TGS4304
Abstract: No abstract text available
Text: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed
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TGS4304
TGS4304
33dBm
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Untitled
Abstract: No abstract text available
Text: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed
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TGS4304
TGS4304
33dBm
30ming
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MMIC SWITCH
Abstract: RTPA5250-130
Text: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information
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RTPA5250-130
RTPA5250-130
MMIC SWITCH
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IC 994
Abstract: TGS4304
Text: Advance Product Information September 26, 2005 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw
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TGS4304
TGS4304
33dBm
IC 994
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S3330
Abstract: TGS4304
Text: Advance Product Information February 14, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw
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TGS4304
TGS4304
33dBm
TGS4304wer
S3330
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AP640R2-00
Abstract: Ka-band TGS4302 DSA00265953
Text: Advance Product Information February 6, 2006 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss
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TGS4302
AP640R2-00
Ka-band
TGS4302
DSA00265953
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 15, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss
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TGS4302
TGS4302
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Untitled
Abstract: No abstract text available
Text: May 2, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed
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TGS4302
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TGS4302
Abstract: 10S21
Text: May 2, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed
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TGS4302
TGS43ns.
TGS4302
10S21
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4 digit dot matrix display
Abstract: color decoder TRANSISTOR dual infrared transistor njm2063 infrared receiver led infrared remote switch NJM4556 NJU9202B NJM2065A Infrared receiver module
Text: DISCONTINUE PRODUCTS TABLE 1 TYPE No. NJM NJM1372A NJM2048 NJM2049 NJM2063 NJM2063A NJM2065 NJM2065A NJM2066 NJM2067 NJM2075A NJM2097 NJM2104F NJM2105 NJM2106 NJM2127 NJM2151 NJM2160 NJM2171 NJM2175 NJM2185 NJM2203 NJM2204B NJM2208 NJM2219 NJM2220 NJM2225A
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NJM1372A
NJM2048
NJM2049
NJM2063
NJM2063A
NJM2065
NJM2065A
NJM2066
NJM2067
NJM2075A
4 digit dot matrix display
color decoder TRANSISTOR
dual infrared transistor
njm2063
infrared receiver led
infrared remote switch
NJM4556
NJU9202B
NJM2065A
Infrared receiver module
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RFID 5.8Ghz
Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION FEBRUARY 2000 Wireless Symposium 2000 is Stage for New Product Introductions Wireless Symposium/Portable by Design 2000 held in San Jose, CA February 2125 marked the introduction of 16 new MMIC products, covering DC-40 GHz,
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DC-40
HMC280MS8G
HMC189MS8
RFID 5.8Ghz
HMC264CB1
HMC265CB1
HMC266
HMC292
HMC294
hittite CMOS 1999
MICROWAVE ASSOCIATES RF SPDT switch
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univision technology
Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION JUNE 1999 Ball Grid Array SMT mmWave Products INSIDE. *12 NEW PRODUCTS RELEASED! Designers of millimeter and microwave radios now have access to advanced MMICs in a rugged SMT packaged format. Hittite Microwave has
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HMC258CB1
HMC264CB1
HMC265CB1
univision technology
Ka-Band MMIC Mixer
MICROWAVE ASSOCIATES RF SPDT switch
Microwave power GaAs FET data
HMC220MS8
ka-band mixer
HMC143
HMC259
HMC264CB1
HMC267QS16G
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30GHz diode
Abstract: AP640R2-00 TGS4302-EPU
Text: Advance Product Information May 11, 2004 High Power Ka-Band SPDT Switch TGS4302-EPU Key Features and Performance • • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss
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TGS4302-EPU
AP640R2-00
30GHz diode
TGS4302-EPU
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mmds down converter
Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
Text: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION AUTUMN 2001 1 Watt and 0.5 Watt Power Amplifiers at 1.9 GHz, 2.4 GHz, 3.5 GHz and 5.8 GHz Now Available! New High Efficiency MMIC GaAs InGaP HBT Designs for +3V and +5V Platforms Hittite is expanding its GaAs InGaP HBT product line by adding eight new power
