HN4A06J
Abstract: No abstract text available
Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN4A06J
-120V
HN4A06J
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HN4A51J
Abstract: No abstract text available
Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN4A51J
-120V
HN4A51J
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HN4A06J
Abstract: No abstract text available
Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN4A06J
-120V
HN4A06J
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Untitled
Abstract: No abstract text available
Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN4A51J
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Untitled
Abstract: No abstract text available
Text: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN4A06J
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HN4A51J
Abstract: No abstract text available
Text: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN4A51J
-120V
HN4A51J
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HN3A51F
Abstract: No abstract text available
Text: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
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HN3A51F
-120V
HN3A51F
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PNP Transistors
Abstract: No abstract text available
Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation
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40362L
40362L
O-205AD/TO-39
07-Sep-2010
PNP Transistors
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2SA1049
Abstract: 2SC2459
Text: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
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2SA1049
2SC2459.
2SA1049
2SC2459
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2SA1048
Abstract: 2SC2458 2sa1048 transistor
Text: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
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2SA1048
2SC2458
2SA1048
2SC2458
2sa1048 transistor
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2SA21
Abstract: 2SA2154 2SC6026
Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026
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2SA2154
2SC6026
2SA21
2SA2154
2SC6026
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toshiba ic-700
Abstract: HN4B06J
Text: HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity
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HN4B06J
-120V
toshiba ic-700
HN4B06J
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KTA1517
Abstract: KTC3911S
Text: SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700.
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KTA1517
-120V.
KTC3911S.
KTA1517
KTC3911S
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HN4B06J
Abstract: No abstract text available
Text: HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity
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-120V
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kta1504s
Abstract: transistor KTA1504S
Text: SEMICONDUCTOR KTA1504S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3875S.
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KTC3875S.
KTA1504S
Transiti-55150
-100mA,
-10mA
kta1504s
transistor KTA1504S
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PNP Transistors
Abstract: hFE-20
Text: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575
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2N6575
2N6575
O-204AA/TO-3
07-Sep-2010
PNP Transistors
hFE-20
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2SA1300L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)
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2SA1300
-50mA)
OT-89
2SA1300L-xx-AB3-R
2SA1300G-xx-AB3-R
2SA1300L-xx-T92-B
2SA1300G-xx-T92-B
2SA1300L-xx-T92-K
2SA1300G-xx-T92-K
2SA1300L-xx-T92-R
2SA1300L
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTA733B TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity. : hFE IC=0.1mA /hFE(IC=2mA)=0.95(Typ.) ・Low Noise : NF=1dB(Typ.). at f=1kHz ・Complementary to KTC945B.
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KTC945B.
KTA733B
-100mA,
-10mA
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A1242
Abstract: 2SA1242 transistor A1242
Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)
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2SA1242
A1242
2SA1242
transistor A1242
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Untitled
Abstract: No abstract text available
Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)
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2SA1242
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Untitled
Abstract: No abstract text available
Text: FJX992 PNP Audio Frequency Low Noise Amplifier Features • • • High Voltage : VCEO = -120V Excellent hFE Linearity : hFE = 200~700 High hFE 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Symbol Ta = 25°C unless otherwise noted
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FJX992
-120V
OT-323
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Untitled
Abstract: No abstract text available
Text: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.)
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2SA1163
2SC2713
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KTC3198A
Abstract: ktc31 KTA1266A transistor
Text: SEMICONDUCTOR KTA1266A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz.
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KTA1266A
-150mA
KTC3198A.
KTC3198A
ktc31
KTA1266A transistor
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2SA1587
Abstract: 2SC4117
Text: 2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) •
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2SA1587
2SC4117
2SA1587
2SC4117
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