Untitled
Abstract: No abstract text available
Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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OT-353
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SOT-353 Q2
Abstract: SOT353 footprint
Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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OT-353
SOT-353 Q2
SOT353 footprint
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Untitled
Abstract: No abstract text available
Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Untitled
Abstract: No abstract text available
Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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OT-353
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Untitled
Abstract: No abstract text available
Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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OT-353
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Untitled
Abstract: No abstract text available
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
1050mA
TGA4516
0007-inch
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Untitled
Abstract: No abstract text available
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
TGA4516
TGA45cal
0007-inch
TGA4516-TS
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ka band gaas fet Package
Abstract: TGA4516 ka-band amplifier AMC8515
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
TGA4516
1050mA
ka band gaas fet Package
ka-band amplifier
AMC8515
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with
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A016 SMD
Abstract: M8340102K smd marking code A008 smd A018 MDP1603 a015 SMD AC 31061 10k resistor array SIP a014 SMD transistor a015 SMD
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book rEsIStor ARRays and Networks vishay DALE vsD-db0011-0410 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0011-0410
A016 SMD
M8340102K
smd marking code A008
smd A018
MDP1603
a015 SMD
AC 31061
10k resistor array SIP
a014 SMD
transistor a015 SMD
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philips kt-347
Abstract: philips kt Philips KT capacitors DR03111 philips 347 KT
Text: Philips Components Product specification Polyester film capacitors KT 347 KT RADIAL PHENOLIC LACQUERED CAPACITORS PITCH 10/15/22.5/27.5 mm handbook, 2 columns DR03101 Fig.1 Simplified outline. FEATURES • Low-inductive wound cell of metal foil and a polyethylene
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DR03101
philips kt-347
philips kt
Philips KT capacitors
DR03111
philips 347 KT
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with
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IC 4050 DATA SHEET
Abstract: SOT-353 transistor marking T2
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with
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IC 4050 DATA SHEET
SOT-353
transistor marking T2
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: us1j-e3 US1M MARKING CODE us1jhe3 MARKING CODE TL DO-214AC JESD22-B102 J-STD-002 US1J-E361T us1m vishay PREFERRED PACKAGE CODE um
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
GENERAL SEMICONDUCTOR MARKING UJ SMA
us1j-e3
US1M MARKING CODE
us1jhe3
MARKING CODE TL DO-214AC
JESD22-B102
J-STD-002
US1J-E361T
us1m vishay
PREFERRED PACKAGE CODE um
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with
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GENERAL SEMICONDUCTOR MARKING UJ SMA
Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
03-Jul-06
GENERAL SEMICONDUCTOR MARKING UJ SMA
US1J-E3/5AT
us1m datasheet
us1m vishay
GENERAL SEMICONDUCTOR MARKING UM
US1J-E3/61T
JESD22-B102D
J-STD-002B
us1g vishay
RECTIFIER marking UG 08
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4J52
Abstract: S1300 transistor
Text: HEWLETT UM P A C K A R D pe*4' Optical Reflective Sensors Technical Data HEDS-1200 High R esolution Infrared Sensor HEDS-1300 Precision R esolution Sensor Features Description • Focused E m itter and D etector in a Single Package • TOS Package • B inning o f S ensors by
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HEDS-1200
HEDS-1300
4J52
S1300 transistor
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM FEATURES 60 M Hz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse Width: <5 ns Maxim um PW: 100 % Full-scale APPLICATIO NS Laser Printers
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AD9561
AD9561
AD9561.
28-Lead
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Lem LT 300 - t
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers
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OCR Scan
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PDF
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AD9561
AD9561
AD9561/PCB
28-Lead
Lem LT 300 - t
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EPROM 27128
Abstract: 27128 eprom 27128 block diagram 27128 ROM pin configuration 27128 pin configuration 27128 pin diagram S23128 S23128B S23128C S23128I
Text: 128K Bit 16K X 8 Static NMOS ROM •> GOULD Electronics S23128 Features □ Fast Access Time: S23128B-250ns (0°C to +70°C) Maximum S23128C-200ns (0°C to +70°C) Maximum S23128l-300ns (— 40°C to +85°C) Maximum S23128M-300ns (-5 5 °C to +125°C) Maximum
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S23128
S23128B-250ns
S23128C-200ns
S23128l-300ns
S23128M-300ns
110mW
S23128
100pF
28-Pin
EPROM 27128
27128 eprom
27128 block diagram
27128 ROM pin configuration
27128 pin configuration
27128 pin diagram
S23128B
S23128C
S23128I
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