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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat  2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M	Original	IXBV22N300S IC110 PLUS220SMDHV 100ms 22N300 3-10-14-A	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat  2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M

Original

IXBV22N300S IC110 PLUS220SMDHV 100ms 22N300 3-10-14-A

PDF