Untitled
Abstract: No abstract text available
Text: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
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PDF
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Si5936DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si5936
Abstract: S12 MARKING CODE DIODE
Text: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
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Original
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PDF
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Si5936DU
Si5936DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
si5936
S12 MARKING CODE DIODE
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Untitled
Abstract: No abstract text available
Text: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
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Original
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PDF
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Si5936DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®
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Original
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PDF
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Si5936DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PowerPAK ChipFET Single
Abstract: No abstract text available
Text: Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK ChipFET® Single 0.225 0.009 0.350 (0.014) 0.650 (0.026) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 0.100 (0.004) 1.500 (0.059) 1.900 (0.075) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014)
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21-Jan-08
PowerPAK ChipFET Single
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Untitled
Abstract: No abstract text available
Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single
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PDF
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Si5415AEDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single
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PDF
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Si5415AEDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single
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Original
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PDF
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Si5415AEDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5415AEDU www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0096 at VGS = - 4.5 V - 25 - 20 0.0132 at VGS = - 2.5 V - 25 0.0220 at VGS = - 1.8 V -7 Qg (Typ.) 43 nC PowerPAK ChipFET Single
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Original
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PDF
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Si5415AEDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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PDF
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Si5418DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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PDF
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Si5418DU
Si5418DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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PDF
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Si5418DU
Si5418DU-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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PDF
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Si5418DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si5418DU-T1-GE3
Abstract: si5418
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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PDF
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Si5418DU
11-Mar-11
Si5418DU-T1-GE3
si5418
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Untitled
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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Original
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PDF
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Si5418DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Si5418DU-T1-GE3
Abstract: No abstract text available
Text: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET
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PDF
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Si5418DU
18-Jul-08
Si5418DU-T1-GE3
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si5429
Abstract: marking G2 Si5429DU
Text: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5429DU
Si5429DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si5429
marking G2
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Untitled
Abstract: No abstract text available
Text: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5429DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5429DU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PowerPAK ChipFET Single
Abstract: No abstract text available
Text: New Product Si5476DU Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 60 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 Qg (Typ.) 10.5 nC PowerPAK ChipFET Single 1 2 3 D D Lot Traceability and Date Code 4 G
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PDF
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Si5476DU
Si5476DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
PowerPAK ChipFET Single
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Si5485DU
Abstract: Si5485DU-T1-GE3
Text: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5485DU
Si5485DU-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5485DU
Si5485DU-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5485DU
Si5485DU-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Original
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PDF
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Si5484DU
Si5484DU-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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