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    POWER RELAY N-CHANNEL MOSFET Search Results

    POWER RELAY N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER RELAY N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power mosfet switching data book

    Abstract: utp45n02
    Text: UNISONIC TECHNOLOGIES CO., LTD UTP45N02 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.


    Original     		PDF UTP45N02 UTP45N02 UTP45N02L UTP45N02-TN3-R UTP45N02L-TN3-R UTP45N02-TN3-T UTP45N02L-TN3-T QW-R502-180 power mosfet switching data book

    ET840

    Abstract: No abstract text available
    Text: ET840 9 Amps， ，500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF ET840 Amps500Volts ET840 O-220 O-220F O220F

    TO252 rthjc

    Abstract: 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET
    Text: 4N60 4 Amps， ，600Volts N-Channel MOSFET • Description The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET4N60 O-220 O-220F O220F TO252 rthjc 4N60 TO-252 4n60 to252 4n60 mosfet 4n60 4N60 application note TO-252 16nC TO-252 N-channel MOSFET TO-252 N-channel power MOSFET

    Amps500Volts

    Abstract: No abstract text available
    Text: ET830 5 Amps， ，500Volts N-Channel MOSFET • Description The ET830 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF ET830 Amps500Volts ET830 O-220 O-220F O220F

    7N60

    Abstract: No abstract text available
    Text: 7N60 7 Amps， ，600Volts N-Channel MOSFET • Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET7N60 O-220 O220F 7N60

    mosfet 60a 200v

    Abstract: ET73 N-channel enhancement 200V 60A
    Text: ET730 6 Amps， ，400Volts N-Channel MOSFET • Description The ET730 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF ET730 Amps400Volts ET730 O-220 O220F mosfet 60a 200v ET73 N-channel enhancement 200V 60A

    88W51

    Abstract: ET630
    Text: ET630 9 Amps， 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF ET630 200Volts ET630 00A/s Width300s 88W51

    Untitled

    Abstract: No abstract text available
    Text: ET740 10.5 Amps， ，400Volts N-Channel MOSFET • Description The ET740 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF ET740 Amps400Volts ET740 O-220 O-220F O220F

    AN7254

    Abstract: AN7260 RFP15N15 TB334
    Text: RFP15N15 Data Sheet January 2002 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


    Original     		PDF RFP15N15 TB334 TA09195. O-220AB AN7254 AN7260 RFP15N15 TB334

    PN channel MOSFET 10A

    Abstract: UK2996L-TA3-T C5520 UK2996 UK2996-TA3-T UK2996-TF3-T n-CHANNEL POWER MOSFET 600v MOSFET 25A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay


    Original     		PDF UK2996 O-220 UK2996 O-220F UK2996L UK2996-TA3-T UK2996L-TA3-T UK2996-TF3-T UK2996L-TF3-T QW-R502-063 PN channel MOSFET 10A UK2996L-TA3-T C5520 UK2996-TA3-T UK2996-TF3-T n-CHANNEL POWER MOSFET 600v MOSFET 25A 600V

    uf830l

    Abstract: UF830G UF830
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay


    Original     		PDF UF830 O-220 O-220F O-262 O-263 O-251 O-252 UF830L-TAt QW-R502-046 uf830l UF830G UF830

    S1-M10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay


    Original     		PDF UF830 O-220 O-220F O-220F1 O-262 O-263 O-251 O-252 QW-R502-046 S1-M10

    linear 50 Ohm Line Drivers

    Abstract: MOSFET 150V AN-7509
    Text: RFP15N15 Data Sheet January 2002 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


    Original     		PDF RFP15N15 TA09195. TB334 O-220AB RFP15N15 O-220 O-220 linear 50 Ohm Line Drivers MOSFET 150V AN-7509

    transistor buz71a

    Abstract: BUZ71A TB334
    Text: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original     		PDF BUZ71A TA9770. BUZ71of transistor buz71a BUZ71A TB334

    PN channel MOSFET 10A

    Abstract: UK2996G-TA3-T MOSFET 400V TO-220 UK2996 UK2996L-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM


    Original     		PDF UK2996 O-220 UK2996 O-220F O-220F1 UK2996L-TA3-T UK2996G-TA3-T UK2996L-TF3-T UK2996G-TF3-T UK2996L-TF1-T PN channel MOSFET 10A UK2996G-TA3-T MOSFET 400V TO-220 UK2996L-TA3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM


    Original     		PDF UK2996 O-220 UK2996 O-220F O-220F1 O-220F2 UK2996L-TA3-T UK2996G-TA3-T UK2996L-TF1-T UK2996G-TF1-T

    BUZ72A

    Abstract: TA17401 TB334
    Text: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original     		PDF BUZ72A TA17401. BUZ72A TA17401 TB334

    BUZ71 application

    Abstract: BUZ71 TB334
    Text: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original     		PDF BUZ71 TA9770. BUZ71 BUZ71 application TB334

    2N6784

    Abstract: TB334
    Text: 2N6784 Data Sheet April 1998 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high


    Original     		PDF 2N6784 2N6784 O-205AF TB334

    2N6790

    Abstract: TB334
    Text: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high


    Original     		PDF 2N6790 2N6790 TB334

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Text: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F

    2SK3892

    Abstract: K3892 2sk38
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package


    Original     		PDF 2002/95/EC) 2SK3892 O-220D-A1 2SK3892 K3892 2sk38

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package


    Original     		PDF 2002/95/EC) 2SK3892 O-220D-A1

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK2339 Silicon N-channel power MOSFET • Features Unit: mm ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • Switching mode regulator


    Original     		PDF 2002/95/EC) 2SK2339