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    DIODE i2t

    Abstract: MG15Q6ES42
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG15Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)


    Original     		MG15Q6ES42 PW03770796 DIODE i2t MG15Q6ES42 PDF