2N5289
Abstract: 2N5330 2N5157 2N5202 2N5218 2N5237 2N5238 2N5239 2N5240 2N5241
Text: •■ l u PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST I p. 14 561-848-9606 FAX: 561-848-1607 This Material Copyrighted By Its Respective Manufacturer 800-327-3242
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2N5157
2N5202
2N5218
2N5237
2N5238
2N5239
2N5240
2N5241
2N5250
O-114
2N5289
2N5330
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PPC2228
Abstract: PPC2229
Text: P P C 45E D PRODUCTS CORP • •4 bflSblll OOQOTia 7 ■ PPC NPN Power Da . Transistor PC2229 r-33-2^ C H IP TYPE: AU FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal
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PPC2229
PPC2228
T-33-29
PPC2228
PPC2229
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PPR1356
Abstract: PPR1357 PPR1358 PPR1359 voltage regulators 300v dc max ppc products corp
Text: P P C PRO] PRODUCTS CORP CHJ bDE D b fis b n i n s qoqotms « ppc High Efficiency, 30A Center-Tap Diodes PPR1356 PPR1357 PPR1358 PPR1359 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1356 200V • Very Fast Switching Speed
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PPR1356
PPR1357
PPR1358
PPR1359
T0-204AA
50/xA
voltage regulators 300v dc max
ppc products corp
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2C4300
Abstract: 2C5333 chip die npn transistor
Text: P P C PRODUCTS CORP bDE D • b flS b m □DOO'ìba 1GG W PPC PNP Power Transistor Chips 2C5333 FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal
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2C5333
2C4300
2C5333
2C4300
chip die npn transistor
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PPR1315
Abstract: ppc 1n5816 1N665 1N666 1N5812 1N5813 1N5814 1N5815 1N5816 PPR1291
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST • ULTRA-FAST RECTIFIERS NUMBER O F DIE CASE VR VF IO Trr M AX Trr CONDITIONS 1N5812 SINGLE DO-4 50 0.9 10 35 A 1N5813 SINGLE DO-4 75 0.9 10 35 A 1N5814 SINGLE DO-4 100 0.9 10 35 A 1N5815 SINGLE DO-4 125 0.9
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1N5812
1N5813
1N5814
1N5815
1N5816
O-257
1N666
PPR1315
ppc 1n5816
1N665
PPR1291
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lc 5013
Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
Text: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal
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2C5012
2C5014
2C5013
2C5015
2C5015
50/ia
lc 5013
LE50
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PPC PRODUCTS CORP
Abstract: PPRC1378 PPRC1379 PPRC1380 PPRC1381
Text: P P C PRODUCTS CORP PPRC1378 PPRC1379 45E • D oo oim b ■ e ppc L< 2 ftM jp t;U l l i " : PPRC1380 PPRC13ei m m -,: -T'03-15 CHIP TYPE: RH FEATURES • Chip O utline Dimensions: 41 x 41 mils • Chip Thickness 8 to 12 mils • Anode M etallization: A lum inum
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pprci378
pprci38o
PPRC1379
PPRC1381
T-03-/5
PPRC1378
PPRC1379
PPRC1380
PPRC1381
25Area:
PPC PRODUCTS CORP
PPRC1380
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2C2151
Abstract: 120VDC
Text: P P C PRODUCTS bOE CORP ¡ PPC D 5-A NPN Power Transistor Chips 2C2151 pp Vs-oi FEATURES CHIP TYPE: AN • Epitaxial, Planar Design • C ontact M etallization: Base, Em itter - Alum inum - 30,000 A Nominal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 1 0 Mils N om inal
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30Vdc,
300/xs,
2C2151
120VDC
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2C2151
Abstract: 120VDC
Text: PPC PRODUCTS CORP LOE D • b flS b lT l ODDD^bl 336 M P P C 5-A Transist ^S^H W ÊtÊtk 2C2151 1 " 'T FEATURES ^ 3 -o l CHIP TYPE: AN • Epitaxial, Planar Design • C ontact M etallization: Base, Em itter - Alum inum - 30,000 A Nom inal C ollector - Gold - 3,000 A Nom inal
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2C2151
