Untitled
Abstract: No abstract text available
Text: 100/600 Series Incandescent Neon and LED Panel Mount Indicators Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, or T1 3/4 LEDs • Standard termination—2˝ stranded insulated leads or bi-pins other lead lengths available upon request
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MIL-E-5400
M52ear
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H524
Abstract: No abstract text available
Text: 100/600 Series Incandescent Neon and LED Panel Mount Indicators PICK UP NEGATIVE Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, or T1 3/4 LEDs • Standard termination—2˝ stranded insulated leads or bi-pins other lead lengths available upon request
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MIL-E-5400
H519ent
H524
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tinnerman
Abstract: c2a neon ac-dc bulb circuits led bulb H529 M522 M801
Text: 100/600 Series Incandescent Neon & LED Panel Mount Indicators - RoHS Compliant Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, or T1 3/4 LEDs • Standard termination—2˝ stranded insulated leads or bi-pins other lead lengths available upon request
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MIL-E-5400
tinnerman
c2a neon
ac-dc bulb circuits
led bulb
H529
M522
M801
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PAG.562.04C
Abstract: No abstract text available
Text: Accessories PAG-PLG Insulator for crimp contacts male / white marking Contact configuration M0.2 M0.4 M0.5 M0.6 M0.7 M0.8 PAG-PKG Crimp contacts, kit with the number of contacts in a tube female / red marking Insulator part number For male contact For female contact
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Untitled
Abstract: No abstract text available
Text: Accessories PAG-PLG Insulator for crimp contacts male / white marking Contact configuration M0.2 M0.4 M0.5 M0.6 M0.7 M0.8 PAG-PKG Crimp contacts, kit with the number of contacts in a tube female / red marking Insulator part number Male contact Female contact
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F050
Abstract: 161se
Text: PP 139-166 Pushbutton.qxd 5/8/02 9:41 AM Page 159 S E R I E S VM SWITCHES SNAP ACTION SWITCH SPECIFICATIONS Contact Rating: Gold .4VA max. @ 20 VDC or VAC Max. .1 Amps @ 48 VDC 3 Amps @ 125/250 VAC-UL, CUL, VDE 6 Amps @ 125/250 VAC-UL, CUL, VDE 10 Amps @ 125/250 VAC-UL, CUL, VDE
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Tem60
F050
161se
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Untitled
Abstract: No abstract text available
Text: SR020PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 - 60 Volts SR060PT CURRENT 1.0 Ampere FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low switching noise * Low forward voltage drop
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SR020PT
SR060PT
260oC/10
MIL-STD-750,
125oC
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Untitled
Abstract: No abstract text available
Text: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 662 I FSM = 10 500 V TO = 1.066 rT = 0.778 Low forward voltage drop Low recovery charge High operating temperature Low leakage current
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06D6000
1768/138a,
D/009/98b
Aug-11
Aug-11
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5sdd06d6000
Abstract: No abstract text available
Text: 5SDD 06D6000 5SDD 06D6000 Old part no. DV 817-630-60 High Voltage Diode Properties § Low forward voltage drop § Low recovery charge § High operating temperature § Low leakage current Key Parameters = 6 000 V RRM = 662 I FAVm = 10 500 I FSM = 1.066 V TO
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06D6000
06D6000
06D5800
1768/138a,
D/009/98a
Jul-10
Jul-10
5sdd06d6000
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662 marking
Abstract: 1N759A LDZ759A LDZ759AT
Text: PRODUCT DATA Micro International, Inc PART NUMBER LDZ759A and LDZ759AT Micro-LID Zener Diode Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Zener Diodes
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LDZ759A
LDZ759AT
LDZ759A
LDZ759AT
1N759A
662 marking
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2n918 transistor
Abstract: 662 marking 2n918 data sheet 2N918 DATASHEET Transistor 2N918 2N918 LDT918 LDT918T
Text: PRODUCT DATA Micro International, Inc PART NUMBER LDT918 and LDT918T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors
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LDT918
LDT918T
LDT918
LDT918T
2N918
2n918 transistor
662 marking
2n918 data sheet
2N918 DATASHEET
Transistor 2N918
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BFR91 transistor
Abstract: BFR91 LDTBFR91 LDTBFR91T
Text: PRODUCT DATA Micro International, Inc PART NUMBER LDTBFR91 and LDTBFR91T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors
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LDTBFR91
LDTBFR91T
LDTBFR91
LDTBFR91T
BFR91
BFR91 transistor
BFR91
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RO4003
Abstract: 293D105X0035B2T LL1005-FH2N2S LL1608-FH27NK LP3000SOT89 ca sma 2064-000-00
