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    PREAMPLIFIER 2.4 GHZ TRANSISTOR Search Results

    PREAMPLIFIER 2.4 GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PREAMPLIFIER 2.4 GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T2901

    Abstract: ramp generator 555 GFSK 2369 E7 T7024 smc air filter regulator HP-VFQFP-N48
    Text: T2901 Bluetooth Single-Chip Transceiver IC Description The T2901 is an RF-IC intended for Bluetooth applications in the 2.4 GHz to 2.5 GHz ISM band. The HP-VFQFP-N48 packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,


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    PDF T2901 T2901 HP-VFQFP-N48 D-74025 04-Dec-00 ramp generator 555 GFSK 2369 E7 T7024 smc air filter regulator

    K2750

    Abstract: uln 2007 BFR740L3 ultra Low Noise ULN types preamplifier 2.4 ghz
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 3 D u a l - B a n d / B r o a d b an d F ee d b a c k L ow N oi s e A m p l i f i e r f or < 2 . 4 G H z t o 6 G H z i n c l us i v e , u s i n g t h e U l t r a L o w N oi s e B F R 74 0 L 3 S i G e : C T r a n s i s t o r


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    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


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    PDF BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1

    1658 NEC

    Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • Fully Integrated Low IF Receiver Fully Integrated GFSK Modulator for 72, 144, 288, 576 and 1152 kBit/s High Sensitivity of Typically -93 dBm Due to Integrated LNA High Output Power of Typically +4 dBm Multi-channel Operation


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    PDF QFN32 ATR2406 4779B

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-voltage frequency synthesizer for radio telephones UMA1019M The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply


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    PDF UMA1019M

    TDA5737 application note

    Abstract: 714 diode varicap tv main board schematic diagram philips AN00074 TSA5060A TDA5060A voltage controlled oscillator ic 555 TDA5737 TP97036 voltage controlled oscillator using ic 555
    Text: APPLICATION NOTE - TSA5060A TERRESTRIAL LOW-NOISE PLL DEMONSTRATION BOARD AN00074 VERSION 1.0 Philips Semiconductors TP97036.2/W97 TRAD Philips Semiconductors - TSA5060A DEMONSTRATION BOARD Application Note AN00074 Purchase of Philips I2C components conveys a


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    PDF TSA5060A AN00074 TP97036 2/W97 TDA5737 application note 714 diode varicap tv main board schematic diagram philips AN00074 TDA5060A voltage controlled oscillator ic 555 TDA5737 voltage controlled oscillator using ic 555

    S5 100 B112 MT RELAY

    Abstract: konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific
    Text: Test & Measurement Catalog 2015 Chapter Contents Page Company profile ❙❙ Our business fields and products 2 1 Aerospace and defense test solutions ❙❙ Radar test systems ❙❙ ILS test system 6 2 Wireless ­communications testers and systems ❙❙ Wireless device testers


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    PDF ZV-Z170/-Z135/-Z129 ZN-Z15x S5 100 B112 MT RELAY konica IR sensor DVB-T Schematic set top box MIL-STD-291C Digital Panel Meter PM 428 S5 100 B112 RELAY DVB-C receiver schematic diagram service manual tv seg pacific

    transistor C4

    Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
    Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;


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    PDF BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier

    K 2475

    Abstract: K2650 K2275 K2475 k 3525 K 2925 BFR740L3 k 3275 Miteq K2375
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 5 D u a l - B a n d , L o w N o i s e A m p l i fi e r f o r 2 . 4 - 2 . 5 & 4 . 9 6 G H z B a n d s u s i n g t h e U l t r a L o w N o i s e B F R 74 0 L 3


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    Nelco 4000-13

    Abstract: 2482 regulator SIEMENS epcos regulator VOLtage regulator 2482 2482 TRANSISTOR led 3w ATR2406 BC808 BC808-40 C1206
    Text: Features • • • • • • • • • • • Fully Integrated Low IF Receiver Fully Integrated GFSK Modulator for 72, 144, 288, 576 and 1152 kBit/s High Sensitivity of Typically -93 dBm Due to Integrated LNA High Output Power of Typically +4 dBm Multi-channel Operation


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    PDF QFN32 4779D Nelco 4000-13 2482 regulator SIEMENS epcos regulator VOLtage regulator 2482 2482 TRANSISTOR led 3w ATR2406 BC808 BC808-40 C1206

    BFR740L3RH

    Abstract: uln 2007 FSEM30 6723 transistor 20 dB 2400 mhz LNA 600 MHZ CIRCUIT ultra Low Noise ULN types
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 2 W i de b a n d L N A fo r 2 0 0 M H z t o 6 G H z a p p l i c a ti o n s w i t h B F R 7 4 0 L3 R H R F & P r o t e c ti o n D e v i c e s Edition 2007-08-14


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    PDF BFR740L3RH BFR740L3RH uln 2007 FSEM30 6723 transistor 20 dB 2400 mhz LNA 600 MHZ CIRCUIT ultra Low Noise ULN types

