transformer 220V 12V 100A
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UC3873 Preliminary LINEAR INTEGRATED CIRCUIT LOW COST POWER-SAV I N G M ODE PWM CON T ROLLER FOR FLY BACK CON V ERT ERS 5 4 6 DESCRI PT I ON 2 3 The UC3873 is a high performance current mode PWM 1 controller ideally suited for low standby power. Low V DD startup
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UC3873
UC3873
OT-26
QW-R103-068.
transformer 220V 12V 100A
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s4 marking code siemens
Abstract: Tele Quarz Group Crystal Oscillator 8 bit 92112 eaw t200 PSB 2186N SDS S4 24V smd marking mxc gruner 275 c 17 PTR 70 Schott Receiver VOGT WD
Text: ICs for Communications ISDN Subscriber Access Controller for Terminals ISAC -S TE PSB 2186 User’s Manual 10.94 PEB 2186 Revision History: 10.94 Previous Releases: 11.88; 3.89; 12.89; 02.95 Page Subjects changes since last revision The present documentation is an editorial update of the
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OB830,
D-74924
D-81667
D-94128
F-91940
s4 marking code siemens
Tele Quarz Group Crystal Oscillator
8 bit 92112
eaw t200
PSB 2186N
SDS S4 24V
smd marking mxc
gruner 275 c 17
PTR 70 Schott Receiver
VOGT WD
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sg8002LB
Abstract: No abstract text available
Text: Crystal oscillator PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR SG - 8002CE series Product number please contact us Q3321CEx1xxxx00 •Frequency range •Operating voltage •Function •Thickness •Lead(Pb)-free : : : : : 1 MHz to 125 MHz 3.3 V or 5.0 V
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8002CE
Q3321CEx1xxxx00
SG-8002LA
SG-8002LB
sg8002LB
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directional coupler chip 8 GHz
Abstract: UPG503P diode 517 BF08 UPG503B
Text: NEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER FEATURES UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS Ta- 25°q SYM BO LS • WIDE OPERATING FR EQ U EN C Y RANGE: fiN = 3.5 to 9.0 GHz V dd • LOW POW ER DISSIPATION VSS2 P in • DIVISION RATIO O F 4 Pt • GUARANTEED OPERATING TEM PERATURE RANGE:
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UPG503B
UPG503P
UPG503B/P
PG503B/P
UPG503B,
directional coupler chip 8 GHz
UPG503P
diode 517
BF08
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2N2109
Abstract: 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119
Text: 8365700 SOLI» SOLID POWER POWER C O R P 95C CORP 00122 —Ol D » e | fl3bS?DD ODGDlSa fi § ~ POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ Ic 25°C BV cbo BV ceo BVebo A V V V Watts hFE MIN MAX <kD Ic VcE V A Test Sat Voltages Conditions V ce V be
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0DD0152
O-114
2N2109
2N2110
2N2111
2N2112
2N2113
2N2114
2N2116
2N2117
2N2118
2N2119
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2sc3181
Abstract: o72b 2SA1264 Toshiba 2sa1264
Text: Dd J TOSHIBA {DISCRETE/OPTO! 9 0 9 7 2 SO T O SH IBA t OTTESD 0DD7EÖ7 1 | D ISC R ET E /O PT O S IL IC O N PNP T R IP L E D IF F U SE D TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES: . Complementary to 2SC3181 . Recommend for 55W High Fidelity Audio Frequency
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0DD72Ã
2SC3181
8-16B1A
-CL03
2sc3181
o72b
2SA1264
Toshiba 2sa1264
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A109
Abstract: No abstract text available
Text: r 6 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. RELEASED FOR P U B L I C A T IO N 19 BY AMP INCORPORATED. 4 5 2 3 , 19 D I ST LOC ALL RIGHTS RESERVED. REVI SI ONS BD DWN DE SC RI PT IO N R REV THERMOPLAST I C , STEEL 15FEB00 DD REV PER EC 0G40-0285-99
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0G40-0285-99
0U1D-0113-00
5FEB00
31AUG01
Q0-B-750.
MID-G-45204,
CQ-N-290â
MI0-T-10727.
23-DEC-Ã
03-JAN-99
A109
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143431
Abstract: No abstract text available
Text: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. 19 RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. , 6 4 5 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 00 GP DE SC RI PT IO N J ACK5CREW 4-40 REL -1 THRU -1 1 T5 l 2 JULOl DD P 2 OVERMOLD COLOR : GRAY
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JUN97
143431
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SC236
Abstract: 2SC2367 2SC2369 2SC2377
Text: 103 * * m DD ins it 1 - a • 2 SC 2 3 5 2 0 g :TV VHF 5 4 - tM f S Ä : ¡ S S » 'J i# o 6 3 Ä O - f^ o £ *§ is •¡Eikit a a Vceo (V 20 Vebo (V) 4 f T(MHz) Ic(mA) 30 Cre(pF) Pt (mW) 250 CG(dB) T j (°C) 125 NF (dB) tlFE « S 'h 40.00 100.00 850.00
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200MHz,
35MHz
200MHz
201MH
2SC2377
100MHz
SC236
2SC2367
2SC2369
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A109
Abstract: MIL-C-50
Text: 6 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. BY AMP INCORPORATED. 2 3 , 19 RELEASED FOR P U B L I C A T IO N 19 4 5 D I ST LOC ALL RIGHTS RESERVED. REVI SI ONS BD DE SC RI PT IO N V REV W REV PER 15FEB00 DD 3 1 AUG01 OR EC 0 G 4 0 - 0 2 8 5 - 9 9 PER
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MIL-C-50.
