LCOS
Abstract: 1P3M 0.35um 1P3M logic 3.3V 0.35um 2p4m cmos 0.35Um 2P4M 400-700nm 1P2M poly dielectric capacitor WFS-FS-20882-10
Text: LCOS Backplane Process ▲ Features • 0.65µm/0.5µm/0.35µm FEOL - Supply Voltage: 3.3V/5.0V - Option: High voltage 13V/25V Diffusion Resistor Bulk-Poly capacitor • 0.35µm BEOL - CMP planarization for dielectric layers - Perfect planarization between Pixels
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3V/25V)
400-700nm
5V/35V
5V/20V/30V
Now/2001
WFS-FS-20882-10/2001
LCOS
1P3M
0.35um 1P3M logic 3.3V
0.35um 2p4m cmos
0.35Um
2P4M
1P2M
poly dielectric capacitor
WFS-FS-20882-10
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x2 capacitor
Abstract: capacitor 0.15 j 100 MKT capacitor 0.33uf x2 gb T14472 capacitor 0.22 k 100 MKT capacitor 0.47 j 100 MKT X2-MKP IEC 60384-14 mkt T14472 capacitor 0.22 uF MKP X2
Text: Metallized Poly Film X2 Capacitor CLASS I TOPMAY X2 MKP metallized polypropylene film capacitor, class X2 – TMF003 X2-MKP are non-inductively wound with metallized polypropylene film as the dielectric/electrode with copper-clad steel leads and encapsulated in a plastic case sealed with epoxy resin.
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TMF003
GB/T14472
280VAC
x2 capacitor
capacitor 0.15 j 100 MKT
capacitor 0.33uf x2
gb T14472
capacitor 0.22 k 100 MKT
capacitor 0.47 j 100 MKT
X2-MKP
IEC 60384-14 mkt
T14472
capacitor 0.22 uF MKP X2
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0.18 um CMOS parameters
Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Text: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors
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10-3/K]
0.18 um CMOS parameters
poly silicon resistor
pepi c
0.18 um CMOS technology
World transistors
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Capacitor Dielectric Comparison
Abstract: MLCC capacitor 100nf 100v polyester surge MLCC 50V 100uf MLCC 10nF 100nF ESL X7R NPO esr dielectric absorption Styrene capacitor 10100G
Text: Technical Note 3 Capacitor Dielectric Comparison MLCC Characteristic Capacitance DF I.R. Voltage VDC Temperature Range T.C (∆C) Dielectric Absorption Max Frequency (MHz) Frequency response Features/ Application Remarks Ceramic Disc Aluminum Electrolytics
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1pF100nF
100pF100nF
100pF-
1-10G
10-100G
50v-600v
1nF-10uF
1uF-100uF
Capacitor Dielectric Comparison
MLCC
capacitor 100nf 100v polyester
surge MLCC
50V 100uf
MLCC 10nF 100nF ESL
X7R NPO esr
dielectric absorption
Styrene capacitor
10100G
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CMOS Process Family
Abstract: 0.6 um cmos process BSIM3 resistor bsim3 bsim3 model metal oxide in capacitor xfab X-Fab
Text: 0.8 µm CMOS Process Family CX08 State-of-the-art 5V 0.8µm CMOS Technology Main Process Flow with additional options: P substrate Analog elements: linear capacitor, high ohmic resistor High voltage module: different n- and p-type, MOSFETs up to 50V, N substrate on demand
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transistor poly3
Abstract: RR510 RR-504 RR-520 X28C256 rr520
Text: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process
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RR-520
RR-504
000PageCycles
transistor poly3
RR510
RR-504
RR-520
X28C256
rr520
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SCR SN 101
Abstract: AY 5 3500 AY 6 smd SCR SN 102 SN 101 SCR
Text: A H S e r ie s: P 9 0 P or ce lain C ap acitor s D e scr ip tion F u n ction al A p p lication s B e n e fi ts Porcelain Capacitors Positiv e TC “ P90” L ow ESR, High Q Capacitance Range 0.1 - 5100 pF High Self- resonance L ow Noise Established Reliability
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ccd diode datasheet
Abstract: and gate cmos Poly
Text: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services CMOS CCD Processes 1.2µm CMOS CCD Process ❖ ❖ ❖ ❖ ❖ ❖ ❖ ❖ Integration of CCD elements into a 1.2 N-well process 2 poly, 2 metal
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5E14/cc
ccd diode datasheet
and gate cmos
Poly
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2P4M
Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
Text: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features Voltage Logic,High Voltage Starting material 3.3V,18V/18V P-type (100), Non-Epi Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)
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8V/18V
100x100um2
2P4M
cmos transistor 0.35 um
transistor 2p4m
0.35Um 2P4M
of 2p4m
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varactor flip chip
Abstract: CMOS Stacked RF INtermétal
Text: ▼ The Fujitsu Analog and RF CMOS Technology Description Building on Fujitsu’s expertise in leading-edge CMOS processes and analog design capabilities, the company’s RF CMOS technologies are optimized for wireless networks, cellular communication, WiMAX, digital multi-media
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100GHz.
