pa1437
Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1437
PA1437
PA1437H
IC-3516
pnp DARLINGTON TRANSISTOR ARRAY
IEI-1209
pnp darlington array
IEI-1213
MEI-1202
MF-1134
PA1437H
power transistor array
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Untitled
Abstract: No abstract text available
Text: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220
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TIP120
TIP125
O-220
TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
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fw26025
Abstract: FW26025A FW26025A1 st fw26025a1 MALAYSIA FW26025A1 fw26025a1 "transistor" fw26025a1 equivalent transistor fw26025a1 parameters FW26025A1 P003F
Text: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington
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FW26025A1
FW26025A1
fw26025
FW26025A
st fw26025a1
MALAYSIA FW26025A1
fw26025a1 "transistor"
fw26025a1 equivalent
transistor fw26025a1
parameters FW26025A1
P003F
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fw26025
Abstract: FW26025A fw26025a1 fw26025a1 equivalent MALAYSIA FW26025A1 parameters FW26025A1 st fw26025a1 fw26025a1 "transistor" transistor fw26025a1 ic 351
Text: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington
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FW26025A1
FW26025A1
fw26025
FW26025A
fw26025a1 equivalent
MALAYSIA FW26025A1
parameters FW26025A1
st fw26025a1
fw26025a1 "transistor"
transistor fw26025a1
ic 351
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2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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MJE350
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SC1419
TIP54
MJ1000
MJ15024 MJ15025
2SC1943
SE9302
MJE2482
2SD675
BU326
BU108
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sgs125
Abstract: MOROCCO B 108 B
Text: SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING ■ DESCRIPTION The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in
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SGS125
SGS125
OT-82
MOROCCO B 108 B
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MJ11015
Abstract: No abstract text available
Text: MJ11015 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI MJ11015 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA MAXIMUM RATINGS IE 30 A VCE -120 V
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MJ11015
MJ11015
204AA
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Untitled
Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector
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BDW94/C
BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
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Untitled
Abstract: No abstract text available
Text: 2N7371 Available on commercial versions PNP Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/623 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power PNP transistor is rated at 12 amps and is military qualified up to the JANTXV
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2N7371
MIL-PRF-19500/623
O-254AA
2N7371.
MIL-PRF-19500/623.
T4-LDS-0318,
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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NEC RELAY
Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)
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2SB1465
2SB1465
C11531E)
NEC RELAY
2sb146
NEC RELAY nec 5
C11531E
NEC semiconductor
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Untitled
Abstract: No abstract text available
Text: 2N6298 60 V darlington complementary PNP silicon power transistor 12.35 Transistors . Page 1 of 1 Enter Your Part # Home Part Number: 2N6298 Online Store 2N6298 Diodes 60 Transistors V darlington complementary PNP silicon transistor Integrated Circuits Optoelectronics
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2N6298
2N6298
com/2n6298
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D1486
Abstract: 2SC4342
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SC4342
2SC4342
O-126
D1486
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D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD180
BD179
BD180
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
2SD1816
BDX54
motorola MJ3000
MJD42C equivalent
BU326
BU100
2N5631
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2SC4342
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SC4342 TO-126 (MP-5)
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2SC4342
2SC4342
O-126
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in
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SGS125
SGS125
OT-82
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BC450
Abstract: 5v power transistor
Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage
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BC450
BC450
300mA
625mW
100mA
100MII;
300/iS,
5v power transistor
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Darlington Transistors NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors
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NSG2556
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NSG2556
Abstract: No abstract text available
Text: NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors MAXIMUM RATINGS Rating Collector-Emitter Voltage
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NSG2556
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Untitled
Abstract: No abstract text available
Text: 2N6285 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Am plifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA Ie 2o A 4o A PEAK < o m MAXIMUM RATINGS
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2N6285
204AA
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BC450
Abstract: No abstract text available
Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION i > 4 .6 8 i O J 8 BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage
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BC450
BC450
300mA
625mW
300/iS,
100mA
Nov-97
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Untitled
Abstract: No abstract text available
Text: m 2N6285 \ \ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-3/TO-204AA U \ -J MAX. I MAXIMUM RATINGS 20 A 40 A PEAK
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2N6285
2N6285
O-3/TO-204AA
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS
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BD336
BD336
OT-82
P032A
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