23-DEC-Ã
03-JAN-99
M055ER
11JUN97
25-FEB-00
aoip36051
/home/amp36051/edmmod
A109
MIL-C-50
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Untitled
Abstract: No abstract text available
Text: £ lásfl NEC LOW C U R R E N T 2-8 GHz W ID E-B A N D A M P LIF IER UPG110B-L UPG110P-L FEATURES PRELIM IN A R Y A BSO LU TE M A X IM U M RiATINGS Ta = 25°C • LOW CU R R E N T : 60 m A TYP SYM BO LS P A R A M ET ER S UNITS RATINGS V dd V in P in Pt Tc
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UPG110B-L
UPG110P-L
34-6393/FAX
NOTICE-2276
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SG-636
Abstract: SG-8002JC SG8002JC 970513 EPSON 2ph
Text: EPSON New Products Programmable Clock Oscillator SG - 8002JC series • Using PLL technology and One time PROM programmability for quick-turn custom version. • Reflowable and high density mounting type SMD package compatible with SG-636. • Operable 3.3V or 5.0V and Out put frequencies from 1.0 MHz to 125 MHz at 5.0V up to 90MHz at 3.3V .
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8002JC
SG-636.
90MHz
-16mA
SG-8002JC
97-T12
SG-636
SG8002JC
970513
EPSON 2ph
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siemens cp 528
Abstract: sbc siemens
Text: Electrical Characteristics 5 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Voltage on any pin with respect to ground Vs —0.4 to V dd + 0.4 V Ambient temperature under bias TA Oto 70 °C Storage temperature T stg - 6 5 to 125
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W91445A
Abstract: 2N901 W91446A W91444A W91445B W91447A W91447B W91448A 2N9014
Text: W91440 A/B SERIES IVinbond GENERAL DESCRIPTION The W91440A/B series are monolithic integrated circuit. It contains 12 number memories which can perform Tone/Pulse switchable dialing functions. It is fabricated in CM O S technology thus has good performance in low voltage, low power
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W91440
10-MEMORY
W91440A/B
16-digits
32-digits
1N4148
33Ki2
TNR680K
220Kfl
W91445A
2N901
W91446A
W91444A
W91445B
W91447A
W91447B
W91448A
2N9014
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE T C58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 1.8-V read-only electrically erasable and programm able
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C58FYT160/B160FT-12
16-MBIT
TC58FYT160/B160
48-pin
TC58FYT160/B
160FT-12
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Untitled
Abstract: No abstract text available
Text: NCR92C120 ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUMS Symbol ta Ts Vdd V in VoUT tl Parameter Am bient Tem perature Storage Tem perature Supply Voltage Input Voltage O utput Voltage Lead Tem perature Soldering 10 seconds maximum Minimum Maximum 70 125 7.0
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NCR92C120
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Untitled
Abstract: No abstract text available
Text: TS951 TS952 _TS954 INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS • RAIL TO RAIL INPUT COMMON-MODE VOLTAGE RANGE ■ RAIL TO RAIL OUTPUT VOLTAGE SWING ■ OPERATING FROM 2.7V to 12V ■ HIGH SPEED 3MHz, 1V/|os
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TS951
TS952
TS954
OT23-5
TS951ILT
TS95x
TS951
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Untitled
Abstract: No abstract text available
Text: UNITED MI CRO EL ECT RO NI CS 9325812 U N IT E D 12 ]> i| L E S A I S 000D571 S |~ M IC R O E L E C T R O N IC S UMC U M 338X Seríes Simple Melody Generator m m Features • 1 .3 5 V —5 V operating voltage Low stand-by current ■ 64-note memory B uilt-in oscillator and pre-amplifier circuit
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000D571
64-note
UM3381
UM3381â
UM3382
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58FVT800/B800F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FVT800/B800F/FT-85
TC58FVT800/B800
44-pme-out
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A18T
Abstract: No abstract text available
Text: TC58FVT800/B800F/FT-85,-10,-12 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH M EM O RY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FVT800/B800F/FT-85
TC58FVT800/B800
44-pin
A18T
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58FVT800/B800F/FT-85,-10,-12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8-MBIT 1M X 8 BITS / 512K X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT800/B800 is a 8,388,608 - bit, 3.0-V read-only ele ctrically erasable and program m able
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TC58FVT800/B800F/FT-85
TC58FVT800/B800
44-pin
TC58FVT800/B800F/FT-85f
48--P
C58FVT800/B800F/FT-85
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58FVT016/B016FT-85,-10,-12 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 16-M BIT 2M X 8 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT016/B016 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FVT016/B016FT-85
TC58FVT016/B016
40-pin
100/iS
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a19t
Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able
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TC58FVT160/B160FT-85
16-MBIT
TC58FVT
160/B
TC58FVT160/B160
48-pin
a19t
TC58FVB160FT
1X16
D8000H-DFFFFH
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C5804
Abstract: No abstract text available
Text: ±Aoj REV. MOLD TO POSITION; ±;g[g [;£?] ONE PLACE DECIMALS: ± .1 [2 .5 ] TWO PLACE DECIMALS: ±.01 [.2 5 ] ► SEE SHEET TWO FOR - B E TOP VIEW (CUT TO POSITION: ±.005 [.127]- SEE NOTE 6) — | (NO. OF POS X .100 [2.54]) -(.100 [2.54-] J— I I i i
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TP-03
TP-24
TP-03
C5804
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