    RF transmitter and Receiver for RC toys

    Abstract: 8 channel RF transmitter and Receiver circuit for RC toys led 3w QFN32 5x5 package SIEMENS epcos regulator ATR2406 BC808 BC808-40 C1206 CFR47
    Text: Features • • • • • • • • • • • Fully Integrated Low IF Receiver Fully Integrated GFSK Modulator for 72, 144, 288, 576 and 1152 kBit/s High Sensitivity of Typically -93 dBm Due to Integrated LNA High Output Power of Typically +4 dBm Multi-channel Operation


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    PDF QFN32 4779C RF transmitter and Receiver for RC toys 8 channel RF transmitter and Receiver circuit for RC toys led 3w QFN32 5x5 package SIEMENS epcos regulator ATR2406 BC808 BC808-40 C1206 CFR47

    2450 MHz low noise amplifier schematic

    Abstract: BFP405F SMA pcb footprint Connector
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 7 Low Cost 3 - 4 GHz UWB Low Noise Amplifier u s i n g th e B F P 4 0 5 F c o n s u m e s o n l y 2 m A fr o m a 1.5 V Power Supply R F & P r o t e c ti o n D e v i c e s


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    PDF BFP405F 2450 MHz low noise amplifier schematic SMA pcb footprint Connector

    MMIC SOT 363 marking CODE 77

    Abstract: SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 W • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


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    PDF P-SOT363-6-1 Q62702 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86

    MMIC SOT 363 marking CODE 77

    Abstract: SMD Transistor Marking Code 71 SOT 23 SOT363-6 TRANSISTOR SMD CODE 6.8 MMIC SOT 363 marking CODE 82 y5s 0.022 SOT 363 marking code 62 low noise 59w smd smd marking code vd VD F1 SMD
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 Ω • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


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    PDF P-SOT363-6-1 Q62702 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 SMD Transistor Marking Code 71 SOT 23 SOT363-6 TRANSISTOR SMD CODE 6.8 MMIC SOT 363 marking CODE 82 y5s 0.022 SOT 363 marking code 62 low noise 59w smd smd marking code vd VD F1 SMD

    MMIC SOT 363 marking CODE 77

    Abstract: MARKING CODE SMD IC 307 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 SOT 363 marking code 62 low noise MMIC SOT 363 marking CODE 06 MMIC SOT 563 marking CODE 22 MMIC SOT 363 marking CODE 82 306 marking code transistor smd transistor code 314
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 Ω • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


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    PDF P-SOT363-6-1 Q62702 P-SOT363-6-1 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 MARKING CODE SMD IC 307 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 SOT 363 marking code 62 low noise MMIC SOT 363 marking CODE 06 MMIC SOT 563 marking CODE 22 MMIC SOT 363 marking CODE 82 306 marking code transistor smd transistor code 314

    AT 2313

    Abstract: BFP640 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 0 T h e S i G e B F P 6 4 0 a s a 2 .4 G H z L o w N o i s e Amplifier LNA R F & P r o t e c ti o n D e v i c e s Edition 2007-11-07 Published by Infineon Technologies AG


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    PDF BFP640 AT 2313 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram

    BFG505

    Abstract: No abstract text available
    Text: Philips Semiconductors Low noise, low current preamplifier for 1.9 GHz at 3 V Application report In this short note some results o f measurements are derscribed performed on a LNA for the 1.8 - 2.0 GHz frequency range. The am plifier is build with a low cost bipolar transistor on a low cost epoxy PCB.


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    PDF BFG505 BFG505

    d427 transistor

    Abstract: D427 BFG505
    Text: Philips Semiconductors Low noise, low current preamplifier for 1.9 GHz at 3 V Applicat.on report In this short note some results of measurements are derscribed performed on a LNA for the 1.8 - 2.0 GHz frequency range. The amplifier is build with a low cost bipolar transistor on a low cost epoxy PCB.


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    PDF BFG505 d427 transistor D427 BFG505

    UKA897

    Abstract: UMA1019M
    Text: Preliminary specification Philips Semiconductors Low-voltage frequency synthesizer for radio telephones operate from 3 NiCd cells, in pocket phones, with low current mid nominal 5 V supplies. FEATURES • Low current from 3 V supply • Fully programmable RF divider


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    PDF UMA1019M UMA1019M 7110fl2b 00S437T 7110fiat, UKA897

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low-voltage frequency synthesizer for radio telephones UMA1019M The device is designed to operate from 3 NiCd cells, In pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V supply


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    PDF UMA1019M

    ldbcp

    Abstract: IC TX-2 T7024 T7024-LSQ T7024-LSS 2.tx transistor
    Text: Tem ic T7024 S e m i c o n d u c t o r s ISM 2.4 GHz Front End IC Description The T7024 is a monolithic SiGe transmit/ receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth and DECT. Due to the


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    PDF t7024 T7024 ct-99 PSS020 ldbcp IC TX-2 T7024-LSQ T7024-LSS 2.tx transistor

    Untitled

    Abstract: No abstract text available
    Text: O b f*c tlv * pacification P h ilip * Sem iconductor* RF Com m unication* Product* Low-power dual frequency synthesizer for radio communications UMA1015M FEATURES GENERAL DESCRIPTION • Two fully programmable RF dividers up to 1.1 GHz The UMA1015M is a low-power dual frequency


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    PDF UMA1015M UMA1015M