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    PRSS0004AE Search Results

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    H5N2501LD

    Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
    Text: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B


    Original     		PDF H5N2501LD, H5N2501LS, H5N2501LM REJ03G1250-0200 PRSS0004AE-A PRSS0004AE-B PRSS0004AE-C H5N2501LS H5N2501LD H5N2501LD H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-C Package Code 22

    H5N2001LD

    Abstract: H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C
    Text: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A Package name: LDPAK (L )


    Original     		PDF H5N2001LD, H5N2001LS, H5N2001LM REJ03G1339-0600 PRSS0004AE-A PRSS0004AE-B H5N2001LD H5N2001LS PRSS0004AE-C H5N2001LD H5N2001LM H5N2001LS H5N2001LSTL-E PRSS0004AE-A PRSS0004AE-C

    PRSS0004AE-A

    Abstract: PRSS0004AE-C RJK1525DPE RJK1525DPE-LE RJK1525DPF RJK1525DPJ Package Code 22
    Text: RJK1525DPJ, RJK1525DPE, RJK1525DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0623-0100 Rev.1.00 Apr.22,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0100 PRSS0004AE-A PRSS0004AE-B RJK1525DPE RJK1525DPJ PRSS0004AE-C PRSS0004AE-C RJK1525DPE RJK1525DPE-LE RJK1525DPF RJK1525DPJ Package Code 22

    H7N0405LD

    Abstract: H7N0405LD-E H7N0405LM H7N0405LS H7N0405LSTL-E PRSS0004AE-A PRSS0004AE-C
    Text: H7N0405LD, H7N0405LS, H7N0405LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1367-0100 Rev.1.00 Sep 25, 2006 Features • Low on-resistance RDS on = 4.0 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H7N0405LD, H7N0405LS, H7N0405LM REJ03G1367-0100 PRSS0004AE-A PRSS0004AE-B H7N0405LD H7N0405LS PRSS0004AE-C H7N0405LD H7N0405LD-E H7N0405LM H7N0405LS H7N0405LSTL-E PRSS0004AE-A PRSS0004AE-C

    RJK4013DPE

    Abstract: RJK4013DPE-00-J3
    Text: RJK4013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1513-0200 Rev.2.00 Jul 02, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		PDF RJK4013DPE REJ03G1513-0200 PRSS0004AE-B RJK4013DPE RJK4013DPE-00-J3

    Untitled

    Abstract: No abstract text available
    Text: H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0500 Previous: ADE-208-1416C Rev.5.00 Apr 07, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H5N2001LD, H5N2001LS, H5N2001LM REJ03G1339-0500 ADE-208-1416C) PRSS0004AE-A PRSS0004AE-B H5N2001LD H5N2001LS PRSS0004AE-C

    PM544

    Abstract: ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM
    Text: +2 -2 Packing form Non dry pack PRSS0004AC-A TO-220AB, TO-220ABV 50 PRSS0003AD-A TO-220FM, TO-220FMV 50 Non dry pack PRSS0003AE-A TO-220CFM, TO-220CFMV 50 Non dry pack PRSS0004AE-A LDPAK L , LDPAK(L)V 50 Non dry pack PRSS0004AE-B LDPAK(S)-(1), LDPAK(S)-(1)V


    Original     		PDF PRSS0004AC-A O-220FM, O-220FMV PRSS0003AE-A O-220CFM, O-220CFMV PRSS0004AE-A PRSS0004AE-B PRSS0004AE-C O-220AB, PM544 ldpak PRSS0003AD-A PRSS0003AE-A PRSS0004AC-A PRSS0004AE-A PRSS0004AE-C TO220FM TO220CFM

    RJK4513DPE

    Abstract: No abstract text available
    Text: RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1586-0100 Rev.1.00 Dec 08, 2009 Features • Low on-resistance RDS on = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJK4513DPE REJ03G1586-0100 PRSS0004AE-B RJK4513DPE

    Untitled

    Abstract: No abstract text available
    Text: RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1750-0100 Rev.1.00 Oct 26, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJL6012DPE REJ03G1750-0100 PRSS0004AE-B

    H7N0310LD

    Abstract: H7N0310LD-E H7N0310LM H7N0310LS PRSS0004AE-A PRSS0004AE-C
    Text: H7N0310LD, H7N0310LS, H7N0310LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1125-0500 Previous: ADE-208-1422C Rev.5.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H7N0310LD, H7N0310LS, H7N0310LM REJ03G1125-0500 ADE-208-1422C) PRSS0004AE-A PRSS0004AE-B H7N0310LD H7N0310LS PRSS0004AE-C H7N0310LD H7N0310LD-E H7N0310LM H7N0310LS PRSS0004AE-A PRSS0004AE-C

