Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.1 DATA SHEET EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
|
Original
|
EDC1UV641
168-pins,
MB81V1
1Mx16
MP-DRAMM-DS-20391-11/96
|
PDF
|
PJ 43 gs 1m
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet EDC1UV641 1/4 B-60(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
Original
|
EDC1UV641
168-pin,
MB81V1
165B-60
1Mx16
PJ 43 gs 1m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
|
Original
|
EDC1UV641
168-pins,
MB81V1
1Mx16
MP-DRAMM-DS-20391-9/96
|
PDF
|
2MX16
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.
|
Original
|
EDC2UV7282B-
16MByte
EDC2UV7282B-60
16-megabyte
168-pin,
MB81V17805B-60
2MX16
|
PDF
|
edo dram 50ns 72-pin simm
Abstract: Fujitsu DRAM
Text: July 1997 Revision 1.0 data sheet EDC4UV6482B-60 J/T G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
Original
|
EDC4UV6482B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
edo dram 50ns 72-pin simm
Fujitsu DRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet EDC2UV6482B-60 J/T G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
Original
|
EDC2UV6482B-60
16MByte
16-megabyte
168-pin,
MB81V17805B-60
|
PDF
|
EDC2UV641
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EDC2UV641 1/4 -(60/70)(J/T)G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
|
Original
|
EDC2UV641
16MByte
16-megabyte
168-pins,
MB81V1
1Mx16
16MByom
MP-DRAMM-DS-20390-9/96
|
PDF
|
mark edo
Abstract: 74ABT16244
Text: July 1997 Revision 1.0 data sheet EDC4BV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
|
Original
|
EDC4BV7282B-60
32MByte
32-megabyte
168-pins,
MB81V17805B-60
74ABT16244
mark edo
|
PDF
|
pj 72 diode
Abstract: 4Mx8 dram simm
Text: July 1997 Revision 1.0 data sheet EDC8UV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC8UV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module organized as 8M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.
|
Original
|
EDC8UV724
64MByte
64-megabyte
168-pin,
MB81V1
405B-60
pj 72 diode
4Mx8 dram simm
|
PDF
|
74LVT16244
Abstract: fujitsu 42 pds
Text: July 1997 Revision 1.0 data sheet EDC8BV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module organized as 8M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
|
Original
|
EDC8BV724
64MByte
64-megabyte
168-pins,
MB81V1
405B-60
74LVT16244
fujitsu 42 pds
|
PDF
|
1Mx4 EDO RAM
Abstract: edo dram 50ns 72-pin simm edo dram 72-pin simm 4 m 2MX16
Text: July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.
|
Original
|
EDC4UV7282B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
1Mx4 EDO RAM
edo dram 50ns 72-pin simm
edo dram 72-pin simm 4 m
2MX16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP IITSU July 1997 Revision 1.0 data sheet EDC1UV641 1/4 B-60(J/T)G-S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641 (1/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga nized as 1M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
OCR Scan
|
EDC1UV641(
1Mx64)
EDC1UV641
168-pin,
MB81V1
165B-60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.1 FUJITSU D A T A S H E E T - EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G -S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module
|
OCR Scan
|
EDC1UV641
168-pins,
MB81V1
1Mx16
168-pin
12QforTSOP
|
PDF
|
alu 74381
Abstract: 74381 alu alu 74382 74381 74382 CI 74382 CI 74381 bt 1690 4435bs ZR37381-65
Text: Z 'iiR A N ADVANCE INFORMATION _ZR37381 CASCADABLE 16-BIT ARITHMETIC/LOGIC UNIT FEATURES • ■ ■ ■ High-speed 16-bit, 8-function ALU Superset combination of four 74381 /382-type 4-bit ALUs Input and output registers for pipelined operation can be
|
OCR Scan
|
ZR37381
16-BIT
16-bit,
/382-type
L4C381
DS37381-0489-5K
alu 74381
74381 alu
alu 74382
74381
74382 CI
74382
CI 74381
bt 1690
4435bs
ZR37381-65
|
PDF
|
|
|
C2U SOT-89
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SH EET - EDC2UV641 1 /4 -(60/70)(J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV641 (1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module
|
OCR Scan
|
EDC2UV641
16MByte
16-megabyte
168-pins,
MB81V1
1Mx16
C2U SOT-89
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4B V7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC4BV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized
|
OCR Scan
|
V7282B-60
32MByte
EDC4BV7282B-60
32-megabyte
168-pins,
V17805B-60
74ABT16244
72-pin
144-pin
168-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
|
OCR Scan
|
EDC2UV7282B-
16MByte
EDC2UV7282B-60
16-megabyte
168-pin,
MB81V17805B-60
72-pin
144-pin
168-pin
200-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV6482B-60 J/T G-S 16MByte (2M x 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
OCR Scan
|
EDC2UV6482B-60
16MByte
16-megabyte
168-pin,
MB81V17805B-60
16MByte
72-pin
144-pin
168-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV6482B-60 J/T G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
|
OCR Scan
|
EDC4UV6482B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
32MByte
72-pin
144-pin
168-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8UV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC8UV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga
|
OCR Scan
|
EDC8UV724
64MByte
64-megabyte
168-pin,
MB81V1
405B-60
1Mx16,
|
PDF
|
fujitsu power supply
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8B V724 2I4 B-60(JIT)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga
|
OCR Scan
|
64MByte
EDC8BV724
64-megabyte
168-pins,
MB81V1
405B-60
74LVT16244
fujitsu power supply
|
PDF
|
Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized
|
OCR Scan
|
EDC4UV7282B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
72-pin
144-pin
168-pin
200-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: November 1996 Revision 1.1 D A T A S H E E T FUJITSU - EDC2UV641 1/4 -(60/70)(J/T)G-S 16MByte (2M x64) CMOS EDO DRAM Module - 3.3V General Description The EDC 2UV641(1/4)-(60/70)(J/T)G -S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module
|
OCR Scan
|
EDC2UV641
16MByte
2UV641
16-megabyte
168-pins,
MB81V1
1Mx16
128AS*
168-pin
374T75b
|
PDF
|
IC 3-8 decoder 74138 pin diagram
Abstract: binary to gray code conversion using ic 74157 Multiplexer IC 74151 16 bit odd even parity checker using two IC 74180 binary to gray code conversion using ic 74139 7444 series Excess-3-gray code to Decimal decoder full adder using Multiplexer IC 74151 ic 74151 ic 74148 block diagram MSI IC 74138 decoder
Text: s I SEMICONDUCTOR GROUP 23E D • t?54E40 G00fl535 1 "T-q2-q \ p a rtII CMOS STANDARD CELL LSI MSM91H000 SERIES ¿U S' This M a terial C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r O K I SEMICONDUCTOR GROUP 23E D ■ b72M240 DGGÔ23b G
|
OCR Scan
|
MSM91H000
b72MS40
DQQ023b
t-42-41
b724240
IC 3-8 decoder 74138 pin diagram
binary to gray code conversion using ic 74157
Multiplexer IC 74151
16 bit odd even parity checker using two IC 74180
binary to gray code conversion using ic 74139
7444 series Excess-3-gray code to Decimal decoder
full adder using Multiplexer IC 74151
ic 74151
ic 74148 block diagram
MSI IC 74138 decoder
|
PDF
|