PPD23C2000 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
UPD23C2000 Abstract: No abstract text available Text: JJPD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e fiP D 23 C 2 000 is a 2,097,152-bit ROM fab ricated w ith C M O S silicon-gate technology. Th e device is static in operation and ca n be organized as 131,072 w ords by 16	OCR Scan	PDF	uPD23C2000 152-Bit JJPD23C2000
UPD23C2000 Abstract: 33AO nec 40-pin plastic dip Text: N Hi fiPD23C2000 2,097,152-Bit Mask-Programmable CMOS ROM Description Pin Configurations Th e ftP D 23 C 200 0 is a 2,097,152-bit ROM fab ricated with C M O S siiicon-gate technology. T h e device is static in operation and can be organized as 131,072 w ords by 16	OCR Scan	PDF	uPD23C2000 152-Bit PD23C2000 fPD23C2000 pPD23C2000 33AO nec 40-pin plastic dip
al 232 nec Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258	OCR Scan	PDF	KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
UPD23C2000 Abstract: No abstract text available Text: p PD 2 3C 200 0A NEC 2,097,152-Blt Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The /iPD23C2000A is a 2,097,152-bit ROM fabricated with CMOS silicon-gate technology. This device is static in operation and can be organized as 131,072 words by	OCR Scan	PDF	152-Blt 40-Pin uPD23C2000A 152-bit PD23C2000A iPD23C2000A-1 iPD23C2000A 000A-1 UPD23C2000