    2SK3211

    Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SK3211 REJ03G1091-0400 PRSS0004AE-A PRSS0004AE-B 2SK3211L-E 2SK3211STL-E PRSS0004AE-A

    2SJ479STL

    Abstract: 2SJ479 ldpak 2SJ479L-E PRSS0004AE-A
    Text: 2SJ479 L , 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SJ479 REJ03G0866-0300 PRSS0004AE-A PRSS0004AE-B 2SJ479STL ldpak 2SJ479L-E PRSS0004AE-A

    RJK6012DPE-00-J3

    Abstract: RJK6012DPE
    Text: RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1481-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		PDF RJK6012DPE REJ03G1481-0200 PRSS0004AE-B RJK6012DPE-00-J3 RJK6012DPE

    RJK1008DPE

    Abstract: RJK1008DPE-00-J3
    Text: RJK1008DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1629-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS on : 11 mΩ (Max) • ID : 80 A Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 2, 4 D 4 1 1. Gate


    Original     		PDF RJK1008DPE REJ03G1629-0100 PRSS0004AE-B RJK1008DPE RJK1008DPE-00-J3

    RJK6026DPE

    Abstract: RJK6026 RJK6026DPE-00-J3
    Text: RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1479-0100 Rev.1.00 Jul 02, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		PDF RJK6026DPE REJ03G1479-0100 PRSS0004AE-B RJK6026DPE RJK6026 RJK6026DPE-00-J3

    RJJ0601JPE-00-J3

    Abstract: RJJ0601JPE RJJ0601JPE-00-Q3
    Text: RJJ0601JPE Silicon P Channel MOS FET High Speed Power Switching REJ03G1603-0100 Rev.1.00 Nov 21, 2007 Features • Low on-resistance RDS on = 8.2 mΩ typ. • Capable of 4.5 V gate drive • High speed switching Outline RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJJ0601JPE REJ03G1603-0100 PRSS0004AE-B RJJ0601JPE-00-J3 RJJ0601JPE RJJ0601JPE-00-Q3

    RJL6013DPE

    Abstract: No abstract text available
    Text: RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1748-0100 Rev.1.00 Nov 07, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJL6013DPE REJ03G1748-0100 PRSS0004AE-B RJL6013DPE

    RJL5013DPE

    Abstract: No abstract text available
    Text: RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1755-0100 Rev.1.00 Nov 18, 2008 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJL5013DPE REJ03G1755-0100 PRSS0004AE-B RJL5013DPE

    GN4014ZB4LD

    Abstract: GN4014ZB4LS GN4014ZB4 GN4014ZB4LM PRSS0004AE-A igbt ignition
    Text: GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0200 Rev.2.00 Jul. 14, 2005 Features • Including Clamping Zener VCL = 400 V typ • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM REJ03G1249-0200 PRSS0004AE-A PRSS0004AE-B GN4014ZB4LD GN4014ZB4LS GN4014ZB4 GN4014ZB4LM PRSS0004AE-A igbt ignition

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR12CS-16B Thyristor R07DS0414EJ0100 Rev.1.00 May 18, 2011 Medium Power Use Features • IT AV : 12 A • VDRM : 800 V • IGT: 30 mA • Non-Insulated Type • Planar Type Outline RENESAS Package code : PRSS0004AE-B (Package name: LDPAK (S)-(1) )


    Original     		PDF CR12CS-16B R07DS0414EJ0100 PRSS0004AE-B PRSS0004AE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1525DPJ, RJK1525DPE, RJK1525DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0623-0200 Rev.2.00 Jun 30, 2010 Features • Low on-resistance  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B


    Original     		PDF RJK1525DPJ, RJK1525DPE, RJK1525DPF REJ03G0623-0200 PRSS0004AE-A PRSS0004AE-B PRSS0004AE-C RJK1525DPE RJK1525DPJ

    Untitled

    Abstract: No abstract text available
    Text: GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM Silicon IGBT Ignition Coil Driver REJ03G1249-0300 Rev.3.00 Jun 01, 2009 Features • Including Clamping Zener VCL = 400 V typ • Low saturation Voltage VCE(sat) = 1.4 V(typ) • SMD package LDPAK Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM REJ03G1249-0300 PRSS0004AE-A PRSS0004AE-B

    RJK4512DPE

    Abstract: RJK4512DPE-00-J3
    Text: RJK4512DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1540-0100 Rev.1.00 Apr 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B Package name: LDPAK(S -(1) ) D


    Original     		PDF RJK4512DPE REJ03G1540-0100 PRSS0004AE-B RJK4512DPE RJK4512DPE-00-J3

    Untitled

    Abstract: No abstract text available
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SK3461 REJ03G1102-0300 PRSS0004AE-A PRSS0004AE-B