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    POLYFET RF DEVICES Search Results

    POLYFET RF DEVICES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    POLYFET RF DEVICES Datasheets Context Search

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    LK141

    Abstract: 60W VHF TV RF amplifier
    Text: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation


    Original     		PDF ISO9000 5208A 50Vdc 4Q2012. LK141 60W VHF TV RF amplifier

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1027 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended


    OCR Scan     		PDF F1027

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1170 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" process features gold metal for greatly extended


    OCR Scan     		PDF F1170 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


    OCR Scan     		PDF F1006 1110Avenida

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    Abstract: No abstract text available
    Text: polyfet rf devices F1020 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended


    OCR Scan     		PDF F1020 72410m D000135

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended


    OCR Scan     		PDF F2046 \GS12V 1110AvenidaAcaso, 724100e

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    Abstract: No abstract text available
    Text: polyfet rf devices F3002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended


    OCR Scan     		PDF F3002 7241GCn 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1019 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


    OCR Scan     		PDF F1019 1110Avenida

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1240 PATENTED GOLD METAUZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended


    OCR Scan     		PDF F1240 1110AvenidaAcaso, 7241am

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended


    OCR Scan     		PDF F2201S

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    Abstract: No abstract text available
    Text: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended


    OCR Scan     		PDF F1077 1110AvenidaAcaso, 7241am

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2003 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended


    OCR Scan     		PDF F2003 VGS13V

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


    OCR Scan     		PDF F1001C 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1174 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended


    OCR Scan     		PDF F1174 C0D0G17Ã 7241DD1

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    Abstract: No abstract text available
    Text: polyfet rf devices F1065 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F1065 72410CH D0DD151

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    Abstract: No abstract text available
    Text: polyfet rf devices F1002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended


    OCR Scan     		PDF F1002

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1001 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F1001

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended


    OCR Scan     		PDF F1260 724100T

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F2202S 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1207 060QfeOâ

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2001S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F2001S 724100e

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1410 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF F1410 DDD02D7

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F1063 1110AvenidaAcaso,

    F3003

    Abstract: No abstract text available
    Text: POLYFET R F DEVICES BbE D • VamOM ODQQQScJ ^ F3003 POLYFET RF DEVICES General Description PATENTED GOLD METALIZED SILICON . RF POWER MOSFET Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown,


    OCR Scan     		PDF F3003