PSMN008-75B Search Results
PSMN008-75B Price and Stock
Nexperia PSMN008-75B118Trans MOSFET N-CH 75V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN008-75B,118) |
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PSMN008-75B118 | Reel | 4,800 |
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PSMN008-75B118 | 13 Weeks | 4,800 |
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Nexperia PSMN008-75B,118MOSFETs PSMN008-75B/SOT404/D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN008-75B,118 |
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PSMN008-75B,118 | 100,000 | 2,000 |
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PSMN008-75B,118 | 19 | 3 |
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PSMN008-75B,118 | 1 |
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PSMN008-75B,118 | 54 Weeks | 4,800 |
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PSMN008-75B,118 | 54 Weeks | 800 |
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Philips Semiconductors PSMN008-75B |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN008-75B | 483 |
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PSMN008-75B | 386 |
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NXP Semiconductors PSMN008-75B,118 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN008-75B,118 | 15 |
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Philips Semiconductors PSMN00875BN-CHANNEL ENHANCEMENT MODE FIELD-EFFECT TRANSISTOR Power Field-Effect Transistor, 75A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PSMN00875B | 800 |
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PSMN008-75B Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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PSMN008-75B |
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PSMN008-75B - Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 8.5@10V mOhm; VDSmax: 75 V | Original | |||
PSMN008-75B |
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SMD, TrenchMOS Power Amp., 75V 75A 230W, MOS-FET N-Channel enhanced | Original | |||
PSMN008-75B |
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N-channel enhancement mode field-effect transistor | Original | |||
PSMN008-75B,118 |
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PSMN008-75 - TRANSISTOR 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | Original | |||
PSMN008-75B,118 |
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Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 8.5@10V mOhm; VDSmax: 75 V; Package: SOT404 (D2PAK); Container: Tape reel smd | Original | |||
PSMN008-75B/T3 |
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Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 8.5@10V mOhm; VDSmax: 75 V | Original |