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    PUSH PULL MOSFET DRIVER WATTS Search Results

    PUSH PULL MOSFET DRIVER WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    PUSH PULL MOSFET DRIVER WATTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DRF1300

    Abstract: P6139A P5100 Chokes* COMMON MODE SUPPRESSION 250V high power pulse generator with mosfet pulse DRF1300
    Text: DRF13XX Evaluation Board Figure 1 shows a simplified circuit diagram for the DRF13XX series of devices. The Hybrid consists of two MOSFET Drivers and two Power MOSFETs in a Push-Pull configuration. For U1, the control signal is applied to internal driver through pin 4 IN


    Original     		PDF DRF13XX DRF13XX DRF1300 010in DRF13xx. P6139A P5100 Chokes* COMMON MODE SUPPRESSION 250V high power pulse generator with mosfet pulse DRF1300

    ECN3053

    Abstract: ECN3053F high voltage 3-phase motor driver ic application for high gain cmos opamp
    Text: HIGH VOLTAGE MONOLITHIC IC ECN3053F 3-Phase Motor Bridge Driver IC The ECN3053F drives a 3-Phase Motor Bridge with 3 TOP and 3 BOTTOM Arms, Push-Pull Output Drivers controlled by 6 CMOS inputs. Built in a High Voltage Dielectric Isolation Process, this Latch-Up Free IC can directly drive 6 IGBT or MOSFET gates in


    Original     		PDF ECN3053F ECN3053F 620VDC 620VDC 20VDC 49VDC, 10VDC, 49VDC 13MAX ECN3053 high voltage 3-phase motor driver ic application for high gain cmos opamp

    j945

    Abstract: nippon ferrite MRF177 motorola ups schematic rf push pull mosfet power amplifier 1N5347B ALC 665 MOS FIELD EFFECT TRANSISTOR
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 j945 nippon ferrite MRF177 motorola ups schematic rf push pull mosfet power amplifier 1N5347B ALC 665 MOS FIELD EFFECT TRANSISTOR

    KA5L0565R

    Abstract: FSD210 dip-8 KA7632 KA3525A lm7905 D-pak SMPS KA3525A KA5M0380R application note ka3842a application note functions light sensor in lm324 and lm339 spice model l272
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, KA5L0565R FSD210 dip-8 KA7632 KA3525A lm7905 D-pak SMPS KA3525A KA5M0380R application note ka3842a application note functions light sensor in lm324 and lm339 spice model l272

    functions light sensor in lm324 and lm339

    Abstract: light sensor lm324 and lm339 in circuit LM7905 TO-92 KA3525A KA3842A equivalent ka3842a application note KA5M0365R application note LM7805 D2 PACK FSD210 dip-8 SMPS KA3525A
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, functions light sensor in lm324 and lm339 light sensor lm324 and lm339 in circuit LM7905 TO-92 KA3525A KA3842A equivalent ka3842a application note KA5M0365R application note LM7805 D2 PACK FSD210 dip-8 SMPS KA3525A

    IN5343

    Abstract: Diode IN5343 TRANSISTOR Z4 305 Power Mosfet MOTOROLA zener diode z10 zener motorola MRF166 MRF166W IDG 600 mrf166w application note
    Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics


    Original     		PDF MRF166W/D MRF166W MRF166W/D* IN5343 Diode IN5343 TRANSISTOR Z4 305 Power Mosfet MOTOROLA zener diode z10 zener motorola MRF166 MRF166W IDG 600 mrf166w application note

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation


    Original     		PDF MRF177 MRF177

    schematic diagram of energy saving lamps 25 watts

    Abstract: Motorola, AN1049 ELECTRONIC BALLAST 150 W HID DIAGRAM Motorola Bipolar Power Transistor Data schematic diagram Electronic Ballast HID Motorola, eb407 Basic Halogen Converter EB407 Basic Halogen Converter FT1603A transistor bc557 eb407
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


    Original     		PDF AN1543/D AN1543 AN1543/D* schematic diagram of energy saving lamps 25 watts Motorola, AN1049 ELECTRONIC BALLAST 150 W HID DIAGRAM Motorola Bipolar Power Transistor Data schematic diagram Electronic Ballast HID Motorola, eb407 Basic Halogen Converter EB407 Basic Halogen Converter FT1603A transistor bc557 eb407

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE ABSTRACT With a continuous growth rate of 20% per year, electronic lamp ballasts are widely spread over the world. Even though the light out of a fluorescent tube has a discontinuous


    Original     		PDF AN1543/D transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


    Original     		PDF AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.


