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    POWER MOSFET TRANSISTOR SOT Search Results

    POWER MOSFET TRANSISTOR SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK1590DP3-A0#J2 Renesas Electronics Corporation Nch Single Power Mosfet 150V 1A 1950Mohm Sot-223 Visit Renesas Electronics Corporation
    RJK6011DP3-A0#J2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 0.1A 52000Mohm Sot-223A Visit Renesas Electronics Corporation
    N0301P-T1-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -4.0A 75Mohm Sot-23F Visit Renesas Electronics Corporation
    N0301N-T1-AT Renesas Electronics Corporation Nch Single Power Mosfet 30V 4.5A 36Mohm Sot-23F Visit Renesas Electronics Corporation
    N0302P-T1-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -4.4A 54Mohm Sot-23F Visit Renesas Electronics Corporation

    POWER MOSFET TRANSISTOR SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    um6k31n

    Abstract: UM6K31
    Text: UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR „ 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. „ „ 3 SOT-363 SYMBOL ORDERING INFORMATION


    Original     		PDF UM6K31N OT-363 UM6K31N UM6K31NL-AL6-R UM6K31NG-AL6-R OT-363 QW-R502-503 UM6K31

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 18OHM, UF640 QW-R502-066

    uf640

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 18OHM, UF640 QW-R502-066

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 18OHM, UF640 QW-R502-066

    power window motor 12v

    Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
    Text: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping


    Original     		PDF STB50NE10 STGD3NB60SD STB9NB50 O-220 STP80NE03L-06 STB80o STB80NF55L-06 OT-223 PowerSO-10TM O-220 power window motor 12v wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor

    capacitor 0805 avx

    Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010 MRF21010 capacitor 0805 avx 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR  1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 OT-89 UP1868G-AA3-R UP1868G-AB3-R UP1868G

    Power MOSFET SOT-223

    Abstract: UP1868L-AB3 QW-R207-015
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ 1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 OT-89 UP1868L-AA3-F-R UP1868L-AB3-F-R OT-223 UP1868-AA3-R UP1868-AB3-R QW-R207-015 Power MOSFET SOT-223 UP1868L-AB3

    Untitled

    Abstract: No abstract text available
    Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118


    Original     		PDF PBSM5240PF OT1118

    NXP SMD ic MARKING CODE

    Abstract: No abstract text available
    Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118


    Original     		PDF PBSM5240PF OT1118 NXP SMD ic MARKING CODE

    N2NF10

    Abstract: marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT
    Text: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor


    Original     		PDF STN2NF10 OT-223 N2NF10 N2NF10 marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT

    capacitor 0805 avx

    Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010/D MRF21010 capacitor 0805 avx MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23

    UP1868

    Abstract: UP1868-AA3-F-R UP1868L-AA3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 UP1868L UP1868-AA3-F-R UP1868L-AA3-F-R OT-223 QW-R207-015 UP1868 UP1868-AA3-F-R UP1868L-AA3-F-R

    TRANSISTOR b100

    Abstract: diode r207 UP1868
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 OT-223 UP1868L UP1868-AA3-R UP1868L-AA3-R QW-R207-015 TRANSISTOR b100 diode r207 UP1868

    transistor motorola 114-8

    Abstract: motorola s 114-8 smd mosfet z8 transistor smd z8 SMD MOSFET N Z4 motorola 114-8
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies


    Original     		PDF MRF18090A/D MRF18090AR3 transistor motorola 114-8 motorola s 114-8 smd mosfet z8 transistor smd z8 SMD MOSFET N Z4 motorola 114-8

    motorola sps transistor

    Abstract: MRF21010
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		PDF MRF21010 RDMRF21010NCDMA motorola sps transistor MRF21010

    CRCW08052201FKEA

    Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,


    Original     		PDF MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010

    transistor motorola 114-8

    Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies


    Original     		PDF MRF18090A/D MRF18090AR3 transistor motorola 114-8 Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8

    j 6815 transistor

    Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .


    OCR Scan     		PDF RD00HVS1 175MHz RD00HVS1 175MHz 48MAX OT-89 j 6815 transistor TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor

    transistor 1971 mitsubishi

    Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		PDF RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994

    BUK110-50GL

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface


    OCR Scan     		PDF BUK110-50GL BUK110-50GL OT404

    mosfet fq transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as


    OCR Scan     		PDF BUK107-50DS BUK107-50DS ie-05 mosfet fq transistor

    C5052

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as


    OCR Scan     		PDF BUK107-50DS 1E-07 1E-05 1E-03 C5052

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358