PROPERTIES OF TRANSISTOR PNP Search Results

PROPERTIES OF TRANSISTOR PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

PROPERTIES OF TRANSISTOR PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
300W TRANSISTOR AUDIO AMPLIFIER Abstract: MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R Text: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R • TO-3P Plastic Package • Complimentary PNP – MG9411 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package	Original	PDF	MG6331, MG6331-R MG9411 MG6331 300W TRANSISTOR AUDIO AMPLIFIER MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R
300W TRANSISTOR AUDIO AMPLIFIER Abstract: "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331 Text: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R • TO-3P Plastic Package • Complimentary NPN – MG6331 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package	Original	PDF	MG9411, MG9411-R MG6331 MG9411 -230V -260V SymMG9411 300W TRANSISTOR AUDIO AMPLIFIER "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331
200w silicon audio power transistor Abstract: "PNP Transistor" 200W TRANSISTOR AUDIO AMPLIFIER MG6330 mg9410 230v 4A pnp MG9410-R PNP EPITAXIAL SILICON TRANSISTOR 5A PNP Transistor 1455 Text: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R • TO-3P Plastic Package • Complimentary NPN – MG6330 • Designed specifically for audio power amplifier applications • High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	MG9410, MG9410-R MG6330 MG9410 -230V -260V 200w silicon audio power transistor "PNP Transistor" 200W TRANSISTOR AUDIO AMPLIFIER MG6330 mg9410 230v 4A pnp MG9410-R PNP EPITAXIAL SILICON TRANSISTOR 5A PNP Transistor 1455
MG6330 Abstract: MG6330-R 200W TRANSISTOR AUDIO AMPLIFIER MG9410 1455 npn 200w LE17 200w silicon audio power transistor mg6330r audio output TRANSISTOR NPN Text: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6330, MG6330-R • TO-3P Plastic Package • Complimentary PNP – MG9410 • Designed specifically for audio power amplifier applications • High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	MG6330, MG6330-R MG9410 MG6330 MG6330 MG6330-R 200W TRANSISTOR AUDIO AMPLIFIER MG9410 1455 npn 200w LE17 200w silicon audio power transistor mg6330r audio output TRANSISTOR NPN
Untitled Abstract: No abstract text available Text: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage	Original	PDF	2N3963 -200mA 06mW/Â 86mW/Â 300us, O-206AA)
2N3963 Abstract: No abstract text available Text: SILICON PNP TRANSISTOR 2N3963 • General Purpose PNP Silicon Transistor • Low Power Amplifier Applications • Hermetic TO18 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Collector – Base Voltage	Original	PDF	2N3963 -200mA 300us, O-206AA) 2N3963
2N5415 Abstract: No abstract text available Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO	Original	PDF	2N5415CSM4 2N5416CSM4 2N5415 -200V 2N5416 -350V -300V 2N5415CSM4,
2N4209 Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209 • Hermetic TO18 Metal Package • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	2N4209 -50mA 360mW 05mW/Â 3801s, O-206AA) 2N4209
2N5415 Abstract: No abstract text available Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO	Original	PDF	2N5415CSM4 2N5416CSM4 2N5415 -200V 2N5416 -350V -300V Ambien15CSM4 2N5415
Untitled Abstract: No abstract text available Text: HIGH SPEED SWITCHING PNP SILICON BIPOLAR TRANSISTOR 2N4209 • Hermetic TO18 Metal Package • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	2N4209 -50mA 360mW 05mW/Â O-206AA)
Untitled Abstract: No abstract text available Text: SILICON PNP TRANSISTOR 2N3637 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	2N3637 -175V 71mW/Â O-205AD)
Untitled Abstract: No abstract text available Text: SILICON PNP TRANSISTOR 2N3634 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	2N3634 -140V O-205AD)
Untitled Abstract: No abstract text available Text: SILICON PNP TRANSISTOR 2N3634 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	PDF	2N3634 -140V 71mW/Â O-205AD)
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PNP TRANSISTOR BFT61 • Hermetic TO-39 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO	Original	PDF	BFT61 800mW O-205AD)

Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO	Original	PDF	BDX14A O-213AA)
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO	Original	PDF	BDX14A O-213AA)
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PNP TRANSISTOR BFT61 • Hermetic TO-39 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO	Original	PDF	BFT61 800mW O-205AD)
Untitled Abstract: No abstract text available Text: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a	OCR Scan	PDF	BFQ253; BFQ253A BFQ233 BFQ253 0D3173T
philips bfq Abstract: BFQ253A BFQ233 BFQ233A BFQ253 Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a	OCR Scan	PDF	03173b BFQ253; BFQ253A BFQ233 BFQ233A fcj53131 BFQ253A philips bfq BFQ253
1Ft TRANSISTOR Abstract: properties of transistor pnp transistor 1FT BFQ233 BFQ253 ccb transistor Text: Philips Components _ A PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down	OCR Scan	PDF	BFQ253 BFQ233. 1Ft TRANSISTOR properties of transistor pnp transistor 1FT BFQ233 BFQ253 ccb transistor
Untitled Abstract: No abstract text available Text: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and	OCR Scan	PDF	BFQ254; BFQ254/I OT172A1 OT172A3 BFQ254 bbS3T31 MB3693 MEA335
BFQ254 Abstract: BFQ234 UBB692 sot172a3 Text: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,	OCR Scan	PDF	33-/Z BFQ254; BFQ254/I 711062b D045b3D OT172A1 OT172A3 BFQ254 OT172A1) BFQ254/I BFQ234 UBB692 sot172a3
motorola transistor 5331 Abstract: BFQ254 BFQ234 Text: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and	OCR Scan	PDF	00317m BFQ254; BFQ254/1 OT172A1 OT172A3 BFQ254 OT172A1) BFQ254/I 0Q3174M motorola transistor 5331 BFQ234
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers	OCR Scan	PDF	DD315 BFQ54T BFQ34T. 0031ST4 BB339

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PROPERTIES OF TRANSISTOR PNP Search Results

PROPERTIES OF TRANSISTOR PNP Result Highlights (5)

PROPERTIES OF TRANSISTOR PNP Datasheets Context Search

300W TRANSISTOR AUDIO AMPLIFIER

300W TRANSISTOR AUDIO AMPLIFIER

200w silicon audio power transistor

MG6330

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2N3963

2N5415

2N4209

2N5415

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philips bfq

1Ft TRANSISTOR

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BFQ254

motorola transistor 5331

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