TEA15xx-series
Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors
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AN10117-01
2/W97
AN10116:
AN10230:
PMEG1020EA
PMEG2010EA
D-22529
TEA15xx-series
laptop inverter ccfl
low noise transistors bc638
power transistor transistors equivalents
TV power transistor datasheet
AN10117-01
PNP SOT89
laptop motherboard resistors
Royer oscillator
Schottky Diode SC-62
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Medium Power Bipolar Transistors
Abstract: 2N5320 2N5322
Text: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.
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2N5320,
2N5322
Medium Power Bipolar Transistors
2N5320
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2N5322 2N5320
Abstract: 2N5320 2N5322 2N532
Text: 2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN
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2N5320
2N5322
2N5320
2N5322
2N5322 2N5320
2N532
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philips zener diode
Abstract: philips cfl Philips Semiconductors philips datasheet surface mount zener diode BYV26x PHILIPS DIODE JTP 68 diode rf semiconductors BYW63 circuit tv Philips 14
Text: Philips Semiconductors 1 Philips Discretes and MultiMarket ICs Medium Power Rectifiers 1 Philips Semiconductors Medium Power Rectifiers Ratings of Medium Power Rectifiers? • Reverse Voltage 50 - 2000 V. • Available in leaded and SM versions 2 2 • Switching speed 5 ns - 5 µs.
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OD124
OD106
philips zener diode
philips cfl
Philips Semiconductors
philips datasheet surface mount zener diode
BYV26x
PHILIPS DIODE
JTP 68 diode
rf semiconductors
BYW63
circuit tv Philips 14
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AA3R
Abstract: 2SB772S V/AA3R
Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772S
2SB772S
2SD882S
OT-223
2SB772SL
2SB772S-AA3-R
2SB772SL-AA3-R
OT-223
QW-R207-012
AA3R
V/AA3R
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2N6045G
Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2
Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching
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2N6040,
2N6042,
2N6043,
2N6045
2N6043
2N6045
2N6043
2N6045G
2N6040
2N6042
2N6040G
2N6041
2N6044
transistor marking T2
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2N6040
Abstract: 2N6045G 2N6043G 2N6040G 2N6042 2N6045 2N6042G 2N6041 2N6043 2N6044
Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching
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2N6040,
2N6042,
2N6043,
2N6045
2N6043
2N6045
2N6043
2N6040
2N6045G
2N6043G
2N6040G
2N6042
2N6042G
2N6041
2N6044
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TRANSISTOR zo 109 ma
Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C
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B15V140
B15V140
OT-223
OT-103
TRANSISTOR zo 109 ma
transistor zo 109
transistor 86
IC 7585
midium power uhf transistor
microwave transistor
ZO 109 transistor
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1.27 GHz transistor
Abstract: transistor j 127 B15V180
Text: BIPOLARICS, INC. Part Number B15V180 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V180 is a high performance silicon bipolar transistor intended for medium power linear and Class C
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B15V180
B15V180
1.27 GHz transistor
transistor j 127
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2SB772S-T92-B
Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES
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2SB772S
2SB772S
2SD882S
2SB772SL
2SB772S-T92-B
2SB772SL-T92-B
2SB772S-T92-K
2SB772SL-T92-K
QW-R201-023
2SD882S
2SB772SL-T92-B
2SB772SL-T92-K
transistor T 023
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2SB772L-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES
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2SB772
2SB772
2SD882
O-251
2SB772L
2SB772-TM3-R
2SB772L-TM3-R
O-251
QW-R213-016
2SB772L-T
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2N6718
Abstract: IC350 2N6718L
Text: UNISONIC TECHNOLOGIES CO., LTD. 2N6718 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES 1 *High Power: 850mW *High Current: 1A
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2N6718
2N6718
850mW
O-126C
2N6718L
2N6718-T6C-A-K
2N6718L-T6C-A-K
O-126C
QW-R217-007
IC350
2N6718L
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Untitled
Abstract: No abstract text available
Text: PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: • PNP Silicon Power Switching Transistors • Medium Power Amplifier and Switching Applications Absolute Maximum Ratings: Ta = 25°C unless otherwise specified
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BC160-16
BC161-16
element14
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SB2202
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
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SB2202
SB2202
SB2202L-x-TM3-R
SB2202G-x-TM3-R
SB2202L-x-TN3-T
SB2202G-x-TN3-T
SB2202L-x-TN3-R
SB2202G-x-TN3-R
O-251
O-252
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BD678A
Abstract: BD682 BD675A BD676A BD677A BD679A BD680A BD681
Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD675A, BD677A, BD679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage
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BD676A/678A/680A/682
O-126
BD675A,
BD677A,
BD679A
BD681
BD676A
BD678A
BD680A
BD682
BD678A
BD682
BD675A
BD676A
BD677A
BD680A
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2SB772S
Abstract: 2SB772SL-AB3-R 2SB772S-AB3-R 2SD882S
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772S
2SB772S
2SD882S
OT-89
2SB772SL
2SB772S-AB3-R
2SB772SL-AB3-R
QW-R208-002
2SB772SL-AB3-R
2SD882S
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MJE350 b c e
Abstract: Power Transistors TO-126 Case MJE350
Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
MJE350 b c e
Power Transistors TO-126 Case
MJE350
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2SB772SL
Abstract: 2SB772S 2SB772SG 2SD882S
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES
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2SB772S
2SB772S
2SD882S
2SB772SL
2SB772SG
2SB772S-x-AA3-R
2SB772S-x-AB3-R
2SB772S-x-T92-B
2SB772S-x-T92-K
2SB772SL-x-AA3-R
2SB772SL
2SB772SG
2SD882S
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PCOT
Abstract: BCW67f BCW66 bss65 BSV62 BCW65A BCW65B BCW65C BCW66F BCW66G
Text: SOT-23 TABLE 2 -S IL IC O N PLANAR MEDIUM POWER TRANSISTORS Devices in this table are suitable for medium current, medium power sw itching and general purpose applications. Ratings and Characteristics at 25 °C ambient temperature. _ _ _ _ _ V /lavimnm □
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OT-23
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
BFQ31/31A
2-00t
BFS17/17R
PCOT
BCW67f
BCW66
bss65
BSV62
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2SC2340
Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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L427414
r-33-0S
NE568
NE56800
operate-69
2SC2340
MR 6500
BM74
2SC2339
NE56800
NE56803
NE56853
NE56854
NE56857
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TL235
Abstract: 2N6292
Text: 2N6292 NPN POWER TRANSISTORS 70 VOLTS 7 AMP, 40 WATTS These general-purpose medium-power transistors are in tended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.
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2N6292
T0-220-AB
2N6292
TL235
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2SC2340
Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers
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L427414
r-33-0S
NE568
NE56800
2SC2340
transistor BJ 102 131
NE56800
2SC2339
NE56803
NE56853
NE56857
NE56887
ne56853e
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BD681
Abstract: No abstract text available
Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD676A, BD678A, BD680A and BD682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage
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OCR Scan
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BD675A/677A/679A/681
BD676A,
BD678A,
BD680A
BD682
BD677A
BD679A
BD681
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BD677A
Abstract: Bd681
Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD676A, BD678A, BD680A and BD682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol
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OCR Scan
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BD675A/677A/679A/681
BD676A,
BD678A,
BD680A
BD682
BD675A
BD677A
BD679A
BD681
BD677A
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