POWER GE TRANSISTOR PNP Search Results

POWER GE TRANSISTOR PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

POWER GE TRANSISTOR PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion 3 Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344SF 1 2 Ordering Information Type N O. M a r k in g SOT- 2 3 F Pa ck a ge Code	Original	2SA1981SF 2SC5344SF KSD-T5C082-000	PDF
Untitled Abstract: No abstract text available Text: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code	Original	STB1017PI STD1408PI O-220F-3L STB1017 SDB20D45 KSD-T0O110-000	PDF
TRANSISTOR a1981 Abstract: No abstract text available Text: 2SA1981 PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion E E B B C Features C • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344 TO-92 Ordering Information Type N O. M a r k ing Pa ck a ge Code 2SA1981	Original	2SA1981 2SC5344 A1981 KSD-T0A017-001 TRANSISTOR a1981	PDF
power ge transistor pnp Abstract: 2SB885 2SD1195 Text: Inchange Semiconductor Product Specification 2SB885 Silicon PNP Power Transistor DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1195 APPLICATIONS ・For motor drivers,printer hammer	Original	2SB885 O-220C 2SD1195 power ge transistor pnp 2SB885 2SD1195	PDF
transistor Comparison Tables Abstract: ZTX950 ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820 Text: Application Note 26 Issue 1 April 1996 Fast Charging Batteries with Zetex High Current PNP Transistors and Benchmarq Controller ICs Neil Chadderton Introduction Fast Charge Controller ICs The advances of digital technology and a waiting market have created a huge	Original	ZTX949 320mV A/300mA ZTX951 300mV A/400mA ZTX788B ZTX976A, ZTX950 OT223 transistor Comparison Tables ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives Unit Collector-base voltage	Original	2002/95/EC) UNA0222 UN222)	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 4.0±0.2 M Di ain sc te	Original	2002/95/EC) 2SA1534, 2SA1534A 2SC3940 2SC3940A 2SA1534	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistor Arrays UNA0228 UN228 Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm For motor drives 0.2+0.1 –0.0 0.4±0.1 9 8 7 6 Parameter Symbol Rating Unit VCBO −12 V Collector-emitter voltage	Original	UNA0228 UN228)	PDF
transistor p89 Abstract: transistor be p89 Text: SOT89 PNP SILICON PLANAR M EDIU M POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995 PARTMARKING DETAIL - O P89 ABSOLUTE M A X IM U M RATINGS. SY M BO L PARAM ETER C o lle cto r-B a se V o lta ge C olle ctor-E m itter V o lta ge E m itte r-B ase V o lta ge	OCR Scan	--500mA, transistor p89 transistor be p89	PDF
V8060 Abstract: No abstract text available Text: 1989963 C E N T R A L S E M I C O N D U C T O R [CENTRAL SEMICONDUCTOR : •' • 92D 00380 T ~ 3 3~ l'ìfi'mH aOQDBfiO D41 El D41E5 D41E7 . IV n U~ir: eCKCK£5 èMtfitì&GEùÈaSigteE1SeC yi fcò'o PNP SILICON POWER TRANSISTOR Central semiconductor Corp.	OCR Scan	D41E5 D41E7 T0-202 D41E1 D41E7 V8060	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - SEPTEMBER 94 FEATURES * 15 V olt V CE0 * G ain of 200 at lc =2 A m p s * V e ry lo w saturation v olta ge ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L V A LU E U N IT	OCR Scan	ZTX788A -50mA, -500mA, 300ns.	PDF
SE120 TRANSISTOR Abstract: SE120 ZTX649 Text: NPN Silicon Planar Medium Power Power Transistor ZTX649 FEATURES • • • • • • 1 .5 W p o w e r d issipation at T an b = 2 5 ° C * 2 A c o n tinu o u s lc Excellent gain ch a ra cte ristics up to 6 A pulsed) Lo w sa tu ra tio n vo lta ge s Fast s w itc h in g	OCR Scan	ZTX649 SE120 SE121 SE122 SE120 TRANSISTOR SE120 ZTX649	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .	OCR Scan	BDP32 OT223	PDF
lem lta 100p Abstract: lta 100p 6100B Text: SOT89 PNP SILICON PLANAR M ED IU M POWER TRANSISTOR iSSUE 2 - FEBRUARY 1995 O FEATURES * H igh g a in a n d lo w saturation v o lta ge s C O M P LEM EN T A R Y TYPE - BCX68 P A R T M A R K IN G D E T A IL - BCX69 - CJ BCX69T6 CG B C X 6 9 -2 5 -C H ABSOLUTE M A X IM U M RATINGS.	OCR Scan	BCX68 BCX69 BCX69T6 -100n -500mÂ --500m 300us. lem lta 100p lta 100p 6100B	PDF