    Original     		PDF AN1543/D r14525 transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast

    J945

    Abstract: 1N5347B MRF177
    Text: Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 J945 1N5347B MRF177

    SPICE model for UC3844

    Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
    Text: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF BR1522/D Aug-2000 r14525 BR1522/D SPICE model for UC3844 UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler

    MRF177

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz


    Original     		PDF MRF177/D MRF177 MRF177/D

    MRF177

    Abstract: 1N5347B transistor RF S-parameters
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 MRF177 1N5347B transistor RF S-parameters

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    MPLC0525L

    Abstract: LTC36 500K AUDIO DUAL POT 3600 watts power amplifier circuit diagram LT3080 6600k LTC3603
    Text: LTC3600 15V, 1.5A Synchronous Rail-to-Rail Single Resistor Step-Down Regulator Features Description Single Resistor Programmable VOUT ±1% ISET Accuracy Tight VOUT Regulation Independent of VOUT Voltage Easy to Parallel for Higher Current and Heat Spreading


    Original     		PDF LTC3600 200kHz 12-Pin QFN-28 TSSOP-28E QFN-24 MSOP-16E QFN-16 MPLC0525L LTC36 500K AUDIO DUAL POT 3600 watts power amplifier circuit diagram LT3080 6600k LTC3603

    lt3600

    Abstract: 3600 watts power amplifier circuit diagram LTC3603
    Text: LTC3600 15V, 1.5A Synchronous Rail-to-Rail Single Resistor Step-Down Regulator FEATURES DESCRIPTION n The LTC3600 is a high efficiency, monolithic synchronous buck regulator whose output is programmed with just one external resistor. The accurate internally generated 50 A


    Original     		PDF LTC3600 QFN-28 TSSOP-28E QFN-24 MSOP-16E QFN-16 300mV 40VRMS lt3600 3600 watts power amplifier circuit diagram LTC3603

    lt3600

    Abstract: ltc3600 MPLC0525L LTC3600EMSE 3600 watts power amplifier circuit diagram
    Text: LTC3600 15V, 1.5A Synchronous Rail-to-Rail Single Resistor Step-Down Regulator FEATURES DESCRIPTION n The LTC3600 is a high efficiency, monolithic synchronous buck regulator whose output is programmed with just one external resistor. The accurate internally generated 50 A


    Original     		PDF LTC3600 LTC3600 QFN-16 MSOP-16E LT3080 300mV 40VRMS LT3083 310mV 40VRMS lt3600 MPLC0525L LTC3600EMSE 3600 watts power amplifier circuit diagram

    LTC3603

    Abstract: No abstract text available
    Text: LTC3600 15V, 1.5A Synchronous Rail-to-Rail Single Resistor Step-Down Regulator FEATURES n n n n n n n n n n n n DESCRIPTION Single Resistor Programmable VOUT ±1% ISET Accuracy Tight VOUT Regulation Independent of VOUT Voltage Easy to Parallel for Higher Current and Heat Spreading


    Original     		PDF LTC3600 200kHz 12-Pin LTC3600 QFN-16 MSOP-16E LT3080 300mV LT3083 310mV LTC3603

    4039T

    Abstract: LTC3603
    Text: LTC3600 15V, 1.5A Synchronous Rail-to-Rail Single Resistor Step-Down Regulator FEATURES DESCRIPTION n The LTC3600 is a high efficiency, monolithic synchronous buck regulator whose output is programmed with just one external resistor. The accurate internally generated 50 A


    Original     		PDF LTC3600 QFN-28 TSSOP-28E QFN-24 MSOP-16E QFN-16 300mV 40VRMS 4039T LTC3603

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics


    Original     		PDF MRF166W

    IN5343

    Abstract: TRANSISTOR Z10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • Push-Pull Configuration Reduces Even Numbered Harmonics


    OCR Scan     		PDF MRF166W IN5343 TRANSISTOR Z10

    irf740 switching 3 phase motor driver

    Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
    Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can


    OCR Scan     		PDF