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OC-48
OC-192
mmds down converter
HMC394LP4
Crystal Radio
MMIC Downconverter ku band
HMC409
c-Band mmic core chip
ku vsat "buffer amplifier"
HMC394
HMC406MS8G
HMC407MS8G
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Untitled
Abstract: No abstract text available
Text: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features • Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads
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MASW-010646
MASW-010646
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3g signal Booster
Abstract: HMC439QS16G HMC245QS16 W. Howard Associates gsm Booster GSM/ 3G booster HMC444LP4 Lambda Sensor hmc439 HMC311LP3
Text: WINTER 2003 OFF-THE-SHELF NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. * 15 NEW PRODUCTS RELEASED! * High IP3 Amplifiers, Pg 2 * SP3T Switches and Digital Attenuators, Pg 3 * High Isolation CATV Switch, Pg 4 * Medium Power Amp, Pg 4 * Active Multiplier Family, Pg 5
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36dBm
OC-48
OC-192
3g signal Booster
HMC439QS16G
HMC245QS16
W. Howard Associates
gsm Booster
GSM/ 3G booster
HMC444LP4
Lambda Sensor
hmc439
HMC311LP3
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Untitled
Abstract: No abstract text available
Text: SONY CXG1039TN High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic Description 10 pin TSSOP Plastic The CXG 1039TN is a high isolation absorptive SPDT (Single Pole Dual Throw) switch MMIC used in PCS handsets. This IC is designed using the Sony’s GaAs J-FET
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CXG1039TN
1039TN
10PIN
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Untitled
Abstract: No abstract text available
Text: SONY CXG1045N High Power DPDT Switch for GSM Description The CXG1045N is a DPDT Dual Pole Dual Throw antenna switch MMIC used in personal communication 8 pin SSOP (Plastic) handsets such as GSM, GSM1800 or dualband. This IC is designed using the Sony's GaAs J-FET process.
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CXG1045N
GSM1800
CXG1045N
900MHz
38dBm
37dBm
GSM900
GSM900/GSM1800
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Untitled
Abstract: No abstract text available
Text: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha AP640R2-00 Features Chip Outline • Broad Bandwidth, 26-40 GHz ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm Peak, 33 dBm CW
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AP640R2-00
8/98A
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AP640R2-00
Abstract: gaas spdt switch ka band mmic pin switch mmic ka T1820
Text: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha A P 640R 2-00 Chip Outline Features • Broad Bandwidth, 26-40 GHz o ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm
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AP640R2-00
8/98A
gaas spdt switch
ka band mmic
pin switch mmic ka
T1820
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AP640R2-00
Abstract: No abstract text available
Text: GaAs MMIC SPDT PIN Switch 26-40 GHz Reflective AP640R2-00 Features • Broad Bandwidth, 26 - 40 GHz ■ Low Loss, < 1.1 dB ■ High Isolation, > 28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 25 mA Total at -5V ■ High Power Handling Capability, 37 dBm Peak,
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AP640R2-00
AP640R2-00
35GHz
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Signal Path Designer
Abstract: PIN diode switch 3a "pin diode" DS025 DS0602
Text: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez, CA After the system design has been blocked out, after the individual component specifications to achieve the overall system’s performance have been identified, the crucial moment arrives.actual components selection! Amplifiers, filters, mixers and
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DS0352
DS0602
DS0842
DS0252
DS0052
DS0602
100C1003
DS0800
DS0842
Signal Path Designer
PIN diode switch
3a "pin diode"
DS025
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S0800
Abstract: No abstract text available
Text: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez , C'A A fte r the system design has been blocked out, a fte r the individual com ponent specifications to achieve the overall system ’s performance have been identified, the crucial mom ent arrives.actual components selection! Amplifiers, filters,
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DS0252
DS0052
DS0602
100C1003
DS0800
DS0842
S0800
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GaAs MESFET
Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .
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DC-18
MA01801
GaAs MESFET
SPDT FETs
MMIC
ALPHA spdt Switch
GaAs MESFET amplifier
GHz Power FET
GaAs MMIC SPDT Switch
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