WFS-FS-21329-11/2008
varactor flip chip
CMOS Stacked RF
INtermétal
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all transistor
Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
Text: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V Substrate P-type (100), Non-Epi Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) Isolation
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Mn2O3
Abstract: 20D3 graphite foil APEC ips presentation
Text: 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors John D. Prymak KEMET Electronics Corporation P. O. Box 5928 Greenville, SC 29606 Abstract – Reducing ESR in the tantalum capacitor has been the key driver in the application of polymer as a replacement for the
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CMOS Process Family
Abstract: 0.6 um cmos process 500-nm CMOS standard cell library CX06
Text: 0.6 µm CMOS Process Family CX06 State-of-the-art 5V 0.6µm CMOS Technology Single-layer poly with double and triple layer metal option Double-layer poly with double and triple layer metal option Digital standard cell library Analog elements Memory generators RAM, DPRAM, ROM compiler
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NMOS transistor 0.18 um CMOS
Abstract: 1P3M LOCOS
Text: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features Voltage Logic,High Voltage 5V/5V,16V/16V Starting material P-type (100), 9~12 Ω-cm Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side
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6V/16V
NMOS transistor 0.18 um CMOS
1P3M
LOCOS
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bsim3v3
Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Text: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional
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C035ANV]
bsim3v3
C035ANV
IMD2 transistor
pmos Vt
poly dielectric capacitor
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AL 2001
Abstract: AL-2001 graphite foil capacitor electrolyte datasheet F2118 mno2 Al2001 T557
Text: Performance Improvements with Polymer Ta and Al 2001 APEC by John Prymak Applications Manager P.O. Box 5928 Greenville, SC 29606 Phone (864) 963-6300 Fax (864) 963-66521 www.kemet.com F2118 12/04 1 of 9 Improvements with Polymer Cathodes in Aluminum and Tantalum Capacitors
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F2118
AL 2001
AL-2001
graphite foil
capacitor electrolyte datasheet
mno2
Al2001
T557
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Untitled
Abstract: No abstract text available
Text: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors
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AN0001
AN0004
AN0005
19-Jan-2009
\SCHNEIDER\01192009
1\SYFT\1206J0630220JCT
AN0006
AN0008
598KB)
AN0012
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Untitled
Abstract: No abstract text available
Text: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors
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AN0001
AN0004
AN0005
19-Jan-2009
\SCHNEIDER\01192009
1\SYFT\0805J0630220JCT
AN0006
AN0008
598KB)
AN0012
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Untitled
Abstract: No abstract text available
Text: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors
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AN0001
AN0004
AN0005
19-Jan-2009
\SCHNEIDER\01192009
1\SYFT\0805J0630680JCT
AN0006
AN0008
598KB)
AN0012
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Untitled
Abstract: No abstract text available
Text: Syfer - Multilayer Ceramic Capacitors and EMI Filters Monday 19th January 2009 Go Input Part Number ABOUT SYFER High Voltage SM Capacitors AGENTS & DISTRIBUTORS NEWS SPOTLIGHT CONTACT US Choose your Language: English Please login Home Multilayer Ceramic Capacitors
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AN0001
AN0004
AN0005
19-Jan-2009
\SCHNEIDER\01192009
1\SYFT\0805J0630560JCT
AN0006
AN0008
598KB)
AN0012
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arcotronics capacitors mkp
Abstract: No abstract text available
Text: CAPACITORS FOR CLAMPING APPLICATIONS METALLIZED POLYPROPYLENE MKP C 4DR Series The Capacitors od C4D Series are designed with reinforced metallized poly propylene dielectric film. These Capacitors are suitable to withstand the hea vy current pulses usually met in clamping circuits showing very low values
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C4DRSUQ4100
C4DRSUQ4200
C4DRSUQ4300
C4DRSUQ4400
C4DRSUQ4500
C4DRSUQ4750
C4DRSUQ5150
arcotronics capacitors mkp
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SC-15
Abstract: EEPROM flotox Japanese Transistor Cross References
Text: u these components. In this paper, we will focus on the technology factors by comparing the three dom inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES
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transistor equivalent table
Abstract: SD2300
Text: NEW ULTRA-HIGH DEN SITY TEX TU R ED POLY-Si FLOATING G A TE E 2PROM C E L L By D. Guterman, B. Houck, L. Starnes and B. Yeh This paper describes a new, highly scaled cell structure, the smallest full function E2PROM cell re ported to date. It utilizes the textured triple-poly-si
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OCR Scan
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BD230G01S/04
X130/1
transistor equivalent table
SD2300
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PDF
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Sprague 40 capacitor
Abstract: No abstract text available
Text: QUICK GUIDE TO FILM CAPACITORS OSPRAGUE GUIDE TO METALIZED-FILM CAPACITORS PAPER/ POLYESTER Sprague milm Metal-Cased Tubular Type Cap. Range Temp. Range Volt. Range POLYCARBONATE Sprague Metfilm®K 218P .001-12>*F - 5 5 to + 125°C 100to400VDC POLYPROPYLENE
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01-12uF
50to400VDC
033-20pF
01-10/iF
80to440VAC
001-10/iF
0047-10mF
50to600VDC
022-1O
Sprague 40 capacitor
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