150N15
Abstract: E 150N10 150N10 9100pF
Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20
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150N15
OT-227
E153432
150N15
E 150N10
150N10
9100pF
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Untitled
Abstract: No abstract text available
Text: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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ISOPLUS220TM
25N80C
ISOPLUS220LV
728B1
065B1
123B1
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Untitled
Abstract: No abstract text available
Text: FQA46N15 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Features Description • 50 A, 150 V, RDS on = 42 mΩ (Max) @VGS = 10 V, ID = 25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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FQA46N15
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Standard Power MOSFET IXTH 60N15 VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150
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60N15
O-247
728B1
123B1
728B1
065B1
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150N15
Abstract: No abstract text available
Text: IXFK 150N15 IXFX 150N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150
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O-264
150N15
150N15
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SQD25N15-52-GE3
Abstract: C4825
Text: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration
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SQD25N15-52
AEC-Q101
O-252
2002/95/EC
SQD25N15-52-GE3
18-Jul-08
SQD25N15-52-GE3
C4825
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SQM85N15-19-GE3
Abstract: No abstract text available
Text: SQM85N15-19 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.019 ID (A) • TrenchFET Power MOSFET 85 Configuration
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SQM85N15-19
2002/95/EC
AEC-Q101
O-263
SQM85N15-19-GE3
18-Jul-08
SQM85N15-19-GE3
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SUD25N15-52
Abstract: No abstract text available
Text: SUD25N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS
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SUD25N15-52
O-252
S-05234--Rev.
17-Dec-01
SUD25N15-52
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sqm85n
Abstract: No abstract text available
Text: SQM85N15-19 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 150 RDS(on) () at VGS = 10 V • TrenchFET Power MOSFET 0.019 ID (A) 85
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SQM85N15-19
AEC-Q101
2002/95/EC
O-263
O-263
SQM85N15-19-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
sqm85n
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150T4
Abstract: NTD3055 NTD3055-150 RG 702
Text: NTD3055-150 Power MOSFET 9.0 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 150 mΩ Typical Applications
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NTD3055-150
tpv10
tpv10
r14525
NTD3055
150/D
150T4
NTD3055-150
RG 702
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75n15
Abstract: No abstract text available
Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS
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75N15
75N15
O-247
O-268
O-268
728B1
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solar inverter circuit
Abstract: D-68623
Text: Advanced Technical Information FMM 65-015P ID25 Trench Power MOSFET = 65 A = 150 V Ω = 12.5 mΩ VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM T1 T2 1 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 150 V ±20 V ID25
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65-015P
D-68623
65-015P
solar inverter circuit
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starter/generator
Abstract: D-68623
Text: Advanced Technical Information FMM 150-0075P ID25 Trench Power MOSFET = 150 A = 75 V Ω = 4.7 mΩ VDSS RDSon -Phaseleg Topologyin ISOPLUS i4-PACTM T1 T2 1 5 MOSFET T1/T2 Features Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 75 V ±20 V ID25
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150-0075P
200IXYS
D-68623
150-0075P
starter/generator
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Si2325DS
Abstract: No abstract text available
Text: Si2325DS New Product Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −150 150 rDS(on) (W) ID (A) 1.2 @ VGS = −10 V −0.69 1.3 @ VGS = −6.0 V −0.66 D TrenchFETr Power MOSFET D Ultra Low On-Resistance D Small Size Qg (Typ)
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Si2325DS
O-236
OT-23)
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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SQM25N15-52
AEC-Q101
O-263
SQM25N15-52-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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SQD25N15-52
AEC-Q101
O-252
O-252
SQD25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IXTH75N15
Abstract: 75N15
Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20
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75N15
O-247
405B2
IXTH75N15
75N15
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SUP90N15-18P
Abstract: SUP90N15-18P-E3
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
11-Mar-11
SUP90N15-18P
SUP90N15-18P-E3
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4409
Abstract: SI4409DY-T1-E3
Text: New Product Si4409DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 1.2 at VGS = - 10 V - 1.3 1.3 at VGS = - 6 V - 1.2 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.8 nC COMPLIANT
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Si4409DY
Si4409DY-T1-E3
08-Apr-05
si4409
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Untitled
Abstract: No abstract text available
Text: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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Si7738DP
Si7738DP-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch
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SUM75N15-18P
O-263
SUM75N15-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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81215
Abstract: si7620
Text: Si7620DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.126 at VGS = 10 V 13 9.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS
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Si7620DN
Si7620DN-T1-GE3
11-Mar-11
81215
si7620
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SUP90N15-18P
Abstract: SUP90N15-18P-E3
Text: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N15-18P
O-220AB
SUP90N15-18P-E3
08-Apr-05
SUP90N15-18P
SUP90N15-18P-E3
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