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    2SC3357-T1

    Abstract: 2SC3357 transistor 2SC3357
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC3357-T1-A

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz


    Original     		PDF NE85634 2SC3357 NE85634-A PU10211EJ01V0DS 2SC3357-T1-A

    nec 2501

    Abstract: 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz


    Original     		PDF 2SC3357 2SC3357-T1 nec 2501 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1