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    PIN PHOTODIODE CHIP 850NM Search Results

    PIN PHOTODIODE CHIP 850NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    PIN PHOTODIODE CHIP 850NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VFIR

    Abstract: PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm SD150-14-006 VCSEL die bonding PIN photodiode chip 850nm
    Text: SD150-14-006 16/32Mbps Si PIN Photodiode Chip The SD150-14-006 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at


    Original     		PDF SD150-14-006 16/32Mbps SD150-14-006 16Mbps 32Mbps VFIR PIN photodiode 850nm PIN photodiode chip 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm Fiber-optic PIN photodiode A/W 850nm VCSEL die bonding PIN photodiode chip 850nm

    SI 13003

    Abstract: X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm SD150-13-003 VCSEL die bonding 850nm photodiode
    Text: SD150-13-003 4 Mbps Si PIN Photodiode Chip The SD150-13-003 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at


    Original     		PDF SD150-13-003 SD150-13-003 SI 13003 X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm VCSEL die bonding 850nm photodiode

    Untitled

    Abstract: No abstract text available
    Text: TPD-1C12-000 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		PDF TPD-1C12-000 1300nm 850nm 1E-10 1E-11 1E-12 1E-13 350x350

    pin InGaAs chip

    Abstract: pin 1300nm
    Text: TPD-1C12-002 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		PDF TPD-1C12-002 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 pin InGaAs chip pin 1300nm

    1E13

    Abstract: TPD-1C12-011
    Text: TPD-1C12-011 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		PDF TPD-1C12-011 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 1E13 TPD-1C12-011

    PIN 1300nm

    Abstract: TPD-1C12-001 1E13 InGaas PIN photodiode chip
    Text: TPD-1C12-001 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		PDF TPD-1C12-001 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 PIN 1300nm TPD-1C12-001 1E13 InGaas PIN photodiode chip

    Untitled

    Abstract: No abstract text available
    Text: TPD-1C12-013 InGaAs PIN photodiode chip FEATURES: • Optimized for monitor application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Fig. 1 R ID VBD C


    Original     		PDF TPD-1C12-013 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 500x500

    InGaas PIN photodiode chip

    Abstract: PIN photodiode chip 850nm PIN photodiode chip
    Text: TPD-1C12-006 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 R VBD C MIN TYP MAX UNIT TEST CONDITIONS


    Original     		PDF TPD-1C12-006 1300nm 850nm 1300nm 1E-10 1E-11 InGaas PIN photodiode chip PIN photodiode chip 850nm PIN photodiode chip

    GaAs-PIN-Photodiode

    Abstract: PIN photodiode chip 850nm
    Text: TPD-8D12-002 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 0.2 Responsivity Dark Current Breakdown Voltage


    Original     		PDF TPD-8D12-002 850nm 0x10-6 1E-10 1E-11 1E-12 GaAs-PIN-Photodiode PIN photodiode chip 850nm

    InGaas PIN photodiode chip

    Abstract: TPD-1C12-007 InGaas PIN photodiode, 3mm
    Text: TPD-1C12-007 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 MIN R VBD C Typical Dark Current and Forward Current


    Original     		PDF TPD-1C12-007 1300nm 850nm 1E-10 1E-11 47mmx3 InGaas PIN photodiode chip TPD-1C12-007 InGaas PIN photodiode, 3mm

    TPD-8D12-001

    Abstract: No abstract text available
    Text: TPD-8D12-001 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 1.0 9.0 0.6 0.8 Responsivity 1 Dark Current


    Original     		PDF TPD-8D12-001 850nm 1E-10 1E-11 1E-12 TPD-8D12-001

    PIN photodiode 850nm

    Abstract: PIN photodiode chip 850nm
    Text: TPD-8D12 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS R IF ID VBD C 0.55 100 0.6 0.63 0.2 85 0.7


    Original     		PDF TPD-8D12 850nm 850nm 1E-10 1E-11 1E-12 1E-13 PIN photodiode 850nm PIN photodiode chip 850nm

    TPA-8D12-001

    Abstract: No abstract text available
    Text: TPA-8D12-001 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 1.0 9.0 0.6 0.8 Responsivity 1 Dark Current


    Original     		PDF TPA-8D12-001 850nm 1E-10 1E-11 1E-12 TPA-8D12-001

    PIN photodiode 850nm

    Abstract: No abstract text available
    Text: TPD-8D12-000 GaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL MIN TYP R ID VBD C BW 0.50 0.55 0.2 2 0.9 1.1 Responsivity Dark Current


    Original     		PDF TPD-8D12-000 850nm 0x10-4 850nm 1E-10 1E-11 1E-12 PIN photodiode 850nm

    InGaas PIN photodiode, 1550 NEP

    Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
    Text: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High


    Original     		PDF 850nm 1700nm. InGaAs-1000-4) InGaAs-3000-4) 1550nm InGaas PIN photodiode, 1550 NEP quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm

