2N3904
Abstract: 2N3906 MJE170 MJE180 SPT205AIH SPT205AMH SPT205 2N3904 RN CLC205
Text: OVERDRIVE-PROTECTED WIDEBAND OP AMP The SPT205 is a wideband overdrive-protected operational amplifier designed for applications needing both speed and low power operation. Utilizing a well-established current feedback architecture, the SPT205 exhibits performance far beyond that
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SPT205
170MHz
570mW
SPT205
2N3904
2N3906
MJE170
MJE180
SPT205AIH
SPT205AMH
2N3904 RN
CLC205
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: BUK856-400 BUK856-400IZ igbt philips
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope,
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BUK856-400
O220AB
D 400 F 6 F BIPOLAR TRANSISTOR
BUK856-400IZ
igbt philips
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Eecr1
Abstract: BUK856-400 BUK856-400IZ igbt philips 3050v
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT BUK856-400 IZ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope,
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BUK856-400
O220AB
Eecr1
BUK856-400IZ
igbt philips
3050v
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TEMPFET
Abstract: mosfet protection circuit diagram mosfet controlled thyristor BTS 130
Text: S TEMPFET Temperature Protected FET The TEMPFET is an n- or p-channel power MOSFET with an integral temperature sensor in chip-on-chip technology. lt is protected against overtemperature and short-circuit. Excessive heating of the power transistor being used as a short-circuit indicator.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET, Rev. D 28 VDC SOLID STATE HIGH SIDE 53248 SELF-PROTECTED POWER CONTROLLER Features: • Isolated Controls • Isolated Status Outputs • Fully Protected Thermal Shutdown Undervoltage & Overvoltage Shutdown with Auto-Restart Current Limitation
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BUK856-400IZ
Abstract: TP500
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for
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OT404
BUK866-400
BUK856-400IZ
TP500
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BUK856-400IZ
Abstract: PMG35A buk866
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for
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OT404
BUK866-400
BUK856-400IZ
PMG35A
buk866
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SINCERA 140
Abstract: SINCERA VARISTOR 391 varistor 241K
Text: Thermally Protected Varistors WORLD PRODUCTS INC. ELECTRONIC COMPONENT SOLUTIONS THERMALLY PROTECTED VARISTORS AUTOMOTIVE INDUSTRIAL TELECOM POWER SUPPLY SURGE PROTECTION World Products Inc. 19654 Eighth Street East, Sonoma, CA 95476 | Phone 707 996-5201 | Fax (707) 996-3380 | www.worldproducts.com
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Untitled
Abstract: No abstract text available
Text: VNQ6004SA-E Quad-channel high-side driver with 16-bit SPI interface Datasheet - production data – Reverse battery protected through power outputs self turn-on no external components – Load dump protected – Protection against loss of ground PSSO36 Description
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VNQ6004SA-E
16-bit
PSSO36
DocID022315
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TFA1138T
Abstract: 1138T Megaxess frankfurt
Text: Preliminary Technical Data TFA1138T Edition 10/00 1.5A High-Side Switch Short Description Features The TFA1138T is a protected power switch for grounded loads that consists of 5V-logic compatible control input, a charge pump and a protected N-channel MOSFET.
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TFA1138T
TFA1138T
1138T
Megaxess
frankfurt
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Untitled
Abstract: No abstract text available
Text: DATASHEET ±16.5kV ESD Protected, +125°C, 3.0V to 5.5V, SOT-23/TDFN Packaged, Low Power, RS-485/RS-422 Transmitters ISL3293E, ISL3294E, ISL3295E ISL3296E, ISL3297E, ISL3298E The Intersil ISL3293E, ISL3294E, ISL3295E, ISL3296E, ISL3297E, ISL3298E are ±16.5kV HBM ESD Protected 7kV
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OT-23/TDFN
RS-485/RS-422
ISL3293E,
ISL3294E,
ISL3295E
ISL3296E,
ISL3297E,
ISL3298E
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5N602
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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BUK856-400IZ
T0220AB
BUK856-400IZ
5N602
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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BUK856-400IZ
T0220AB
BUK856-400
Tp125
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BUK856-4001Z
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-4001Z Protected Logic-Level IGBT_ _ _ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power
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BUK856-4001Z
T022QAB
BUK856-400
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level Insulated gate bipolar power
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BUK856-400
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
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BUK866-400IZ
300us)
D 400 F 6 F BIPOLAR TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
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BUK866-400
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kd smd transistor
Abstract: smd transistor wc LG Philips LM 300 W 01
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope
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BUK866-400
kd smd transistor
smd transistor wc
LG Philips LM 300 W 01
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60V uc3842
Abstract: No abstract text available
Text: \U \ INTEGRATED CIRCUITS UCC2305 UCC3305 UIMITRODE HID Lamp Controller FEATURES DESCRIPTION Regulates Lamp Power Compensates For Lamp Temperature Fixed Frequency Operation Current Mode Control Overcurrent Protected Overvoltage Shutdown Open and Short Protected
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UCC2305
UCC3305
UCC3305
60V uc3842
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CLC205
Abstract: No abstract text available
Text: SPT S P T2 0 S OVERDRIVE-PROTECTED WIDEBAND OP AMP SIGNAL PROCESSING TECHNOLOGIES General Description Features The SPT205 is a wideband overdrive-protected operational amplifier designed for applications needing both speed and low power operation. Utilizing a well-established current feedback
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170MHz
570mW
190mW
CLC205
SPT205
SPT205
CLC205
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope,
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BUK856-400
T0220AB
D 400 F 6 F BIPOLAR TRANSISTOR
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ULN3701Z
Abstract: uln 2008 uln3701 tda2002 N3701V TDA2002 power amplifier TDA2002 amplifier circuit TDA 2002 IC TDA 2002 tda2008
Text: ULN-3701Z/TDA2002 AUDIO POWER AMPLIFIER U LN -3701Z/TDA2002 5 TO 10-WATT AUDIO POWER AMPLIFIER FEATURES • • • • • • • • • Low External Parts Count Low Distortion Class B Operation Short-Circuit Protected Thermal Overload Protected Low Noise
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ULN-3701Z/TDA2002
-3701Z/TDA2002
10-WATT
T0-220
LM383
CA2002
-3701Z
TDA2002
ULN-3701Z
ULN3701Z
uln 2008
uln3701
N3701V
TDA2002 power amplifier
TDA2002 amplifier circuit
TDA 2002
IC TDA 2002
tda2008
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BUK856-450IX
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener
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BUK856-450IX
T0220AB
BUK856-450IX
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: BUK866
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for
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BUK866-400
SQT404
BUK866-4Q0
D 400 F 6 F BIPOLAR TRANSISTOR
BUK866
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