2N5192
Abstract: No abstract text available
Text: 2N5192 NPN Power Transistor For Use In Power Amplifier And Switchi. 1 of 1 Home Part Number: 2N5192 Online Store 2N5192 Diodes NPN Transistors Po w er Trans is t o r For Us e In Po w er Am plifier And
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2N5192
com/2n5192
2N5192
O-126var
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Untitled
Abstract: No abstract text available
Text: 8 TM 3M 7 6 5 4 3 2 1 NOTES MEDIUM FLEX LIFE FLAT CABLE, HF539 1. MATERIAL: A PRIMARY INSULATION: HALOGEN FREE POLYOLEFIN PO). B) CONDUCTORS: 28 AWG, 19 X 40 AWG (19 X , 0.079), TINNED STRANDED COPPER. .050" 28 AWG STRANDED, MEDIUM FLEX LIFE, HALOGEN FREE PO
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HF539
E42769,
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PO 168
Abstract: 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A
Text: NTE338 Silicon NPN Transistor RF Power Amp Driver PO = 20W Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V
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NTE338
8-32-NC-3A
PO 168
8-32-NC-3A
Transistor 168
NTE338
8-32NC-3A
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Untitled
Abstract: No abstract text available
Text: Systems in Silicon Contact Information: RTD USA 814-234-8087 200 Innovation Blvd., PO Box 906 State College, Pennsylvania 16804-0906 Fax: E-mail: URL: 814 234-5218 [email protected] www.rtdusa.com AMD Embedded Processor Division, FusionE86 Support
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FusionE86
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kaschke 094
Abstract: kaschke 049 kaschke 071 KASCHKE 097 034.620 kaschke kaschke 094 094 930 Kaschke 064 kaschke sp-vz kaschke DR 796 kaschke dr-gr
Text: Automotive Electronics Industrial Electronics Entertainment Electronics Festinduktivitäten – Fixed Inductors Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany
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049* kaschke
Abstract: kaschke rds 049.903 EN60938-2 kaschke rds 25 KASCHKE 043.200 049.651 kaschke 043.202 049.659 KASCHKE 049.651
Text: Automotive Electronics Industrial Electronics Entertainment Electronics Stromkompensierte Ringkerndrosseln Common mode toroid chokes Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany
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13810ature
10kHz,
049* kaschke
kaschke rds
049.903
EN60938-2
kaschke rds 25
KASCHKE 043.200
049.651
kaschke 043.202
049.659
KASCHKE 049.651
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RD02MUS1
Abstract: transistor rf m 1104 mosfet 840 datasheet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
520MHz
175MHz)
520MHz)
transistor rf m 1104
mosfet 840 datasheet
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impeder
Abstract: kaschke ferrite material 200B 8200C kaschke 25 impeder core kaschke 26
Text: Automotive Electronics Industrial Electronics Impeder für induktives HF-Schweissen Impeder for inductive welding Entertainment Electronics Consumer Goods Industry Telecommunications Lighting Electronics GMBH & CO. WWW.KASCHKE.DE KASCHKE KG GMBH & CO. PO box 2542 • 37015 Göttingen · Germany
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RD02MUS1
Abstract: T112 transistor marking zg RD02MVS1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
RD02MUS1-101
T112
transistor marking zg
RD02MVS1
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transistor rf m 1104
Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po
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RD02MUS1
175MHz
520MHz
RD02MUS1
520MHz
175MHz)
520MHz)
transistor rf m 1104
transistor equivalent D 1047
transistor 2439
transistor equivalent 1047
S 170 MOSFET TRANSISTOR
transistor 4317
RD02MSU1
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nte360
Abstract: No abstract text available
Text: NTE360 Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts
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NTE360
175MHz
NTE360
125-175MHz
175MHz
500mA,
8-32-NC-3A
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APC UPS CIRCUIT DIAGRAM
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM MAB8051 MAB8051AH-2 p MAF80A51AH-2 P25AD APC UPS repair UPS APC APC UPS CIRCUIT BOARD
Text: MAB8031AH-2 MAB8051AH-2 PO. 0 - PO. 7 lllllll IllH W April 1989 PORT 0 PO RT 2 D R IVER S D R IV E R S iE IE RAM ! = i > ¥ "T T 128x8 I ROM PORT 2 LATCH PORT 0 LATCH £ 4K x 8 $ 3E 3E STACK POINTER PHILIPS PROGRAM ADDRESS REGISTER JL _SZ_ v_ <^=n v y PCON
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MAB8031AH-2