Text: EB3000SOT89AA LP3000SOT89 1.85 GHZ POWER EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 30 dBm Output Power 10 dB Associated Gain 1.8 dB Noise Figure SOT89 Surface Mount Package EB3000SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has a representative output power of
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EB3000SOT89AA
LP3000SOT89
EB3000SOT89AA
LP3000SOT89;
RO4003
DOC-009
DSS-046A
293D105X0035B2T
LL1005-FH2N2S
LL1608-FH27NK
ca sma
2064-000-00
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2n3904 transistor
Abstract: 2N3904, transistor 2N3904 die 662 marking 2N3904 transistor data sheet free download 2N3904 LDT3904 LDT3904T
Text: PRODUCT DATA Micro International, Inc PART NUMBER LDT3904 and LDT3904T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors
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LDT3904
LDT3904T
LDT3904
LDT3904T
2N3904
2n3904 transistor
2N3904, transistor
2N3904 die
662 marking
2N3904 transistor data sheet free download
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Untitled
Abstract: No abstract text available
Text: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 CHICAGO MINIATURE LAMP, INC. WHERE INNOVATION COMES TO LIGHT 4305H Solid State LED Lamps-Ultra Brite 120 mcd T-1 3/4 5mm D E S C R I PT I O N A N D F E AT U R E S .217±.012
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4305H
4305H1
4305H5
4305H7
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2n3996 equivalent transistor
Abstract: transistor sd 965
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SWITCHING SILICON TRANSISTOR
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MIL-PRF-19500/374
2N3996
2N3997
2N3998
2N3999
2N3998
T4-LDS-0165
2n3996 equivalent transistor
transistor sd 965
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rqva 041
Abstract: 004-AB QMAT503 rqma100 005AF
Text: Catalogue RK 84-10 E ASEA Edition 1 June 1975, File R, Part 1 Temperature monitoring system type RANVA M easures the tem perature at up to 30 d ifferent points. The m onitoring range is steplessly ad justable on each m onitor Indicates exceeded tem perature on a
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620-F
14-1E.
RQMA100
rqva 041
004-AB
QMAT503
005AF
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tinnerman
Abstract: IFFM 18 M-801
Text: 100/600 Seríes Incandescent Neon and LED Panel Mount Indicators Special Features • Built-in T1 3/4 incandescent, T2 neon bulbs, orT1 3/4 LEDs / • Standard termination— 2" stranded insulated leads or bi-pins other lead lengths available upon request
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MIL-E-5400
tinnerman
IFFM 18
M-801
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TO220H
Abstract: 414x
Text: ADVANCED POUER TECHNOLOGY 06E D | Ü2S71D1 OOOQatO 3 | T -3 1 -IS - APT4007FN 400V 60A 0.07 Q APT3507FN 350V 60A 0.07 Q P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter VDSS All Ratings: Tc = 25°C unless otherwise specified.
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2S71D1
APT4007FN
APT3507FN
250uA)
151ln.
TO220H
414x
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108j capacitor
Abstract: No abstract text available
Text: PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 0.5W TO 50 W ATT_ 100 SERIES • ■ ■ ■ ■ Low cost delivery from stock see p. 4 W idest selection in the industry! Wide resistance range: 0.0050 to 1MegO, tolerances to ±0.01% Available on exclusive ‘SW IFT ’ program
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6000ppm
MIL-R-39007
-\05Q
108j capacitor
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TPM1919-40
Abstract: SO47 TPM1919-40-311
Text: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point
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TPM1919-40-311
11-OA
TPM1919-40-
TPM1919-40
SO47
TPM1919-40-311
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Untitled
Abstract: No abstract text available
Text: FLC311MG-4 FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC311MG-4 is a power GaAs FET that is designed for
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FLC311MG-4
FLC311MG-4
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Untitled
Abstract: No abstract text available
Text: DRAWING MADE IN KOREAN PROJECTION DIMENSIONS IN USStíS . MM CUSTOMER DRAWING — E7- - TYP i r- pT TYP / RO. s-7 -— 7— - ^ 0 . 3 <ALL ARDUND —3 A TO BE MEASURED WITHIN 2nm FORM EIE 2. THE MATING PLUG HOUSING PART NUMBER' 174044 3. APPLICABLE CONTACT PART NUMBER.1 173682
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ECNCRD97-141)
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PDF
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Untitled
Abstract: No abstract text available
Text: WWW STEWART CONNECTOR RD. S, BOX SOSO GLEN ROCK PENNSYLVANIA 173S7 PART NO. S S - 6 4 8 B S - A - N F EIGHT CONTACT, EIGHT POSTION, SHIELDED JACK "-N F ” NON-FLANGE - .850 [21.59] M A X- - 1 X c s \ s P-T o> ro o lO in / □ □ .040 [1.02]—
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SS-648BS-A-NF
CT640092B3
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