30Vdc,
300/xs,
rida33404
2C2151
120VDC
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2n6324
Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6325 2N6326 2N6327
Text: ^ 1 1 * II BR EAKDON /VIM V OLTAGE S hrE SAI VOLTA kGES <M ax. * < n —' m NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST <C A) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2 2 2N6281 TO-63 180 150 6 4 20 30 120 20 2 1.2 2 2N6315 TO-66 60 60
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2N6280
2N6281
2N6315
2N6316
2N6322
2N6323
2N6324
2N6325
2N6326
2N6327
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2N5684
Abstract: 2N5867 2N5613 PPC 2n5683 2N5678 2N5680 2N5872 2N5615 2n5683 2N5619
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST PNP DEVICE BRIEAKDOV m V O LTAGE s SAT . V O LTA GES M 3 X . hF:E 'c (A) 2.5 Min. Max. 5.5 V CE (V) 5 70 80 5.5 5 2.5 100 80 5.5 5 TO-3 120 100 5.5 2N5621 TO-3 80 60 2N5623 TO-3 100 2N5625 TO-3 2N5627 200
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2N5613
2N5615
2N5617
2N5619
2N5621
2N5623
2N5625
2N5627
2N5677
2N5678
2N5684
2N5867
PPC 2n5683
2N5680
2N5872
2n5683
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2N5349
Abstract: 2N5542 PPC Products 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348
Text: M | II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREAKDOWN VOLTAGES SAT. VOLTAGES Max.) 'c M in . M ax. 'b (A) V CE V BE (A) (V) \v i n (V) 'C (A) 2N 5336 TO -39 80 80 6 2 2 30 120 2 0.5 1.2 2 2N 5337 TO -39 80 80 6 2 2 60 240 2 0.5 1.2 2 2N 5338
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2N5336
2N5337
2N5338
2N5339
2N5346
O-59/I
2N5347
2N5348
2N5349
2N5542
PPC Products
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2N5239
Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251
Text: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50
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2N5157
2N5202
2N5218
2N5237
2N5238
2N5239
2N5240
2N5241
2N5250
O-114
2N5251
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2N6562
Abstract: 2N6583 2N6560 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546
Text: C 1IP 1 PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN V OLTAGE S NPN SAT . VO LTA GES M ax. h F: E CASE V CB V CE V EB V CE (V) 'c (A) M in . Max. >C (A) 'b (A) V CE (V) V BE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400
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2N6512
2N6513
2N6514
2N6542
2N6543
2N6544
2N6546
2N6547
2N6560
2N6561
2N6562
2N6583
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2N5051
Abstract: 2N5085 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5038 2N5039
Text: v i p Il PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREAKDOWN h FE SAT. V O L T A G E S M ax. >c M in . M ax. 'b (A) V CE (A) (V) V BE (V) TO-5 500 500 5 10 0.025 30 180 0.025 0.005 1.4 1 2N5011 TO-5 600 600* 5 10 0.025 30 180 0.025 0.005 1.5 1 2N5012
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2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5038
2N5039
2N5048
2N5049
2N5051
2N5085
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2N5969
Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20
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2N5876
2N5879
2N5880
2N5883
2N5884
2N5954
2N5955
2N5956
2N5958
2N5960
2N5969
2n6182
2N6031
i8080
2N6030
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2n60n
Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80
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2N5968
O-63/I
2N5970
2N6032
2N6033
2N6046
2N6047
2N6060
2N6062
2n60n
2N6235
2N6078
2N6215
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2N3627
Abstract: 2N3598 2N3599 2N3619 2N3620 2N3621 2N3623 2N3628 2N3629 2N3630
