PNP SILICON POWER TRANSISTORS Search Results

PNP SILICON POWER TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

PNP SILICON POWER TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PNP Transistors Abstract: No abstract text available Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation	Original	40362L 40362L O-205AD/TO-39 07-Sep-2010 PNP Transistors	PDF
MJL3281A MJL1302A Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors	Original	MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors	PDF
MJL3281A MJL1302A Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors	Original	MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors	PDF
40394 Abstract: PNP Transistors MD14 Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation	Original	07-Sep-2010 40394 PNP Transistors MD14	PDF
2N5195 Abstract: No abstract text available Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP	Original	2N5191, 2N5192 2N5194 2N5195* 2N5193 2N5195	PDF
MJE15034G Abstract: No abstract text available Text: MJE15034 NPN , MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS	Original	MJE15034 MJE15035 O-220, O-220 25plicable MJE15034/D MJE15034G	PDF
2SA70 Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit	Original	2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100	PDF
2N5194 Abstract: 2N5195 2N5191 2N5192 2N5193 Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP	Original	2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5194 2N5195 2N5191 2N5192 2N5193	PDF
2N5191 Abstract: 2N5192 2N5193 2N5194 2N5195 Text: ON Semiconductort 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP	Original	2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5191 2N5192 2N5193 2N5194 2N5195	PDF
2n2955 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.	Original	2N2955 2N2955 2N2955L-T30-Y QW-R205-004	PDF
2N2955 Abstract: 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.	Original	2N2955 2N2955 2N2955L-T30-Y QW-R205-004 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP	PDF
BD241C-D Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG BD242B equivalent Text: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON	Original	BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG BD242B equivalent	PDF
BD241C-D Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG Text: BD241C NPN , BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON	Original	BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG	PDF
to126 case Abstract: Power Transistors TO-126 Case 2N5195 2N5193 2N5190 2N5194 Text: Central 2N5193 2N5194 2N5195 PNP SILICON POWER TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5193 Series types are Silicon PNP Power Transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications.	Original	2N5193 2N5194 2N5195 2N5193 2N5190 O-126 100mA to126 case Power Transistors TO-126 Case 2N5195 2N5190 2N5194	PDF

2N5191 Abstract: 2N5192 2N5193 2N5194 2N5195 T2500S Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 w *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP	Original	2N5194 2N5195* 2N5191, 2N5192 2N5194/D 2N5191 2N5192 2N5193 2N5194 2N5195 T2500S	PDF
ADC 808 Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S Text: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS	Original	BD808/D r14525 ADC 808 BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S	PDF
2N2955 Abstract: 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.	Original	2N2955 2N2955 2N2955L 2N2955-T30-K 2N2955L-T30-K QW-R205-004 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP	PDF
NTE192 Abstract: NTE192A PNP transistor 263 NTE193A NTE193 Text: NTE192 NPN & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These	Original	NTE192 NTE193 NTE192A NTE193A /NTE193 /NTE193A O92HS 1000cps NTE192 NTE192A PNP transistor 263 NTE193A NTE193	PDF
2N5037 Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi	Original	BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251	PDF
Untitled Abstract: No abstract text available Text: ftnasr Back to Bipolar Power Transistors MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP	OCR Scan	3kA/10kA/10kA	PDF
MJE105 Abstract: MJE205 MJE105K MJE205K CASE 90-05 Text: MJE105 SILICON MJE105K MEDIUM-POWER PNP SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. PNP SILICON • High DC Current Gain - hFE = 25-100 @ lc = 2.0 A	OCR Scan	MJE105 MJE105K 20-Watts MJE205, MJE205K -MJE105- MJE105 MJE205 MJE105K MJE205K CASE 90-05	PDF
transistor BD 141 Abstract: transistor BD 378 TRANSISTOR BD 168 MJE712 MJE711 bd 125 equivalent MJE710 MJE720 bd transistor series plji Text: MJE710 SILICON MJE711 MJE712 PNP SILICON MEDIUM-POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS PNP SILICON . . . designed fo r use in low power amplifiers, as drivers in high-power amplifier and medium-speed switching circuits. • DC Current Gain hpE = 40 (Min) @ I q “ 150 mAdc	OCR Scan	MJE710 MJE711 MJE720. MJE721, MJE722 MJE710 Continuo00 AN-415) transistor BD 141 transistor BD 378 TRANSISTOR BD 168 MJE712 bd 125 equivalent MJE720 bd transistor series plji	PDF
2N6378 Abstract: 2N6379 2N6377 2N6474 PMI ADC 17S200 Text: 2N6377 2N6378 2N6379 HIGH-POWER PNP SILICON POWER TRANSISTORS 50 AMPERE POWER TRANSISTORS PNP SILICON 80,100,120 VOLTS 250 WATTS .designed for use in industrial-military power amplifier and switching circuit applications. Low Collector-Emitter Saturation Voltage Ir = 20 Adc	OCR Scan	2N6377 2N6378 2N6379 80Vdc 2N6377 2N6378 20Adc 2N6474 2N6379 PMI ADC 17S200	PDF
MJ3771 Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808 Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.	OCR Scan	MJ6257 MJ3771 MJ6302 MJ3773 MJ6700 MJ6701 MJ6701 MJ6257 MJ6302 ADC 808	PDF

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PNP SILICON POWER TRANSISTORS Search Results

PNP SILICON POWER TRANSISTORS Result Highlights (5)

PNP SILICON POWER TRANSISTORS Datasheets Context Search

PNP Transistors

MJL3281A MJL1302A

MJL3281A MJL1302A

40394

2N5195

MJE15034G

2SA70

2N5194

2N5191

2n2955

2N2955

BD241C-D

BD241C-D

to126 case

2N5191

ADC 808

2N2955

NTE192

2N5037

Untitled

MJE105

transistor BD 141

2N6378

MJ3771