PZT2222
Abstract: PZT2222A PZT2907 PZT2907A
Text: PZT2222 / PZT2222A PZT2222 / PZT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 6.5 3 Power dissipation Verlustleistung ±0.2 1.65 ±0.1 Plastic case Kunststoffgehäuse
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PZT2222
PZT2222A
OT-223
UL94V-0
PZT2222
PZT2907,
PZT2907A
PZT2222A
PZT2907
PZT2907A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet Supersedes data of 1997 Jun 02 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A PINNING FEATURES • High current max. 600 mA
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M3D087
PZT2222A
OT223
PZT2907A.
MAM287
OT223)
115002/00/03/pp7
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PN2222A
Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223
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PN2222A
MMBT2222A
PZT2222A
500mA.
MMBT2222A
PN2222A
OT-23
OT-223
fairchild 1P
PZT2222A
PN2222
pn222
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Untitled
Abstract: No abstract text available
Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifierand switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223
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PN2222A
MMBT2222A
PZT2222A
500mA.
MMBT2222A
PN2222A
OT-23
OT-223
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Untitled
Abstract: No abstract text available
Text: PZT2222A, SPZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
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PZT2222A,
SPZT2222A
PZT2907AT1
PZT2222AT1/D
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number
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PZT2222A
OT-223
500mA.
PZT2222AG-AA3-R
PZT2222AL-AA3-R
OT-223
QW-R207-001
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SPZT2222AT1G
Abstract: No abstract text available
Text: PZT2222A, SPZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
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PZT2222A,
SPZT2222A
OT-223
PZT2907AT1
AEC-Q101
PZT2222AT1/D
SPZT2222AT1G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number
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PZT2222A
OT-223
500mA.
PZT2222AG-AA3-R
PZT2222AL-AA3-R
OT-223
PZT2222AL-AA3-R
QW-R207-001
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pzt2222a
Abstract: QW-R207-001
Text: UTC PZT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 1 2 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE
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PZT2222A
500mA.
OT-223
QW-R207-001
pzt2222a
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Untitled
Abstract: No abstract text available
Text: UTC PZT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE
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PZT2222A
500mA.
OT-223
QW-R207-001
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Untitled
Abstract: No abstract text available
Text: PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC)
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PZT2222A
OT-223
PZT2222A
GT2222A
OT-223
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em 223
Abstract: tic 223 GT2222A PZT2222A
Text: PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC)
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PZT2222A
OT-223
PZT2222A
GT2222A
OT-223
em 223
tic 223
GT2222A
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MMBT2222A
Abstract: PN2222A PZT2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol
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MMBT2222A
PZT2222A
OT-23
OT-223
MMBT2222A
PN2222A
PZT2222A
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Untitled
Abstract: No abstract text available
Text: PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 * “G” Lead Pb -Free SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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PZT2222A
OT-223
PZT2222A
GT2222A
OT-223
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PZT2222A
Abstract: No abstract text available
Text: PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES Power dissipation P CM : 1 W˄Tamb=25ć˅ B BASE 2. COLLECTOR 3. E 0D[ EMITTER C fe e fe e fe e ELECTRICAL CHARACTERISTICS˄Tamb=25ć
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PZT2222A
OT-223
01-Jun-2002
PZT2222A
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SOT-23 EBC
Abstract: MMBT2222A PN2222A PZT2222A IC 7403 mark PD sot 23 PN222
Text: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted
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MMBT2222A
PN2222A
PZT2222A
OT-23
OT-223
500mA.
SOT-23 EBC
MMBT2222A
PN2222A
PZT2222A
IC 7403
mark PD sot 23
PN222
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2222A fairchild
Abstract: 22222a 2222a sot223 PN2222ABU SOT-23 EBC 2222A to-92 npn PN2222ANLbu
Text: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
500mA.
PN2222A
O-92-3
PN2222ABU
PN2222ANLBU
2222A fairchild
22222a
2222a sot223
SOT-23 EBC
2222A to-92 npn
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PN2222A
Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
Text: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
PN2222A
PN2222
MMPQ2222
MMBT2222A
NMT2222
PZT2222A
SOIC-16
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IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
IC 7403
MMPQ2222
PZT2222A
SOIC-16
MMBT2222A
NMT2222
PN2222A
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TF411
Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
NMT2222
S0113D
bSD113D
004Dbl7
TF411
national PN2222A
IC VS 1307
I-00
MMPQ2222
NMT2222
PN2222A
PZT2222A
TR46
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Untitled
Abstract: No abstract text available
Text: PZT2222 PZT2222A _ J v _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a m icrom iniatureSM D package SOT-223 , prim arily intended for linear and switching applications. PNP complements are PZT2907/2907A.
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PZT2222
PZT2222A
OT-223)
PZT2907/2907A.
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Untitled
Abstract: No abstract text available
Text: bb53T31 0 0 2 5 ^ 5 3TT « A P X N AUER PHILIPS/DISCRETE PZT2222 PZT2222A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a microminiatureSIVID envelope SOT-223 , primarily intended for linear and switching applications.
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bb53T31
PZT2222
PZT2222A
OT-223)
PZT2907/2907A.
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TF411
Abstract: t2222 PN2222A le TF-411
Text: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro cess 19. Absolute Maximum RâtinÇjS
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PN2222A
MMBT2222A
MMPQ2222
NMT2222
PZT2222A
PN2222A
MMBT2222A
OT-23
OT-223
TF411
t2222
PN2222A le
TF-411
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PZT2222
Abstract: PZT2222A
Text: 711002b OObTILil TÛ3 IPHIN PZT2222 PZT2222A SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a m ic ro m in ia tu re S M D envelope SO T-223 , p rim a rily intended fo r linear and sw itching applications. PNP com plem ents are P Z T 2 9 0 7 /2 9 0 7 A .
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711002b
PZT2222
PZT2222A
OT-223)
PZT2907/2907A.
OT-223
7Z82485
PZT2222A
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