Text: BRE A K D O V VN V DLTAGE S hFE SAT O > • GES (M.iX. CASE V CB V CE V EB V CE (V) (A) M in. Max. (A) < NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST VŒ (V) 2N3598 TO-63 80 60 8 2 10 40 120 10 1 0.5 V BE (V) 2 2N3599 TO-63 100 80 8 2 10 40
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2N3598
2N3599
2N3619
2N3620
2N3621
2IM3622
2N3623
2N3627
2N3628
2N3629
2N3630
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2N2646 TO-92
Abstract: transistor 2n4852 transistor 2n4871 2n4871 2N4852 2n2646 package 2N2647 TO-92 2N4853 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 transistor 2N2646
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST \ _ S u rfa ce M o u n t D evices v* ceo suit (Volts) M in NPN 40 MMBT3904 D evice PIMP MMBT3906 MMBT4401 MMBT4403 fT @l c »c »c Im A I M a x M in M ax mA p NF (dB) (M Hz) M ax M in m A Package r D <A m bi
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MMBT3904
O-236
MMBT3906
MMBT4401
MMBT4403
2N2646
2N4851
2N2646 TO-92
transistor 2n4852
transistor 2n4871
2n4871
2N4852
2n2646 package
2N2647 TO-92
2N4853
2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853
transistor 2N2646
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2N6673
Abstract: 2N6546 2N6560 2N6583 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544
Text: H P II NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREEAKDOV VN V OLTAGE S SAT . V O LTA GES M<ax. h F:E 'c Max. >C (A) 'b (A) V CE (V) V BE (V) CASE V CB V CE V EB VCE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400 350
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2N6512
2N6513
2N6514
2N6542
2N6543
2N6544
2N6546
2N6547
2N6560
2N6561
2N6673
2N6583
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2N6328
Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6324 2N6325 2N6326
Text: v i p Il PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR EA K D O V /VN V OLTAGE S NPN DEVICE CASE h F: E V CB VCE V EB V CE V SAT . V O L T A GES ( M ax.) 'c 'c (A) M in . Max. (A) ]B (A) V CE (V) V BE (V) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2
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2N6280
2N6281
2N6315
2N6316
2N6322
2N6323
2N6324
2N6325
2N6326
2N6327
2N6328
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2N2102A
Abstract: 2n1506 2n1714 2N1904 2N1716 2N1209 2N1212 2N1479 2N1480 2N1481
Text: VI P II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR E A K D O \ A/N V OLTAGE S NPN DEVICE CASE h FE V CB V CE V EB V CE V SAI r. V O L T / 5Æ ES ( M ax.) 'c 'c (A) M in . Max. (A) 'b (A) V CE (V) V BE (V) 2N1209 TO-61 45 45 5 12 2 20 80 2 0.25
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2N1209
2N1212
2N1479
2N1480
2N1481
2N1482
2N1483
2N1485
2N1486
2N1487
2N2102A
2n1506
2n1714
2N1904
2N1716
2N1209
2N1212
2N1479
2N1480
2N1481
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2N7368
Abstract: 2N7373 2N7376 2N6686 2N6688 2N6678 2N6687 2N6689 2N6690 2N6691
Text: v l r II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST LU LL _c BREAKDOWN VOLTAGES NPN SAT. V O L T A G E S M a x . ) 650 400 8 3 15 8 2N 6686 T 0 -3 260 160 8 2 10 25 100 10 2.5 1.5 2 2N 6687 TO-3 280 180 8 2 10 25 100 10 2.5 1.5 2 2N 6688 TO-3 300
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2N6678
2N6686
2N6687
2N6688
2N6689
O-61/1
2N6690
2N6691
2N6692
2N7368
2N7373
2N7376
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n4111
Abstract: 2N4211 2N3920 2N4116 2N4111 2N3851 2N3852 2N3853 2N3878 2N3879
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST 100 2N 3852 TO-59 60 2N 3853 TO-59 2N 3878 SAT. VOLTAGES Max. 'c V CE (A) V BE (A) (V) (V) 80 5 1 1 30 90 1 0.2 0.5 2 40 5 1 1 50 150 1 0.2 0.5 1 60 40 5 1 1 30 90 1 0.2 0.5 1 TO-66 120 50 7 5 0.5 50 200
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2N3851
2N3852
2N3853
2N3878
2N3879
2N3902
2N3917
2N3918
2N3920
2N3928
n4111
2N4211
2N4116
2N4111
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