transistor SMD wl3
Abstract: making code WL3 Micron 32MB NOR FLASH making WL3 PSRAM A191 A192 CY62147DV18 K6F1616R6C SRAM 4T cell
Text: TN-45-30: PSRAM 101 Introduction Technical Note PSRAM 101: An Introduction to Micron CellularRAM® and PSRAM Introduction The mobile phone market has become increasingly cost competitive, demanding interface innovations to support the low-cost requirements inherent in this market. Micron®
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TN-45-30:
09005aef82de6ec2
09005aef82de6e2a
tn4530
transistor SMD wl3
making code WL3
Micron 32MB NOR FLASH
making WL3
PSRAM
A191
A192
CY62147DV18
K6F1616R6C
SRAM 4T cell
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PF38F3040
Abstract: PF38F4050 PF38F4050L0 3144* intel l18scsp
Text: Intel StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option
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768-Mbit
256-Mbit
64-Mbit
11x13
PF38F3040
PF38F4050
PF38F4050L0
3144* intel
l18scsp
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Untitled
Abstract: No abstract text available
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and pSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) pSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
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PF38F4060
Abstract: PF38F4060M SCSP M18 PF38F4050 PF38F4060M0y 3076* intel 3098* intel tba 790
Text: Intel StrataFlash Cellular Memory M18 SCSP 2048-Mbit M18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 256, 512 Mbit, or 1 Gbit — PSRAM Die Density: 64 or 128 Mbit — x16 Non-Mux or AD-Mux I/O Interface
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2048-Mbit
11x13
307654-005US
PF38F4060
PF38F4060M
SCSP M18
PF38F4050
PF38F4060M0y
3076* intel
3098* intel
tba 790
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Spansion gl128
Abstract: sa5888 SPANSION gl512 27631 S29PL127J S75PL127J S75PL127JBD Spansion s29pl127j GL128 GL512
Text: S75PL127J MCPs Stacked Multi-Chip Product MCP CODE Flash, pSRAM and DATA Flash 128M (8M x 16-Bit CMOS 3.0 VoltOnly, Simultaneous Operation, Page Mode CODE Flash Memory, with 64M/32M (4M/2M x 16-Bit) pSRAM and 512M/256/128M (32M/16M/8M x 16Bit) Data Flash Memory
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S75PL127J
16-Bit
64M/32M
16-Bit)
512M/256/128M
32M/16M/8M
16Bit)
110ns
Spansion gl128
sa5888
SPANSION gl512
27631
S29PL127J
S75PL127JBD
Spansion s29pl127j
GL128
GL512
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3076* intel
Abstract: 3098* intel
Text: Intel StrataFlash Cellular Memory M18 2048-Mbit M18 Family with Synchronous PSRAM Product Features Datasheet Device Architecture Flash Performance — Flash Die Density: 256 or 512-Mbit — 96 ns Initial Read Access; 15 ns Asynchronous Page-Mode Read — PSRAM Die Density: 64 or 128-Mbit
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2048-Mbit
512-Mbit
128-Mbit
133MHz
3076* intel
3098* intel
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Numonyx admux
Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option
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128-Mbit
128-Mbit
32-Mbit
x32SH
x16SB
x16/x32
Numonyx admux
PF38F2030W0YTQE
numonyx 106 ball
PSRAM
TBA 931
PF38F2030
4400p0
x16C
NOR Flash AAD
die000000h
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transistor c124 esn
Abstract: transistor SA235 S71NS064NA0
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
transistor c124 esn
transistor SA235
S71NS064NA0
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numonyx 106 ball
Abstract: numonyx 107-ball Numonyx StrataFlash M18
Text: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option
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768-Mbit
256-Mbit
64-Mbit
11x13
numonyx 106 ball
numonyx 107-ball
Numonyx StrataFlash M18
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PF38F1030W0Y
Abstract: PF38F2030 PF38F 3117* intel
Text: Intel Wireless Flash Memory W18 128-Mbit W18 Family with Synchronous PSRAM Product Features Datasheet Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option — Bottom or Top Flash Parameter
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128-Mbit
32-Mbit
PF38F1030W0Y
PF38F2030
PF38F
3117* intel
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3525a
Abstract: MRC D17 AT52SQ1283J PA30 PA31
Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •
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128-Mbit
32-Mbit
88-ball
3525a
MRC D17
AT52SQ1283J
PA30
PA31
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MRC D17
Abstract: AT52SQ1283J PA31 la 78000 A7A1 SA135
Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •
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128-Mbit
32-Mbit
88-ball
3525B
MRC D17
AT52SQ1283J
PA31
la 78000
A7A1
SA135
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PF38F1010C0ZTL0
Abstract: PF38F1030 252636 PF38F
Text: Intel Advanced+ Boot Block Flash Memory C3 C3 SCSP Datasheet Product Features Device Architecture — Flash Density: 16-, 32-Mbit — Async PSRAM Density: 16-Mbit Device Voltage — Flash VCC = 3.3 V; Flash VCCQ = 3.3 V — PSRAM VCC = 3.0 V; Flash VCCQ = 3.0 V
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32-Mbit
16-Mbit
Lock08C3B70
RD28F3208C3T90
RD28F3208C3B90
RD28F3204C3T70
RD28F3204C3B70
RD38F1010C0ZTL0
RD38F1010C0ZBL0
PF38F1010C0ZTL0
PF38F1030
252636
PF38F
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INDEPENDENT INK 73X
Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
S71JLxxxH
S29JL064H
16-only
73-ball
88-ball
S71JLxxxHxx
INDEPENDENT INK 73X
FTA073
spansion pdip 32 marking format
3105P
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INDEPENDENT INK 73X
Abstract: CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
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S71JL128HC0/128HB0/064HB0/
064HA0/064H80
73-ball
88-ball
S71JLxxxH
S29JL064H
16-only
S71JLxxxHxx
INDEPENDENT INK 73X
CEF-A21
71jl128
bonus ball sheets
S71JL064HA0BAW01
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71WS512ND
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512N/256N
71WS512ND
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smartphone MOTHERBOARD CIRCUIT diagram
Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
Text: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code
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02-DT-0704-00
smartphone MOTHERBOARD CIRCUIT diagram
AP-DOC-070
Micron 512MB nand FLASH mcp
J9 G3
MARKING G3
MICRON mcp
QUALCOMM Reference manual
A0-A21
DM270
Flash MCp nand DRAM 107-ball
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DM270
Abstract: 2Gb NAND FLASH Toshiba QUALCOMM Reference manual Diskonchip toshiba 107ball marking G3 smartphone MOTHERBOARD CIRCUIT diagram Micron 512MB nand FLASH mcp M-Systems diskonchip mcp toshiba MLC nand flash
Text: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code
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02-DT-0704-00
DM270
2Gb NAND FLASH Toshiba
QUALCOMM Reference manual
Diskonchip
toshiba 107ball
marking G3
smartphone MOTHERBOARD CIRCUIT diagram
Micron 512MB nand FLASH mcp
M-Systems diskonchip mcp
toshiba MLC nand flash
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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S71WS512NE0BFWZZ
S71WS512
S29WS256N
54MHz
128Mb
96-ball
S71WS512NE0BFWZZ
S29WS256N
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k 1358
Abstract: 56FBGA
Text: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations
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SST34WA32A3
SST34WA32A4
SST34WA3283
SST34WA3284
SST34WA32x3
SST34WA32x4
MO-225,
56-fbga-MVN-6x8-1
56-Ball
S71358-01-000
k 1358
56FBGA
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N08C1630E3BM-7BI
Abstract: N08C1630E3BM-7TI
Text: N08C1630E3BM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information 32x08 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 8Mb (512Kbx16) PSRAM
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N08C1630E3BM
32x08
2Mbx16)
512Kbx16)
66-Ball
048Kb
32K-word
23200-C
N08C1630E3BM-7BI
N08C1630E3BM-7TI
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M69KB128AA
Abstract: BCR10
Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and
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M69KB128AA
104MHz
M69KB128AA
BCR10
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Untitled
Abstract: No abstract text available
Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and
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M69KB128AA
104MHz
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28F00AP30
Abstract: 28F00AP30TF IS61LVPS25636A XC6SL* MEMORY NUMONYX XILINX ipic axi DW10A emc core Spartan-6 FPGA
Text: LogiCORE IP AXI External Memory Controller v1.03a DS762 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The AXI External Memory Controller EMC IP core provides a control interface for external synchronous, asynchronous SRAM, Flash and PSRAM/Cellular RAM
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DS762
ZynqTM-7000
28F00AP30
28F00AP30TF
IS61LVPS25636A
XC6SL* MEMORY
NUMONYX
XILINX ipic axi
DW10A
emc core
Spartan-6 FPGA
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