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    PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Search Results

    PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., FZT955 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps


    Original     		FZT955 OT-223 FZT955L FZT955-AA3-R FZT955L-AA3-R OT-223 QW-R207-010 PDF

    LB-210

    Abstract: 1000C FZT955 FZT956 DSA003718
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT ~1 HIGH PERFORMANCE TRANSISTORS ~ ISSUE 2- OCTOBER 1995 FEATURES ● 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages ● Excellent gain characteristics PARTMARKING DETAILS - COMPLEMENTARY


    Original     		OT223 Fi7955 Fi7855 FZT956 FZT955 FZT956 SYM80L 1000C u0001 LB-210 1000C FZT955 DSA003718 PDF

    BF979

    Abstract: No abstract text available
    Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		BF979 BF979 D-74025 20-Jan-99 PDF

    BF979

    Abstract: No abstract text available
    Text: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		BF979 BF979 D-74025 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		BF979 BF979 30ake D-74025 20-Jan-99 PDF

    FZT857

    Abstract: FZT957 FZT958 DSA003675
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


    Original     		OT223 FZT957 FZT958 FZT957 FZT857 FZT958 -100mA, 50MHz FZT857 DSA003675 PDF

    FZT855

    Abstract: FZT956 FZT955
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C


    Original     		OT223 FZT955 FZT956 FZT955 FZT855 FZT956 -100mA -10mA* FZT855 PDF

    FZT855

    Abstract: FZT955 FZT956 DSA003675
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 2 – OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C


    Original     		OT223 FZT955 FZT956 FZT955 FZT855 FZT956 -100mA -10mA* FZT855 DSA003675 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.


    Original     		BF979 BF970 D-74025 20-Aug-04 PDF

    FZT951

    Abstract: FZT953 fzt853 FZT851 DSA003718
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 fzt853 FZT851 DSA003718 PDF

    FZT953

    Abstract: FZT853 FZT851 FZT951
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		FZT951 FZT953 OT223 FZT951 FZT851 FZT853 FZT953 FZT853 FZT851 PDF

    A1KA

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


    Original     		OT223 FZT957 FZT958 FZT957 FZT857 FZT958 100ms A1KA PDF

    Untitled

    Abstract: No abstract text available
    Text: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps


    Original     		FZT951 FZT953 OT223 FZT951 FZT851 FZT853 PDF

    ZUMT491

    Abstract: No abstract text available
    Text: ZUMT491 SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 1 – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current IC APPLICATIONS * Ideally suited for space / weight critical applications


    Original     		ZUMT491 OT323 500mW OT323 500mA, 100mA* ZUMT491 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR ISSUE 3 – OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage


    Original     		OT223 FZT968 100ms PDF

    TO50 transistor

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component


    Original     		BF979 2002/95/EC 2002/96/EC BF970 18-Jul-08 TO50 transistor PDF

    BFX36

    Abstract: No abstract text available
    Text: BFX36 SILICON PLANAR PNP D U A L H IG H -G A IN , LOW-NOISE AM PLIFIER The BFX 36 is a six terminal device containing two isolated high-gain, low-noise, silicon planar epitaxial PNP transistors in Jedec TO-77 metal case. They are designed for use in high performance amplifier and differential amplifier circuits from 1 /UA up to 100 mA.


    OCR Scan     		BFX36 BFX36 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER FZT589 HIGH PERFORMANCE TRANSISTOR ISSUE 2 - OCTOBER 1995 - PARTMARKING DETAILS - FZT589 COM PLEMENTARY TYPES - FZT489 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE


    OCR Scan     		OT223 FZT589 FZT489 -100mA* -200mA* -500mA, FMMT549 7057fi PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FGX591 ISSUE 3 - NOVEMBER 1995_ O_ PARTMARKING DETAILCOMPLEMENTARY TYPE- P1 FCX491 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage VALUE UNIT V CBO


    OCR Scan     		FGX591 FCX491 -500mA, -100mA* -100m FMMT591 -50mA, f-100M PDF

    BFX37

    Abstract: j191 316b IC pnp silicon planar high performance transistor
    Text: BFX37 SILICON PLANAR PNP LO W -LEVEL, LOW-NOISE AM PLIFIER The BFX37 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case, designed fo r use in high performance, low -level, low -noise am plifiers over a wide frequency range. It features high current gain over the range from 1juA to 1 0 0 m A and excellent NF at lo w fre ­


    OCR Scan     		BFX37 BFX37 100mA G-316B j191 316b IC pnp silicon planar high performance transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps


    OCR Scan     		FZT955 FZT956 OT223 FZT955 FZT855 FZT956 -100mA, 50MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR FMMT589 ISSUE 5 - JANUARY 1997_ _ FEATURES * Low equivalent on-resistance; RCE sat 250m£2 at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE- 589 FMMT489 ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		FMMT489 FMMT589 -10mA* -100m -200m -500mA, -100mA, 100MHz 300us. PDF

    Untitled

    Abstract: No abstract text available
    Text: _ BF979 VIS HAY Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features • • High cross modulation performance


    OCR Scan     		BF979 BF979 20-Jan-99 BF979_ PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENTj HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995_;_ ' FEATURES * Extremely lo w equivalent on-resistance; RCHsat) * 6 Am ps continuous current * * * Up to 20 A m ps peak current Very lo w saturation voltage


    OCR Scan     		OT223 FZT948 FZT949 100SJ TJ70S7fl PDF