LF5661-1
Abstract: power thyristor Thyratron Ignitron thyristor firing circuits ACR300 DYNEX PT40 thyristor firing METHODS Thyristor pulse transformer
Text: Pulsed Power www.dynexsemi.com 1 Pulsed Power Pulsed Power Pulsed Power can be defined as electrical energy that is delivered as single or repeated pulses of relatively short duration such that the peak power delivered is high but the average power is low.
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500us
600A/us
LF5661-1.
LF5431-1.
LF5661-1
power thyristor
Thyratron
Ignitron
thyristor firing circuits
ACR300
DYNEX
PT40
thyristor firing METHODS
Thyristor pulse transformer
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LF5661-1
Abstract: power thyristor 40kv transformer ACR300 crowbar Thyristor pulse transformer PT40 water cooled thyristor assembly Dynex DYNEX Thyristor
Text: Pulsed Power www.dynexsemi.com 1 Pulsed Power Pulsed Power can be defined as electrical energy that is delivered as single or repeated pulses of relatively short duration, such that the peak power delivered is high but the average power is low. A characteristic of narrow
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LF5661-1.
LF5431-1.
LF5661-1
power thyristor
40kv transformer
ACR300
crowbar
Thyristor pulse transformer
PT40
water cooled thyristor assembly
Dynex
DYNEX Thyristor
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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clothes iron
Abstract: L6720 LLD1005E01
Text: INFRARED PULSED LASER DIODE L6720 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) RELATIVE RADIANT POWER (%) 100 2.5 ep (Ｗ) 3.0 PULSED RADIANT POWER L6720 Figure 3: Typical Emission Spectrum 2.0
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L6720
clothes iron
L6720
LLD1005E01
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cermolox
Abstract: TP105 burle "Power Tube"
Text: 4665 Power Tube UHF Pulsed Power Amplifier Tube - Cermolox - Forced-Air-Cooled - Coaxial Terminals - Full Input to 1215 MHz - 65kW Peak Pulsed Power Output - Controlled Interelectrode Capacity The BURLE 4665 is designed for use as a reliable UHF pulsed
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L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor
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HVV1214-075
HVV1214-075MHz,
HVV1214-075
429-HVVi
EG-01-PO08X4
L-Band 1200-1400 MHz
diode gp 429
Radar
x band radar
HV400
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laser diode mosfet triggering circuit
Abstract: PULSED LASER DIODE DRIVER spl pl90 0 ll90_3 SPL LL90 SPL PL90_3 2 Wavelength Laser Diode mosfet triggering circuit adaptive cruise control laser diode lifetime
Text: Opto Semiconductors Overview: OSRAM Opto Semiconductors Pulsed Laser Diodes 1. Applications of high power pulsed laser diodes OSRAM Opto Semiconductors pulsed laser diodes provide high power tens of watts short (several nanoseconds) optical pulses in the near infra-red regime.
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dr25 diode specifications
Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Text: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)
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L6690
dr25 diode specifications
DR25 Diode
OP 741
L6690
free download led wiring guide
LLD1002E01
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28F0181-1SR-10
Abstract: CAPACITOR 150 RED
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280W
RF3928
RF3928
DS120508
28F0181-1SR-10
CAPACITOR 150 RED
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Radar
Abstract: diode gp 429 HV400 hvvi transistor 1150
Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,
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HVV1012-050
HVV1012-050
HVV1012-050MHz,
Pulsed10
HVV1012-060
1025-1150MHz,
10sPACKAGE
Radar
diode gp 429
HV400
hvvi
transistor 1150
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120928
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NI-400
Abstract: diode gp 429 HV400
Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,
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HVV1012-050
HVV1012-050
HVV1012-050MHz,
Pulsed10
HVV1012-060
1025-1150MHz,
10sPACKAGE
NI-400
diode gp 429
HV400
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Untitled
Abstract: No abstract text available
Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928
RF3928280W
DS120508
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
RFHA1025
96GHz
215GHz
DS120613
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3640p
Abstract: No abstract text available
Text: PULSED POWER CAPACITORS NOVACAP offers a line of MLC pulsed power chip capacitors, sizes 1825, 3530, 3640, 7565, which provide exceptional discharge energy at elevated voltages. These devices are manufactured using a unique dielectric formulation which has a
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desi80%
3640p
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RF3928B
Abstract: power transistor gan s-band RF392
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS111208
power transistor gan s-band
RF392
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atc100a150
Abstract: power transistor gan s-band
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
atc100a150
power transistor gan s-band
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Untitled
Abstract: No abstract text available
Text: RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium
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RFHA1027
RFHA1027
DS140204
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
DS120503
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PDF
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Untitled
Abstract: No abstract text available
Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928B
RF3928B
DS120503
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GaN hemt
Abstract: power transistor gan s-band air surveillance system diagram using radar
Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RF3928280
RF3928
RF3928
DS110720
GaN hemt
power transistor gan s-band
air surveillance system diagram using radar
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Untitled
Abstract: No abstract text available
Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology
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RFHA1025
96GHz
215GHz
DS120613
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FP18
Abstract: CD 910 radar range finder L7695-04 laser diode symbols
Text: Pulsed Laser Diode L7695-04 HAM AM ATSU preliminary data •Applications Laser Radar Range Finder Excitation Light Source ■ABSOLUTE MAXIMUM RATINGS Tc=25°C Characteristics Pulsed Forward Current Reverse Voltaqe Pulsed Radiant Output Power Pulse Duration
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L7695-04
FP18
CD 910
radar range finder
L7695-04
laser diode symbols
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laser diod
Abstract: for LASER RANGE FINDER L7690-02 LD chip radar range finder
Text: 860nm Pulsed Laser Diode L7690-02 HAM AMATSU prelim inary data •Applications Laser Radar Range Finder Excitation Light Source ■ABSOLUTE MAXIMUM RATINGS Tc=25°C Characteristics Pulsed Forward Current Reverse Voltage Pulsed Radiant Output Power Pulse Duration
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OCR Scan
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860nm
L7690-02
L7690-02
laser diod
for LASER RANGE FINDER
LD chip
radar range finder
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