2N2907 Abstract: 935J Text: A L LE GR O M I C R O S Y S T E M S INC T3» D • 0 S Ü 4 33 Ô 0 0 0 3 73 1 7 ■ AL6R i PROCESS TQL Process TQL PNP Small-Signal Transistor Process T Q L is a double-diffused P N P silicon epi taxial planar device for low-noise, high-gain ampli fication, m edium -power sw itching, and ge n e ralpurpose use from dc to UHF. Process T Q L is the	OCR Scan	0S0433Ã 500mA 050M33Ã 2N2907 935J	PDF
2sb1243 TRANSISTOR Abstract: No abstract text available Text: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier	OCR Scan	2SB1243 2SD1864 2SB1243 2sb1243 TRANSISTOR	PDF
2sa 102 transistor Abstract: power ge transistor pnp transistors 2SA Text: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 8 6 2 *0 , where ★ is hFE code and □ is lot number • high breakdown voltage, typically BVceo = —400 V • low collector saturation voltage	OCR Scan	2SA1862F5 SC-63) A/-100 2sa 102 transistor power ge transistor pnp transistors 2SA	PDF
mj11011 Abstract: No abstract text available Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica tions. • •	OCR Scan	MJ11012/D J11013 J11015 J11012 J11014 mj11011	PDF
B1238 Abstract: 2SB1238 transistor 2sb1238 Text: 2SB1238 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • high power: Pc = 1 W 2SB1238 (ATVTV2) • high breakdown voltage and large current capacity: V CEO = -80 V, lc = -0.7 A • complementary pair with 2SD1859 Applications	OCR Scan	2SB1238 2SD1859 2SB1238 B1238 transistor 2sb1238	PDF
T6753 Abstract: SFE 8 FZT653 Text: SM-8 COMPLEMENTARY M EDIUM POWER TRANSISTORS ISSUE 1 - JANUARY 1996 LJ_1 Ci FT“ Cl C2cm CiŒj :ij bi to El NPN IX ] b2 \|=n e2 pnp PARTMARKING DETAIL - T6753 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L N PN PN P U N IT C o lle cto r-B a se V o lta ge	OCR Scan	T6753 300ns. FZT753 T6753 SFE 8 FZT653	PDF
592p Abstract: transistor marking LG Text: CentralM CMXT3906 Semiconductor Corp. SURFACE MOUNT DUAL PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3906 type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal general	OCR Scan	CMXT3906 OT-26 06-January OT-26 592p transistor marking LG	PDF
Untitled Abstract: No abstract text available Text: MP4005 TOSHIBA TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 fl fl ^ HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. • • • • Small Package by Full Molding (SIP 10 Pin)	OCR Scan	MP4005	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER M INI MOLD D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2 SA 1 4 6 3 is designed for power amplifier and high speed switching applications. In mMlimttert FEATURES	OCR Scan	2SA1463 2SA1463 SC3736	PDF
mj4502 Abstract: No abstract text available Text: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR	OCR Scan	MJ4502/D J4502 MJ802 O-204AA mj4502	PDF

POWER GE TRANSISTOR PNP Search Results

POWER GE TRANSISTOR PNP Result Highlights (5)

POWER GE TRANSISTOR PNP Datasheets Context Search

Untitled

Untitled

TRANSISTOR a1981

power ge transistor pnp

transistor Comparison Tables

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Untitled

transistor p89

V8060

Untitled

SE120 TRANSISTOR

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lem lta 100p

2N2907

2sb1243 TRANSISTOR

2sa 102 transistor

mj11011

B1238

T6753

592p

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mj4502