    Untitled

    Abstract: No abstract text available
    Text: InnovativeInnov Innovative VCSEL Solutions . Delivered Advanced Optical Components 850nm Single Mode VCSEL TO-46 Package HFE4093-332 Key Features: • • • • • • Designed for drive currents between 1 and 5 mA Optimized for low dependence of electrical properties over temperature


    Original     		PDF 850nm HFE4093-332 HFE409x-332 1-866-MY-VCSEL 1-866-MY-VCSEL

    MAX3266

    Abstract: MAX3266CSA MAX3267 MAX3267CSA TO56 package TO-56 header
    Text: 19-4796; Rev 1; 6/00 KIT ATION EVALU E L B AVAILA 1.25Gbps/2.5Gbps, +3V to +5.5V, Low-Noise Transimpedance Preamplifiers for LANs The 1.25Gbps MAX3266 has a typical optical dynamic range of -24dBm to 0dBm in a shortwave 850nm configuration or -27dBm to -3dBm in a longwave


    Original     		PDF 25Gbps/2 25Gbps MAX3266 -24dBm 850nm) -27dBm 1300nm) MAX3267 -21dBm MAX3266CSA MAX3267CSA TO56 package TO-56 header

    Untitled

    Abstract: No abstract text available
    Text: 19-4796; Rev 1; 6/00 KIT ATION EVALU E L B AVAILA 1.25Gbps/2.5Gbps, +3V to +5.5V, Low-Noise Transimpedance Preamplifiers for LANs The 1.25Gbps MAX3266 has a typical optical dynamic range of -24dBm to 0dBm in a shortwave 850nm configuration or -27dBm to -3dBm in a longwave


    Original     		PDF 25Gbps/2 MAX3266 25Gbps 200nA 920MHz MAX3267 500nA MAX3266/MAX3267

    FID08T13TX

    Abstract: 08T13TX photodiode 850nm PIN photodiode 10 nm
    Text: FID 08T13TX SILICON UN PHOTOnOK DESCRIPTION The FID08T13TX is a Si-PIN photodiode designed for use in optical local area network LAN system and optical data link system at 0.8jum wavelength region. A photodiode chip having 1000/xm 1mm diameter of photosensitive


    OCR Scan     		PDF 08T13TX FID08T13TX 300MHz, 374T75b FD08T13TX 08T13TX photodiode 850nm PIN photodiode 10 nm

    siemens 30 090

    Abstract: No abstract text available
    Text: SIEMENS Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 7771— Ip ] Approx. BPW 34 BPW 34 S Photosensitive area 2.65 mm x 2.65 mm weight 0.1 g geoo6643 1 .1 i Chip posit O i r i .9 Ò .0 .1 CO I r f ’ «Ni-'-: i t n hf 6.7 R O


    OCR Scan     		PDF geoo6643 GE006863 siemens 30 090

    Untitled

    Abstract: No abstract text available
    Text: SFH216 Silicon PIN Photodiode Dimensions in inches mm .291 (7.4) .259 (6.6) .571 ( 14.51 . 492 ( 12.5) 0.100 2.54) ,208 (S.3\ .197 (5.0) rs ' _L ( Cathode A .018 (0.45) .106 T 0.189(4.8) e n 81 (4.6) Glass Lens (2.7) Chip Location .220 ( 5.6), .208 (5.3)


    OCR Scan     		PDF SFH216 GE006314 x10-14 850nm

    0829

    Abstract: No abstract text available
    Text: Si PIN Photodiode S623Ô PRELIMINARY DATA Sep.1995 High reliability temperature , Surface mountable package FEATURES •S to ra g e temperature : -40 to +125°C Operating temperature : -40 to +100°C • H ig h sensitivity (0.72A / W at 960nm) •S u rfa c e mountable chip carrier package


    OCR Scan     		PDF 960nm) S-164-40 KPiN1020E01 0829

    AX65-R2F

    Abstract: PIN photodiode sensitivity 850nm photodiode chip silicon
    Text: CENTRONIC LTD 45E J> m s ia ? □□□□□at, Ultra High Speed Photodiodes 3 metui AX65-R2F The AX65-R2F is a high quality low cost silicon photodiode specially designed for fiber optic applications operating in the 850nm range. Frequency response of 100 MHz can be attained


    OCR Scan     		PDF AX65-R2F AX65-R2F 850nm 900nm 900nm 50ohms PIN photodiode sensitivity 850nm photodiode chip silicon

    Untitled

    Abstract: No abstract text available
    Text: CENTRONIC LTD 45E D m sia? 3 Ultra High Speed Photodiodes mczm t^ H S " AX65-R2F The AX65-R2F is a high quality low cost silicon photodiode specially designed for fiber optic applications operating in the 850nm range. Frequency response of 100 MHz can be attained


    OCR Scan     		PDF AX65-R2F AX65-R2F 850nm 400nm 10OOnm 900nm 50ohms