * NPN Silicon Phototransistor Operating & Storage Temperature Hop, Tstg) . -5 5 to +100°C Collector-Emitter Voltage (VCE) . 35 V
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SFH320
SFH320F
ty-SFH320
FH320F
SFH320/F
023b35b
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f41 marking
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter SFH 303 SFH 303 F Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH320 SFH320F DAYLIGHT FILTER NPN Silicon Phototransistor SMT-TOPLËD FEATURES • NPN Silicon Phototransistor • Daylight Filter C>ption-SFH320F • Suitable for Vapor-Phase Reflow, Infrared Reflow, Wave Solder Processes • Compatible with Automatic Placement
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SFH320
SFH320F
ption-SFH320F
SFH420-SMTIRED
itivity-SFH320
sentitivlty-SFH320F
SFH320/F
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