MAB8051AH-2
MAB8031AH-2
rst/vpd111
M89-1118/RC
APC UPS CIRCUIT DIAGRAM
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
MAB8051
MAB8051AH-2 p
MAF80A51AH-2
P25AD
APC UPS repair
UPS APC
APC UPS CIRCUIT BOARD
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r
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TIM7785-4SL
MW51050196
7785-4SL
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Untitled
Abstract: No abstract text available
Text: SK3430 REVISIONRECORD ECO 16815 ECO 24652 mmi 9 -2 1 K PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS O VEN FR EE O F CHARGE, TH E USER EM PLO YS SUCH INFORMATION AT H 6 OWN DISCRETION AND RISK. PO SH R O N C INDUSTRIES ASSU M ES NO
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PCDD15F98S0T20
SK3430
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Untitled
Abstract: No abstract text available
Text: SK3431 Eli PO SITRO NC M D USTRCS BELIEVES TH E DATA ON T H 6 DRMMNG TO B E RELIABLE, SIN CE TH E TECH M CAL INFORMATION IS GIVEN FR EE O F CHARGE, TH E USER EM PLO YS SU CH INFORMATION AT H 6 OWN DSCRETION AND RISK. PO SfTRO NC INDUSTRIES ASSU M ES NO R E SPO N S B U T Y FOR RESULTS OBENNED O R DAMAGES
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SK3431
PCDD26F98S0T20
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P6KE400CP
Abstract: P6KE440CP P6KE15CP P6KE36CP P6KE27CP P6KE39CP P6KE12CP P6KE150P
Text: P6KE6V8P,A/440P,A P6KE6V8CP,A/440CP,CA iiO lT ^ O iD O i TRANSIL FEATURES • PE AK PULSE PO W ER = 600 W @ 1 ms. . B R E A K D O W N VO LTA G E R AN G E : F ro m 6 V 8 to 440 V. ■ UNI AND BID IR E C TIO N A L TYP ES. . LO W C LAM PIN G FACTOR. ■ F A S T R ES PO N SE TIM E:
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/440P
/440CP
P6KE400CP
P6KE440CP
P6KE15CP
P6KE36CP
P6KE27CP
P6KE39CP
P6KE12CP
P6KE150P
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Untitled
Abstract: No abstract text available
Text: 6/91 W nauG H Fi 2225-K Martin Avenue, Santa Clara, CA 95050 FAX 1 CO M PO NENTS ù - ì j o- d Cascadable Amplifier AC3036 Typical Values Ultra Broad Band . Medium Gain .
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2225-K
AC3036
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AS-207
Abstract: No abstract text available
Text: — - td 'k W‘ COMPONENTS cn U G H F i ri Typical Values A PO H 7R A b lU / O 10 TO 2000 MHz JO-8 CASCADABLE _ AC2075 Low Noise Figure . <2.7 dB
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AC2075
AS-207
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FLM1011-6F
Abstract: No abstract text available
Text: FLM1011-6F -FEATURES X, Ku-Band Internally Matched FET • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
FCSI0598M200
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AC305
Abstract: Insert MA 1567
Text: y^nauEññ 8/93 _ 2225-KMartin Avenue, Santa Clara, CA 95050 FAX CO M PO NEN TS ¡B ll ; TO-8 Cascadable Amplifier Outline Drawings I AC305 Typical Values Low Noise F ig u re .
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2225-KMartin
AC305
iOQfi334
AC305
Insert MA 1567
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Untitled
Abstract: No abstract text available
Text: FLM7785-4F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm
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FLM7785-4F
-46dBc
7785-4F
FCSI0598M200
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AS105
Abstract: AS-105
Text: — -rJ 'k WnnuEnn ' rev. 10/01 CO M PO NENTS i AC105 1 TO 150 MHz TO-8 CASCADABLE AMPLIFIER AC105 Typical Values A C 105 Low Noise F ig u re . 2.5 dB Medium Output Power.
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AC105
AS105
AS-105
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pra7r7s
Abstract: 01m 927 321 rectifier d 355 n 2000 powerex kt kt 605
Text: PO WER E X IN C j> H 7Ecì4b51 0DDlfl73 fl • ^ 3 Rectifier Assemblies-Air Cooled Assembly Module Type PRA6R620_30 _30 _30 PRA6R620_40 _40 PRA6R620_ 50 PRA7R720_ 06 _06 _06 PRA7R720 _ 09 _09 PRA7R720_ 12 PRA7R7S0_08
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0DDlfl73
PRA6R620_
PRA6R620
PRA7R720
PRAARA20_
pra7r7s
01m 927 321
rectifier d 355 n 2000
powerex kt
kt 605
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FET 4016
Abstract: FLM4450-12F
Text: FLM4450-12F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 39% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm
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FLM4450-12F
-46dBc
FLM4450-12F
FCSI0499M200
FET 4016
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